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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
HERAF803G 50NS, 8A, 200V, HIGH EFFICIENT R Taiwan Semiconductor Corporation	5,364	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	200 V	8A	1 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 200 V	80pF @ 4V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 150°C
HERAF801GH 50NS, 8A, 50V, HIGH EFFICIENT RE Taiwan Semiconductor Corporation	5,329	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	50 V	8A	1 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 50 V	80pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	ITO-220AC	-55°C ~ 150°C
HERAF801G 50NS, 8A, 50V, HIGH EFFICIENT RE Taiwan Semiconductor Corporation	8,554	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	50 V	8A	1 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 50 V	80pF @ 4V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 150°C
HERAF1003GH 50NS, 10A, 200V, HIGH EFFICIENT Taiwan Semiconductor Corporation	8,784	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	200 V	10A	1 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 200 V	80pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	ITO-220AC	-55°C ~ 150°C
HERAF802G 50NS, 8A, 100V, HIGH EFFICIENT R Taiwan Semiconductor Corporation	8,259	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	100 V	8A	1 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 100 V	80pF @ 4V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 150°C
HERAF802GH 50NS, 8A, 100V, HIGH EFFICIENT R Taiwan Semiconductor Corporation	4,945	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	100 V	8A	1 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 100 V	80pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	ITO-220AC	-55°C ~ 150°C
HERAF1003G 50NS, 10A, 200V, HIGH EFFICIENT Taiwan Semiconductor Corporation	5,946	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	200 V	10A	1 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 200 V	80pF @ 4V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 150°C
HERAF1001GH 50NS, 10A, 50V, HIGH EFFICIENT R Taiwan Semiconductor Corporation	4,897	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	50 V	10A	1 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 50 V	80pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	ITO-220AC	-55°C ~ 150°C
HERAF1001G 50NS, 10A, 50V, HIGH EFFICIENT R Taiwan Semiconductor Corporation	4,646	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	50 V	10A	1 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 50 V	80pF @ 4V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 150°C
HERAF1002GH 50NS, 10A, 100V, HIGH EFFICIENT Taiwan Semiconductor Corporation	6,542	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	100 V	10A	1 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 100 V	80pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	ITO-220AC	-55°C ~ 150°C

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