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Infineon Technologies IDD04S60CBUMA1

Part No.:
IDD04S60CBUMA1
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIDD04S60CBUMA1.pdf
Description:
DIODE SIC 600V 5.6A TO252-31
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,579

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Product details

Overview

IDD04S60CBUMA1 from Infineon Technologies is a 2nd-generation thinQ!™ silicon carbide (SiC) Schottky diode rated for 600 V DC blocking voltage, 4 A continuous forward current at TC < 130 °C, and 8 nC total capacitive charge. It operates with zero reverse recovery, no forward recovery, and stable switching behavior up to 175 °C junction temperature-optimized for CCM PFC stages in 400–800 W SMPS.

For engineers reviewing the IDD04S60CBUMA1 datasheet, IDD04S60CBUMA1 pinout, IDD04S60CBUMA1 application, or IDD04S60CBUMA1 equivalent, key selection criteria include its 50 V/ns dv/dt ruggedness, 3.6 K/W junction-to-case thermal resistance, absence of minority-carrier recovery, and PG-TO252-3 package compatibility with high-power SMD layouts.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes and SiC JBS devices in high-frequency, high-efficiency power conversion. Its unipolar conduction eliminates reverse recovery losses and enables operation at elevated temperatures without performance degradation.

The device features a 600 V repetitive peak reverse voltage, 32.6 A non-repetitive surge current (10 ms), and 200 A peak forward current (10 µs), with capacitance values of 130 pF at 1 VR, 20 pF at 300 VR, and 20 pF at 600 VR-all measured at 1 MHz.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM600 V - supports primary-side rectification and boost diode roles in 400–800 W CCM PFC designs
IF (cont.)4 A @ TC < 130 °C - defines maximum steady-state conduction capability under standard heatsink conditions
Qc8 nC - low capacitive charge reduces turn-off switching loss and EMI in hard-switched topologies
VF1.7–1.9 V @ IF = 4 A, Tj = 25 °C - forward voltage directly impacts conduction loss and thermal design margin
RthJC3.6 K/W - enables efficient heat transfer to PCB copper or external heatsink in TO252 footprint
dv/dt50 V/ns - ensures robustness against voltage transients in fast-switching SiC MOSFET-based half-bridges
IR0.5–50 µA @ VR = 600 V, Tj = 25–150 °C - low leakage preserves efficiency across full operating temperature range

Pinout & Package

Package: PG-TO252-3 (also designated TO252-3-1 / TO252-3-11), surface-mount, 3-terminal plastic package with exposed drain pad for thermal enhancement.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (left)No connection (n.c.)Electrically isolated terminal; must remain unconnected per design specification
Pin 2 (center)Anode (A)Forward current entry point; connects to switching node in boost PFC or inverter leg
Pin 3 (right)Cathode (C)High-current return path; tied to output rail or ground plane; also serves as thermal interface via exposed pad

Key Features

FeatureDesign Value
No reverse recovery (trr = 0)Eliminates switching loss and associated EMI in hard-switched converters; enables higher frequency operation
Temperature-stable switchingSwitching behavior independent of junction temperature-no derating needed for trr or Qc over –55 to +175 °C
High dv/dt ruggedness50 V/ns rating prevents false triggering or avalanche failure during fast voltage transitions in SiC half-bridges
Optimized for high-temp operationRated for continuous operation at Tj = 175 °C; enables compact thermal design in enclosed or high-ambient environments
JEDEC-qualified reliabilityQualified per JESD22-A108 and J-STD-020 for industrial and telecom power applications

Applications

CCM PFC Boost StageSolar String Inverter DC Link

Use Scenario: 600 V, 400–800 W continuous conduction mode (CCM) power factor correction stage in server PSUs and industrial AC/DC supplies.

IC Role / Device Role / Timing Role: Unidirectional high-frequency rectifier replacing silicon FRD; handles 100–300 kHz switching with zero reverse recovery.

Use Value: Reduces switching loss by >70% vs. Si FRD, enabling >98% PFC efficiency and eliminating snubber networks.

Use Scenario: DC link freewheeling and clamping diode in 1000 V-class solar string inverters with SiC MOSFET half-bridges.

IC Role / Device Role / Timing Role: Bidirectional voltage clamping and energy recirculation path during dead-time and fault events.

Use Value: Withstands 50 V/ns transients and 200 A surge peaks, ensuring reliable operation under partial shading and grid fault conditions.

UPS Output RectificationMotor Drive Brake Circuit

Use Scenario: Output-stage synchronous rectification in online double-conversion UPS systems delivering clean 230 VAC output.

IC Role / Device Role / Timing Role: High-reliability freewheeling diode in IGBT or SiC MOSFET H-bridge output stage.

