Infineon Technologies IDV06S60CXKSA1

Overview

IDV06S60CXKSA1 from Infineon is a 2nd Generation thinQ!™ silicon carbide (SiC) Schottky diode in TO-220 FullPAK package, rated for 600 V DC blocking voltage, 6 A continuous forward current at T_C < 145°C, and 15 nC total capacitive charge. It delivers zero reverse recovery time, high surge capability (48 A, 10 ms), and thermal resistance R_thJC = 4.5 K/W - enabling high-efficiency CCM PFC stages in industrial power supplies.

For engineers reviewing the IDV06S60CXKSA1 datasheet, IDV06S60CXKSA1 pinout, IDV06S60CXKSA1 application, or IDV06S60CXKSA1 equivalent, key selection criteria include its SiC-based zero-Q_rr behavior, isolated TO-220 thermal performance matching non-isolated variants, 150°C max junction temperature, and suitability for high-frequency, high-reliability motor drives and solar inverters.

Technical Context

This SiC Schottky diode operates without minority carrier injection, eliminating reverse recovery charge (Q_rr) and associated switching losses. Its capacitive switching behavior is defined by Q_C = 15 nC at V_R = 400 V and di_F/dt = 200 A/µs, with t_c < 10 ns and no temperature-dependent trr.

The TO-220 FullPAK package integrates electrical isolation while maintaining R_thJC = 4.5 K/W via diffusion soldering - achieving thermal performance comparable to standard TO-220 - and supports mounting torque up to 50 N·cm on M2.5 screws.

Key Specifications

Pinout & Package

Package: PG-TO220 FullPAK - fully isolated thermally conductive package with integrated insulation, leadframe-mounted chip via diffusion soldering, and three-terminal configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D06060A and STPSC6H065DL, IDV06S60CXKSA1 uniquely combines full electrical isolation, near-identical thermal performance to non-isolated TO-220, and industry-standard 600 V rating - simplifying safety-compliant design in CCM PFC and UPS without added BOM cost.

Availability

IDV06S60CXKSA1 is available at Aetrix Electronics and suitable for CCM PFC rectifiers, solar inverter boost stages, and UPS output rectification requiring stable component supply, long-lifecycle assurance, and JEDEC-qualified reliability.

Supply support for IDV06S60CXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The 2nd Generation thinQ!™ SiC Schottky Diode product line targets high-efficiency, high-power-density power conversion systems - specifically engineered to replace silicon diodes in PFC, solar, UPS, and motor drive applications where thermal, EMI, and reliability constraints dominate.

FAQ

Is IDV06S60CXKSA1 pin-compatible with standard TO-220 silicon diodes?

No. While it uses the TO-220 FullPAK outline, Pin 3 is internally unconnected (n.a.), unlike standard TO-220 diodes where all three pins are functional. Mounting and PCB footprint match TO-220, but circuit layout must isolate Pin 3. The cathode (Pin 1) is tab-connected, requiring correct thermal pad grounding per Infineon's layout guidelines.

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies I_F = 6 A is rated at T_C < 145°C. Operation above this temperature requires linear derating per Figure 7 (P_tot vs. T_C). At T_C = 150°C, maximum continuous current drops to ~5.2 A; sustained operation beyond 145°C violates the qualified rating and risks accelerated parameter drift.

Does IDV06S60CXKSA1 require a gate resistor or snubber network?

No gate resistor is needed - it is a passive diode. However, a small RC snubber (e.g., 100 Ω + 100 pF) across anode-cathode is recommended in hard-switched >50 kHz applications to damp capacitive ringing from Q_C = 15 nC interacting with layout inductance, especially in high-di/dt motor drive freewheeling paths.

How does its thermal performance compare to non-isolated TO-220 SiC diodes?

Using diffusion soldering, IDV06S60CXKSA1 achieves R_thJC = 4.5 K/W - within 10% of non-isolated TO-220 SiC diodes (e.g., 3.5–4.0 K/W). This eliminates the typical 30–50% R_thJC penalty of isolated packages, allowing identical heatsink sizing while retaining reinforced insulation for safety-critical 600 V applications.