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Taiwan Semiconductor Corporation HERAF802G

Part No.:
HERAF802G
Manufacturer:
Taiwan Semiconductor Corporation
Category:
Single Diodes
Package:
TO-220-2 Full Pack
Datasheet:
AetrixHERAF802G.pdf
Description:
50NS, 8A, 100V, HIGH EFFICIENT R
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,259

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Product details

Overview

HERAF802G from Taiwan Semiconductor is an AEC-Q101-qualified, glass-passivated, single-die high-efficiency rectifier diode rated for 8A average forward current, 100V repetitive peak reverse voltage (VRRM), and 150A non-repetitive surge current (IFSM). It operates up to 150°C junction temperature and is used in automotive-grade DC-DC converters and switching-mode power supplies.

For engineers reviewing the HERAF802G datasheet, HERAF802G pinout, HERAF802G application, or HERAF802G equivalent, key selection criteria include its 100V VRRM rating, 1.0V typical forward voltage at 8A/25°C, 50ns reverse recovery time, ITO-220AC package thermal resistance of 2°C/W, and UL recognition (E-326243).

Technical Context

The HERAF802G is a fast-recovery, single-junction silicon rectifier optimized for high-frequency switching applications. Its 50ns trr and low 1.0V VF at 8A reduce conduction and switching losses in synchronous and freewheeling topologies.

Designed with glass passivation and matte tin-plated leads compliant with J-STD-002, it meets AEC-Q101 stress requirements for automotive under-hood use. Thermal performance is defined by RθJC = 2°C/W and TJ max = 150°C, enabling reliable operation in thermally constrained power stages.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM100 V - Maximum blocking voltage before avalanche; defines usable input range in 12–48V automotive DC-DC designs
IF(AV)8 A - Continuous forward current capability at TC = 100°C; supports compact heatsink sizing
VF @ 8A, 25°C1.0 V typical - Low conduction loss improves efficiency in high-duty-cycle rectification
trr50 ns - Fast recovery minimizes switching loss and EMI in 100–500 kHz SMPS
RθJC2 °C/W - Enables direct mounting to heatsink; allows >6W dissipation with <12°C rise at 8A
IFSM150 A - Withstands inrush and fault currents in automotive load dump scenarios
IR @ 100V, 25°C≤10 µA - Low leakage preserves efficiency in standby and light-load conditions

Pinout & Package

Package: ITO-220AC - Insulated TO-220 variant with electrically isolated tab, UL 94V-0 molding compound, and matte tin-plated leads rated for J-STD-002 solderability. Mounting torque ≤0.56 N·m.

Pin/TerminalCircuit RoleDesign Meaning
Anode (Lead 1)Forward current entry pointConnected to input/high-side node; must be routed with low-inductance path for fast-switching stability
Cathode (Lead 2)Forward current exit pointConnected to output/low-side node; serves as primary heat transfer path to heatsink via tab
Tab (Isolated)Thermal interface / Electrical isolationElectrically isolated metal tab enables direct heatsink mounting without insulator; critical for thermal reliability

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive under-hood environments including temperature cycling, HTRB, and mechanical shock per AEC standard
Glass passivated junctionEnhances moisture resistance and long-term reliability in humid or condensing conditions
UL Recognized (E-326243)Meets safety requirements for end-equipment certification in industrial and automotive power systems
Halogen-free (IEC 61249-2-21)Complies with RoHS and environmental regulations for green manufacturing and recycling
Junction-to-case RθJC = 2°C/WEnables predictable thermal design with minimal derating up to 8A continuous in ambient ≤70°C

Applications

Automotive DC-DC ConvertersIndustrial Switching Inverters

Use Scenario: Step-down conversion from 48V battery to 12V auxiliary rail in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Primary output rectifier in synchronous buck topology operating at 200 kHz.

Use Value: 1.0V VF and 50ns trr reduce total power loss by ~18% vs. standard FRD alternatives at 8A load.

Use Scenario: Output stage in 3kW industrial UPS inverter feeding motor drives.

IC Role / Device Role / Timing Role: Freewheeling diode across IGBTs in H-bridge output stage.

Use Value: 150A IFSM withstands motor stall surges; 150°C TJ rating ensures stable operation without forced air cooling.

Telecom Power SuppliesRenewable Energy Charge Controllers

Use Scenario: Secondary-side rectification in 48V telecom rectifier modules with 92% efficiency target.

IC Role / Device Role / Timing Role: High-current output rectifier in phase-shifted full-bridge converter.

Use Value: Low RθJC = 2°C/W allows conduction loss management within 1U chassis thermal envelope.

Use Scenario: Solar charge controller converting PV array output (up to 100V) to 24V battery bank.

IC Role / Device Role / Timing Role: Blocking diode preventing reverse discharge during night-time low-light conditions.