Use Value: Maintains <50 µA leakage at 600 V and 150 °C, preventing thermal runaway during extended battery backup operation.

Use Scenario: Regenerative braking path in 3-phase BLDC or induction motor drives with 400–690 V DC bus.

IC Role / Device Role / Timing Role: Fast, low-loss path for back-EMF energy return to DC bus during deceleration.

Use Value: 32.6 A 10 ms surge rating supports repeated braking cycles without thermal stress or parameter drift.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
C3D04060E (Wolfspeed)Same 600 V / 4 A rating; 1.85 V VF typ. @ 4 A, 25 °C; RthJC = 3.5 K/W; TO252-2L (2-pin) packageLacks Pin 1 (n.c.); requires PCB layout revision; slightly higher VF increases conduction loss by ~3%Prefer when board space allows simplified 2-pin layout and lower thermal resistance is critical
STPSC4H065 (STMicroelectronics)650 V rating; 4 A IF; VF = 1.7 V typ.; Qc = 9.5 nC; RthJC = 4.0 K/W; same PG-TO252-3 footprintHigher voltage margin suits 650 V bus designs; 1.9 nC higher Qc increases turn-off loss in 300 kHz+ PFCChoose for 650 V systems or where higher VRRM margin is required over strict Qc minimization

Compared with C3D04060E and STPSC4H065, IDD04S60CBUMA1 offers the lowest Qc (8 nC) and true 3-pin PG-TO252-3 compatibility-including isolated Pin 1-making it optimal for legacy layout reuse and minimal EMI-sensitive PFC designs.

Availability

IDD04S60CBUMA1 is available at Aetrix Electronics and suitable for CCM PFC boost stages, solar string inverter DC links, and UPS output rectification requiring stable component supply, JEDEC-qualified reliability, and consistent SiC Schottky performance across production batches.

Supply support for IDD04S60CBUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

IDD04S60CBUMA1 belongs to Infineon's thinQ!™ 2nd-generation SiC Schottky diode product line, engineered specifically for high-frequency, high-efficiency power conversion in industrial, telecom, and renewable energy systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IDD04S60CBUMA1 is rated for continuous operation up to Tj = 175 °C, with thermal derating defined by the IF vs. TC curve. At TC = 100 °C, the device supports 6 A RMS forward current; at TC = 130 °C, it delivers 4 A DC. The 175 °C limit is validated per JEDEC JESD22-A108.

Does this diode require a gate driver or control signal?

No-IDD04S60CBUMA1 is an uncontrolled, passive two-terminal power diode. It conducts when forward-biased and blocks when reverse-biased, with no gate, control pin, or bias circuitry. Its operation depends solely on applied voltage polarity and magnitude, not external timing signals.

Can IDD04S60CBUMA1 replace a silicon fast recovery diode in an existing design?

Yes, but layout and thermal validation are required. While pin-compatible in PG-TO252-3, its lower VF and zero trr reduce conduction and switching losses-potentially lowering heatsink requirements. However, its higher dv/dt sensitivity demands careful PCB layout to avoid parasitic oscillation in high-di/dt nodes.

Is the "n.c." pin electrically isolated or internally connected?

Pin 1 is explicitly marked "n.c." (no connection) in the official Infineon datasheet Rev. 2.3 and confirmed in the package outline. It is electrically isolated from all internal die structures and must remain unconnected in PCB layout-no tie to ground, cathode, or any other net.

IDD04S60CBUMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolSiC™+
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
5.6A
Voltage - Forward (Vf) (Max) @ If:
1.9 V @ 4 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
50 µA @ 600 V
Capacitance @ Vr, F:
130pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3-11
Operating Temperature - Junction:
-55°C ~ 175°C

IDD04S60CBUMA1 FAQ

1.How can I place an order for IDD04S60CBUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDD04S60CBUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDD04S60CBUMA1 reliable?

The price and inventory of IDD04S60CBUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDD04S60CBUMA1 is usually 5 days.

3.What payment methods are accepted for IDD04S60CBUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDD04S60CBUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDD04S60CBUMA1?

IDD04S60CBUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDD04S60CBUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDD04S60CBUMA1?

For technical support, including IDD04S60CBUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDD04S60CBUMA1 requirements.

6.How does Aetrix verify that IDD04S60CBUMA1 is sourced from the original manufacturer or authorized distributors?

All IDD04S60CBUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDD04S60CBUMA1 meets industry standards.

7.What is the process for return or replacement of IDD04S60CBUMA1?

All IDD04S60CBUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDD04S60CBUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDD04S60CBUMA1 part is unused and in its original packaging.

Return procedure for IDD04S60CBUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDD04S60CBUMA1 Tags

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