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Infineon Technologies SIDC11D60SIC3
- Part No.:
- SIDC11D60SIC3
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- Die
- Datasheet:
-
SIDC11D60SIC3.pdf
- Description:
- DIODE SIL CARB 600V 4A WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:2,474
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Product details
Overview
SIDC11D60SIC3 from Infineon Technologies is a silicon carbide Schottky diode rated for 600 V repetitive peak reverse voltage and 4 A continuous forward current, with zero reverse recovery charge and temperature-independent switching behavior. It serves as a high-efficiency freewheeling or PFC boost diode in high-frequency SMPS and industrial power converters.
For engineers reviewing the SIDC11D60SIC3 datasheet, SIDC11D60SIC3 pinout, SIDC11D60SIC3 application, or SIDC11D60SIC3 equivalent, key selection criteria include its 13 nC total capacitive charge at 150 °C, 1.7–1.9 V forward voltage at 4 A, 7 pF junction capacitance at 600 V, absence of reverse recovery, and suitability for high-temperature, high-dV/dt PFC stages.
Technical Context
This SiC Schottky diode operates without minority-carrier storage, eliminating reverse recovery losses and associated EMI. Its unipolar conduction mechanism ensures stable switching performance across –55 °C to +175 °C junction temperatures.
Designed for hard-switched topologies, it delivers 12.5 A single-pulse forward surge capability at 10 ms and withstands 40 A non-repetitive peak current at 10 µs, enabling robust operation in transient-limited AC/DC front-ends and snubber networks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VR(RRM) | 600 V - supports 400 VAC input rectification with 1.5× safety margin in universal-input PFC stages |
| IF(AV) | 4 A - continuous conduction mode (CCM) PFC output current rating at 100 °C case temperature |
| VF @ 4A, 25°C | 1.7–1.9 V - low conduction loss enabling >98% efficiency in 3.3 kW PFC designs |
| QC @ 150°C | 13 nC - minimal capacitive charge reduces turn-off losses in 100–300 kHz boost converters |
| CJ @ 600V | 7 pF - low junction capacitance minimizes capacitive switching loss and dV/dt-induced gate noise coupling |
| Tj Range | –55 to +175 °C - enables direct mounting on heatsinks in sealed industrial enclosures without derating |
Pinout & Package
Package: Bare die (unmounted chip), dimensions 1.15 × 0.97 mm², thickness 355 µm, anode pad 0.85 × 0.67 mm², photoimide passivation, Al anode / Ni-Ag cathode metallization.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (top metal) | Forward current entry point | Aluminum metallization optimized for epoxy or soft-solder die attach; requires electrically conductive bonding |
| Cathode (bottom metal) | Forward current exit / reverse blocking terminal | Ni-Ag stack provides low-resistance interface to copper substrate or DBC ceramic; enables thermal path through cathode side |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery | Eliminates switching tail current and associated losses, enabling clean hard-switching up to 300 kHz |
| Temperature-stable switching | Zero change in trr and QC from –55 °C to +175 °C - removes need for thermal derating in PFC control loops |
| Low CJ at high VR | 7 pF at 600 V - reduces capacitive displacement current during fast dV/dt transitions in bridge-leg configurations |
| High IFMAX | 40 A peak for 10 µs - sustains short-circuit events in active clamp or resonant LLC secondary rectification |
Applications
| Server PSU PFC Stage | Industrial Motor Drive Snubber |
|---|---|
Use Scenario: Boost PFC stage in 3.3 kW 1U server power supply operating at 200 kHz switching frequency. IC Role / Device Role / Timing Role: Unidirectional high-voltage freewheeling diode in continuous conduction mode (CCM) boost converter. Use Value: Zero reverse recovery eliminates turn-off spikes and reduces EMI filter size by 30% versus Si fast recovery diodes. | Use Scenario: RC snubber network across IGBT collector-emitter in 15 kW variable-frequency drive inverter leg. IC Role / Device Role / Timing Role: Clamp diode absorbing inductive energy during IGBT turn-off. Use Value: 13 nC QC limits snubber dissipation to <0.5 W at 10 kHz, enabling compact film capacitor selection. |
| Solar Inverter DC Link | EV Onboard Charger Boost |
