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Infineon Technologies IDC73D120T6MX1SA2
- Part No.:
- IDC73D120T6MX1SA2
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- Die
- Datasheet:
-
IDC73D120T6MX1SA2.pdf
- Description:
- DIODE GP 1.2KV 150A WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:2,069
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Product details
Overview
IDC73D120T6MX1SA2 from Infineon Technologies is a 1200 V, 150 A rated silicon power diode die in EMCON 4 technology, designed as the freewheeling component in medium-power IGBT modules for industrial drives. It delivers soft, fast switching with low reverse recovery charge (Qr), low temperature coefficient of forward voltage, and operates up to 175 °C junction temperature. Used in 3–30 kW motor drive inverters with forced-air or liquid cooling.
For engineers reviewing the IDC73D120T6MX1SA2 datasheet, IDC73D120T6MX1SA2 pinout, IDC73D120T6MX1SA2 application, or IDC73D120T6MX1SA2 equivalent, key selection criteria include VR = 1200 V, IF(RMS) = 150 A, VF = 1.35–2.05 V at 150 A/25 °C, Qr and Erec performance across Tj = 25–150 °C, and die-level thermal resistance dependency on module mounting.
Technical Context
This bare die implements a planar, soft-recovery silicon PN junction optimized for parallel operation in press-pack or solder-bonded medium-power modules. Its EMCON 4 process ensures controlled carrier lifetime and low tail current, enabling reduced Erec and dv/dt-induced oscillations during turn-off in inductive loads.
Dynamic behavior-including peak reverse recovery current (IRM), Qr, and Erec-is characterized under standardized inductive test conditions (IF = 150 A, di/dt = 1000 A/µs, VR = 1200 V, VGE = −15 V) at Tj = 25 °C, 125 °C, and 150 °C. Thermal performance is fully dependent on module-level heat spreading and die attach quality.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VR(RRM) | 1200 V - maximum repetitive reverse blocking voltage; defines safe DC bus voltage rating in 600–800 VDC systems with margin |
| IF(RMS) | 150 A - continuous forward RMS current at Tj = 150 °C; sets minimum heatsink sizing for 30 kW drive output |
| VF @ 150 A, 25 °C | 1.35–2.05 V - forward voltage range determines conduction loss and thermal load in freewheeling path |
| Qr @ 150 A, 25 °C | tbd µC - reverse recovery charge directly impacts snubber design and switching loss in IGBT-diode pairs |
| Tvj,max | −40 to +175 °C - maximum junction temperature enables operation in high-ambient industrial enclosures without derating |
| Die size | 8.15 × 9.00 mm² - active area (59.89 mm²) supports current density ≤2.5 A/mm² at 150 A |
| Thickness | 110 µm - thin wafer enables low thermal resistance but requires controlled die attach pressure |
Pinout & Package
Package: Bare die (unmounted silicon chip), sawn on foil, 8.15 × 9.00 mm² outline, anode pad size 7.196 × 8.046 mm², photoimide passivation, AlSiCu front metallization, Ni/Ag back metallization.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (A) | Forward current entry / reverse voltage blocking terminal | Large-area AlSiCu pad (7.196 × 8.046 mm²) optimized for low-resistance solder or conductive epoxy bonding |
| Cathode (K) | Forward current exit / reverse voltage reference terminal | Backside Ni/Ag metallization compatible with both soft-solder and epoxy die attach; electrically conductive only |
Key Features
| Feature | Design Value |
|---|---|
| EMCON 4 technology | Carrier lifetime-controlled silicon process delivering soft reverse recovery and low Qr for reduced EMI in motor drives |
| Soft, fast switching | Controlled tail current decay minimizes voltage overshoot and reduces snubber component stress in IGBT half-bridges |
| Low reverse recovery charge (Qr) | Enables higher switching frequencies without excessive diode losses or thermal runaway in paralleled configurations |
| Small temperature coefficient of VF | Ensures stable current sharing among paralleled dies across −40 to +175 °C operating range |
| ESD-sensitive handling | Classified per MIL-STD-883; requires grounded workstations and ionized air during module assembly |
Applications
| Pump Inverter Module | Conveyor Drive Inverter |
|---|---|
Use Scenario: 7.5–15 kW variable-speed pump control in HVAC and water treatment systems using 2-level IGBT modules. IC Role / Device Role / Timing Role: Freewheeling diode in IGBT half-bridge leg; clamps inductive energy during IGBT turn-off. Use Value: Low Qr and soft recovery reduce Erec by ≥15% vs. standard PT diodes, lowering total system losses at 4–8 kHz switching. | Use Scenario: 5–22 kW conveyor belt drives in packaging and material handling equipment with forced-air cooling. IC Role / Device Role / Timing Role: Anti-parallel diode providing commutation path for motor regenerative current. Use Value: Stable VF temperature coefficient enables reliable current sharing across 2–4 paralleled dies without external balancing resistors. |
| Fan Inverter Module | Compressor Drive Inverter |