Use Value: 10µA IR at 100V minimizes standby leakage loss over multi-day no-sun periods.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency rectifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STTH8L06D (STMicroelectronics)600V VRRM, 1.7V VF @ 8A, 60ns trr, TO-220AC packageHigher voltage rating but higher VF; less efficient at 100V-class designsSelect when system requires >100V blocking margin and can tolerate +0.7V conduction penalty
VS-8EWH06FN-M3 (Vishay)600V VRRM, 1.15V VF @ 8A, 45ns trr, TO-220AC packageSimilar VF/trr but not AEC-Q101 qualified; lacks UL recognitionPrefer for cost-sensitive industrial applications where automotive qualification is unnecessary

Compared with STTH8L06D and VS-8EWH06FN-M3, the HERAF802G delivers optimal balance of low VF (1.0V), fast trr (50ns), AEC-Q101 compliance, and UL recognition-making it the preferred choice for thermally constrained, safety-certified 100V automotive and industrial rectification.

Availability

HERAF802G is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial switching inverters, and telecom power supplies requiring stable component supply, AEC-Q101 qualification, and UL safety recognition.

Supply support for HERAF802G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power devices, rectifiers, TVS diodes, and MOSFETs for industrial and automotive markets.

The HERAF802G belongs to TSC's AEC-Q101-qualified high-efficiency rectifier family, engineered specifically for high-reliability, high-frequency power conversion in automotive and industrial environments where thermal robustness and safety certification are mandatory.

FAQ

What is the maximum junction temperature rating for HERAF802G?

The HERAF802G has a maximum junction temperature (TJ max) of +150°C, validated per AEC-Q101 thermal stress testing. This rating allows sustained operation in under-hood automotive environments and high-ambient industrial enclosures when mounted on a heatsink with appropriate thermal interface. Derating begins above TC = 100°C per the forward current derating curve in the datasheet.

Is HERAF802G pin-compatible with other parts in the HERAF80xG series?

Yes, all HERAF801G through HERAF808G share identical ITO-220AC packaging, pinout, and thermal footprint. The only differences are VRRM ratings (50V to 1000V) and corresponding VF/trr values. HERAF802G uses the same Anode–Cathode–Isolated Tab configuration and mounting torque specification (≤0.56 N·m) as the full family.

Does HERAF802G meet automotive qualification standards?

Yes, the HERAF802G is AEC-Q101 qualified when ordered with the "H" suffix (HERAF802GH). Standard HERAF802G is not AEC-Q101 certified; only the "H" variant undergoes full stress testing per AEC-Q101. Both variants share identical electrical and thermal specs, but automotive programs must specify HERAF802GH.

What is the reverse recovery time (trr) of HERAF802G and how is it measured?

The HERAF802G has a typical reverse recovery time (trr) of 50 ns, measured under IF = 0.5A, IR = 1.0A, and Irr = 0.25A per JEDEC test conditions. This value reflects fast minority-carrier recombination enabled by optimized doping and passivation, making HERAF802G suitable for switching frequencies up to 500 kHz without excessive switching loss.

Can HERAF802G be used as a freewheeling diode in IGBT-based inverters?

Yes, HERAF802G is commonly deployed as a freewheeling diode across IGBTs in motor drive inverters. Its 150A IFSM rating handles transient surge currents during motor stall or short-circuit events, while its 50ns trr and 1.0V VF minimize commutation losses and improve overall inverter efficiency at 8A continuous current levels.

HERAF802G Specifications

Product attributes
Attribute value
Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
TO-220-2 Full Pack
Packaging:
Tube
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
100 V
Current - Average Rectified (Io):
8A
Voltage - Forward (Vf) (Max) @ If:
1 V @ 8 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
50 ns
Current - Reverse Leakage @ Vr:
10 µA @ 100 V
Capacitance @ Vr, F:
80pF @ 4V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
ITO-220AC
Operating Temperature - Junction:
-55°C ~ 150°C

HERAF802G FAQ

1.How can I place an order for HERAF802G through Aetrix?

Please submit a Request for Quotation (RFQ) for HERAF802G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HERAF802G reliable?

The price and inventory of HERAF802G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HERAF802G is usually 5 days.

3.What payment methods are accepted for HERAF802G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HERAF802G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HERAF802G?

HERAF802G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HERAF802G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HERAF802G?

For technical support, including HERAF802G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HERAF802G requirements.

6.How does Aetrix verify that HERAF802G is sourced from the original manufacturer or authorized distributors?

All HERAF802G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HERAF802G meets industry standards.

7.What is the process for return or replacement of HERAF802G?

All HERAF802G units undergo pre-shipment inspection (PSI). If there is an issue with HERAF802G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HERAF802G part is unused and in its original packaging.

Return procedure for HERAF802G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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