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Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GP3D008A065ADIODE SIL CARB 650V 8A TO220-2 SemiQ |
7,088 | 0.00 |
|
Datasheet |
Amp+™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.6 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 336pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
|
GP3D010A065ADIODE SIL CARB 650V 10A TO220-2 SemiQ |
8,334 | 0.00 |
|
Datasheet |
Amp+™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 419pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GP3D010A065BDIODE SIL CARB 650V 10A TO247-2 SemiQ |
7,555 | 0.00 |
|
Datasheet |
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 419pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
|
GP3D012A065ADIODE SIL CARB 650V 12A TO220-2 SemiQ |
6,993 | 0.00 |
|
Datasheet |
Amp+™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 572pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GP3D008A065DDIODE SIC 650V 8A TO263-2L SemiQ |
3,278 | 0.00 |
|
Datasheet |
- | - | Tape & Reel (TR) | Active | - | 650 V | 8A | - | - | - | - | - | - | - | - | - | - |
|
GP3D010A065CDIODE SILICON CARBIDE SemiQ |
8,544 | 0.00 |
|
- |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
GP3D010A065DDIODE SIC 650V 8A TO263-2L SemiQ |
5,502 | 0.00 |
|
Datasheet |
- | - | Tape & Reel (TR) | Active | - | 650 V | 10A | - | - | - | - | - | - | - | - | - | - |
|
|
GP3D012A065BDIODE SIL CARB 650V 12A TO247-2 SemiQ |
2 | 0.00 |
|
Datasheet |
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 572pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
|
GP3D020A065ADIODE SIL CARB 650V 20A TO220-2 SemiQ |
8,484 | 0.00 |
|
Datasheet |
Amp+™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.65 V @ 30 A | No Recovery Time > 500mA (Io) | - | 75 µA @ 650 V | 1247pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
|
GP3D010A120BDIODE SIL CARB 1.2KV 10A TO247-2 SemiQ |
4,098 | 0.00 |
|
Datasheet |
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.65 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 608pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