Use Scenario: 3–10 kW centrifugal fan inverters in data center cooling and cleanroom ventilation systems. IC Role / Device Role / Timing Role: Reverse-conducting path during PWM dead-time; handles reactive current from PMSM motors. Use Value: 175 °C max junction temperature allows compact heatsink design and eliminates derating in ambient >60 °C enclosures. | Use Scenario: 10–30 kW hermetic compressor drives in refrigeration units with liquid-cooled baseplates. IC Role / Device Role / Timing Role: Energy recirculation diode during motor deceleration; withstands repeated 1200 V transients. Use Value: 1200 V VR rating provides 2× DC-link margin for 600 V nominal systems, improving long-term reliability under voltage surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar freewheeling diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDC73D120T6M | Original bare die, 8.15 × 9.00 mm², AlSiCu/NiAg metallization, EMCON 4 process | Designed for solder- or epoxy-bonded medium-power modules with direct baseplate cooling | Select when module layout matches exact die footprint and thermal interface requirements |
| FF150R12KE4 | Pre-packaged 1200 V/150 A dual diode in EasyPACK 2B housing; includes integrated thermal interface and isolation | Suitable for PCB-mountable designs requiring UL-certified isolation and simplified assembly | Choose for rapid prototyping or low-volume production where bare-die handling and module assembly are not feasible |
Compared with FF150R12KE4, IDC73D120T6MX1SA2 offers lower thermal resistance and higher customization flexibility in module integration but requires qualified die-attach processes and full thermal/mechanical qualification. The bare die enables higher power density in space-constrained industrial inverters.
Availability
IDC73D120T6MX1SA2 is available at Aetrix Electronics and suitable for medium-power motor drives, HVAC inverters, and industrial conveyor systems requiring stable component supply and long-term module lifecycle support.
Supply support for IDC73D120T6MX1SA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
IDC73D120T6MX1SA2 belongs to Infineon's EMCON 4 bare die portfolio, engineered specifically for high-efficiency, medium-power IGBT modules targeting industrial motor drives with demanding thermal and reliability requirements.
FAQ
What is the recommended die attach method for IDC73D120T6MX1SA2?
Infineon specifies electrically conductive epoxy or soft solder (e.g., SnAgCu) for anode-side attachment and Ni/Ag-compatible solder for cathode-side bonding. Die attach must ensure uniform pressure distribution across the 7.196 × 8.046 mm² anode pad to prevent cracking. Voiding must be <5% per IPC-7095 standards.
Does IDC73D120T6MX1SA2 require gate driving or control signals?
No. IDC73D120T6MX1SA2 is a passive two-terminal power diode die with no gate or control terminals. Its conduction is fully determined by external circuit polarity and voltage. It functions autonomously as a freewheeling or anti-parallel device in IGBT-based topologies.
Can IDC73D120T6MX1SA2 be paralleled with other diodes in the same module?
Yes-its small VF temperature coefficient and matched dynamic parameters enable stable current sharing across up to four paralleled dies when mounted identically on a common baseplate with symmetric interconnects and uniform thermal paths.
Where can I find thermal resistance (RthJC) data for this bare die?
RthJC is not specified for bare dies because it depends entirely on module construction-die attach material, baseplate material, clamping force, and interface flatness. Infineon provides thermal simulation models and application notes (e.g., AN2018-05) for estimating RthJC in typical press-pack or solder-bonded layouts.
IDC73D120T6MX1SA2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 150A
- Voltage - Forward (Vf) (Max) @ If:
- 2.05 V @ 150 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 26 µA @ 1200 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
- Operating Temperature - Junction:
- -40°C ~ 175°C
IDC73D120T6MX1SA2 FAQ
1.How can I place an order for IDC73D120T6MX1SA2 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDC73D120T6MX1SA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDC73D120T6MX1SA2 reliable?
The price and inventory of IDC73D120T6MX1SA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDC73D120T6MX1SA2 is usually 5 days.
3.What payment methods are accepted for IDC73D120T6MX1SA2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDC73D120T6MX1SA2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDC73D120T6MX1SA2?
IDC73D120T6MX1SA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDC73D120T6MX1SA2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDC73D120T6MX1SA2?
For technical support, including IDC73D120T6MX1SA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDC73D120T6MX1SA2 requirements.
6.How does Aetrix verify that IDC73D120T6MX1SA2 is sourced from the original manufacturer or authorized distributors?
All IDC73D120T6MX1SA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDC73D120T6MX1SA2 meets industry standards.
7.What is the process for return or replacement of IDC73D120T6MX1SA2?
All IDC73D120T6MX1SA2 units undergo pre-shipment inspection (PSI). If there is an issue with IDC73D120T6MX1SA2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDC73D120T6MX1SA2 part is unused and in its original packaging.
Return procedure for IDC73D120T6MX1SA2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDC73D120T6MX1SA2 Tags
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BAV21W-7-F
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