Use Scenario: DC-link voltage clamping in string-level solar inverter with 1000 V bus and 25 kHz interleaved boost. IC Role / Device Role / Timing Role: Bidirectional voltage limiter protecting MOSFETs during grid fault transients. Use Value: 600 V VR(RRM) with 1.5× margin allows direct integration into 1000 V DC systems without series stacking. | Use Scenario: Active clamp forward converter in 6.6 kW EV onboard charger with 300–450 V DC input range. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in high-side clamp winding. Use Value: 1.7–1.9 V VF reduces conduction loss by 45% vs. Si Schottky, improving full-load efficiency from 94.2% to 95.1%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D04060E (Wolfspeed) | Same 600 V / 4 A rating; 1.85 V VF @ 4 A; 15 nC QC; TO-252-2L package | Bonded in surface-mount package - simplifies assembly but adds thermal resistance vs. bare die | Select when board-level reflow compatibility and mechanical robustness outweigh thermal optimization needs |
| SS14HE3_A/H (Vishay) | Si-based 40 V Schottky; 0.52 V VF; no SiC benefits; 4 A rating only at TC ≤ 75 °C | Limited to low-voltage DC/DC; cannot replace in 400 V PFC or snubber roles | Only viable in sub-60 V auxiliary supplies where SiC advantages are irrelevant |
Compared with C3D04060E, SIDC11D60SIC3 offers lower QC and superior thermal interface flexibility as bare die; versus SS14HE3_A/H, it enables high-voltage, high-frequency operation impossible with silicon technology.
Availability
SIDC11D60SIC3 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, solar inverters, and EV onboard chargers requiring stable component supply and high-temperature reliability.
Supply support for SIDC11D60SIC3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, automotive ICs, and security solutions, headquartered in Munich.
This device belongs to Infineon's early-generation SiC Schottky diode product line, developed to enable high-efficiency, high-frequency power conversion in industrial and renewable energy systems before discrete SiC MOSFETs matured.
FAQ
What is the recommended die attach method for SIDC11D60SIC3?
Infineon specifies electrically conductive adhesive or soft solder (e.g., SnAgCu) for anode-side attachment. Cathode-side mounting must use thermally conductive, electrically insulating material (e.g., AlN DBC) or direct copper bonding to manage heat flow while maintaining isolation. Wire bonding uses ≤250 µm aluminum wire.
Does SIDC11D60SIC3 require gate driving or external control signals?
No. As a passive unipolar Schottky diode, it operates without gate drive, biasing, or control logic. Its conduction is solely determined by forward voltage polarity and magnitude. No driver circuitry, bootstrap capacitors, or timing synchronization is needed.
Can SIDC11D60SIC3 be used in parallel configurations?
Yes, but only with matched die sorting and symmetric layout. The positive VF temperature coefficient (VF increases with Tj) enables natural current sharing. However, thermal coupling between dies must be tightly controlled-uneven heating causes current imbalance exceeding 20% at full load.
Is SIDC11D60SIC3 compliant with RoHS and REACH regulations?
Yes. Per Infineon's published compliance documentation, SIDC11D60SIC3 meets RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, including SVHC screening. Lead-free assembly is supported; Pb-free solder profiles are validated per J-STD-020.
SIDC11D60SIC3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 4A
- Voltage - Forward (Vf) (Max) @ If:
- 1.9 V @ 4 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 200 µA @ 600 V
- Capacitance @ Vr, F:
- 150pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
- Operating Temperature - Junction:
- -55°C ~ 175°C
SIDC11D60SIC3 FAQ
1.How can I place an order for SIDC11D60SIC3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDC11D60SIC3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDC11D60SIC3 reliable?
The price and inventory of SIDC11D60SIC3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC11D60SIC3 is usually 5 days.
3.What payment methods are accepted for SIDC11D60SIC3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC11D60SIC3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDC11D60SIC3?
SIDC11D60SIC3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDC11D60SIC3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDC11D60SIC3?
For technical support, including SIDC11D60SIC3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC11D60SIC3 requirements.
6.How does Aetrix verify that SIDC11D60SIC3 is sourced from the original manufacturer or authorized distributors?
All SIDC11D60SIC3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC11D60SIC3 meets industry standards.
7.What is the process for return or replacement of SIDC11D60SIC3?
All SIDC11D60SIC3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC11D60SIC3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDC11D60SIC3 part is unused and in its original packaging.
Return procedure for SIDC11D60SIC3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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