Taiwan Semiconductor Corporation HERAF1002GH
- Part No.:
- HERAF1002GH
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Single Diodes
- Package:
- TO-220-2 Full Pack
- Datasheet:
-
HERAF1002GH.pdf
- Description:
- 50NS, 10A, 100V, HIGH EFFICIENT
- Quantity:
- Payment:

- Shipping:

Inventory:6,542
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HERAF1002GH from Taiwan Semiconductor is a 10A, 100V AEC-Q101-qualified high-efficiency fast recovery rectifier in ITO-220AC package, featuring 1.0V max forward voltage at 10A/25°C, 50ns reverse recovery time, and 150A surge capability - used in automotive DC-DC converters and switching inverters.
For engineers reviewing the HERAF1002GH datasheet, HERAF1002GH pinout, HERAF1002GH application, or HERAF1002GH equivalent, key selection criteria include VRRM = 100 V, IF = 10 A, trr = 50 ns, RθJC = 2 °C/W, and AEC-Q101 qualification for under-hood power conversion designs.
Technical Context
This single-die fast recovery rectifier uses glass-passivated junction technology to achieve low conduction loss and stable high-temperature operation up to 150°C junction temperature. Its 50 ns reverse recovery time and 1.0 V forward voltage support high-frequency switching in automotive-grade SMPS.
The ITO-220AC package provides low thermal resistance (2 °C/W) and matte tin-plated leads compliant with J-STD-002 solderability. UL Recognition #E-326243 and halogen-free construction per IEC 61249-2-21 meet stringent automotive reliability requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 100 V - Maximum repetitive reverse blocking voltage; defines safe operating range in 12–48 V automotive bus-derived converters |
| IF | 10 A continuous - Rated average forward current at case temperature ≤ 100°C; supports compact heatsink designs |
| trr | 50 ns - Measured at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A; enables ≥200 kHz switching without excessive switching loss |
| VF | 1.0 V max @ 10 A, 25°C - Low conduction loss improves efficiency in high-current output stages |
| RθJC | 2 °C/W - Junction-to-case thermal resistance; allows direct mounting to chassis or heatsink for thermal management |
| IFSM | 150 A @ 8.3 ms half-sine - Withstands inrush and fault currents in automotive load dump scenarios |
Pinout & Package
ITO-220AC package: 3-terminal through-hole outline with isolated tab (cathode), anode lead, and cathode lead - tab electrically connected to cathode, requires insulated mounting when referenced to non-cathode potential.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (large metal surface) | Cathode | Primary heat path and high-current return node; must be electrically isolated unless system ground is cathode-referenced |
| Lead 1 (left, viewed front) | Anode | Input terminal for forward conduction; routed to input rail or switch node in freewheeling topology |
| Lead 2 (right, viewed front) | Cathode | Output terminal; connects to output capacitor or inductor node in buck/boost/flyback configurations |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive under-hood use including temperature cycling, mechanical shock, and humidity testing per stress test standard |
| Glass passivated junction | Prevents moisture ingress and metallization corrosion, enabling >15-year field life in humid environments |
| Low VF (1.0 V max) | Reduces conduction loss by ~15% vs. standard FRDs at 10 A, improving thermal margin in sealed enclosures |
| Fast trr (50 ns) | Minimizes reverse recovery charge (Qrr) and associated EMI in high-frequency converters |
| UL Recognized #E-326243 | Confirms flammability (UL 94V-0), electrical insulation, and long-term reliability for safety-critical systems |
Applications
| Automotive DC-DC Converters | On-Board Charger (OBC) Auxiliary Supplies |
|---|---|
Use Scenario: 12 V/48 V bidirectional DC-DC converter in 48 V mild hybrid systems. IC Role / Device Role / Timing Role: Output rectifier in synchronous or asynchronous buck-boost stage handling 10 A continuous output. Use Value: 1.0 V VF and 50 ns trr reduce power loss and EMI, supporting >95% efficiency at full load. | Use Scenario: Isolated auxiliary supply powering gate drivers and MCU in EV on-board chargers. IC Role / Device Role / Timing Role: Secondary-side fast recovery rectifier in flyback or forward converter delivering 12 V @ 5–10 A. Use Value: AEC-Q101 qualification ensures reliability across -40°C to +125°C ambient, matching OBC thermal profile. |
| Industrial Switching Inverters | Freewheeling Diode in Motor Drives |
Use Scenario: High-efficiency 1 kW industrial inverter for HVAC compressors. IC Role / Device Role / Timing Role: Freewheeling diode across IGBTs in 3-phase bridge, conducting during dead-time and inductive kickback. Use Value: 150 A IFSM withstands motor stall currents; 2 °C/W RθJC enables direct heatsink mounting without thermal interface pads. | Use Scenario: Brushless DC motor drive in commercial pumps and fans. IC Role / Device Role / Timing Role: Clamp diode across MOSFETs in half-bridge legs, providing low-loss current recirculation path. Use Value: Glass passivation and halogen-free construction meet IPC-J-STD-020 moisture sensitivity and RoHS compliance for industrial assembly lines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast recovery rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH10R06DJF | VRRM = 600 V, trr = 35 ns, VF = 1.7 V @ 10 A - higher voltage rating but higher forward drop | Designed for 400 V bus systems (e.g., PFC front-end); less optimal for 100 V-class automotive outputs | Select if higher VRRM margin or faster trr is prioritized over conduction loss |
| ON-SEMI MUR1020CT | Dual common-cathode configuration, VRRM = 200 V, trr = 60 ns, VF = 0.95 V - lower VF but no AEC-Q101 qualification | Targeted at industrial/commercial power supplies; lacks automotive reliability validation | Acceptable for non-automotive 100–200 V applications where qualification is not required |
Compared with STTH10R06DJF and MUR1020CT, HERAF1002GH uniquely balances 100 V rating, 1.0 V VF, 50 ns trr, and AEC-Q101 qualification - making it the only option optimized for cost-sensitive, thermally constrained 12–48 V automotive DC-DC outputs requiring zero qualification waivers.
Availability
HERAF1002GH is available at Aetrix Electronics and suitable for automotive DC-DC converters, on-board charger auxiliary supplies, and industrial switching inverters requiring stable component supply with AEC-Q101 assurance and traceable sourcing.
Supply support for HERAF1002GH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power discrete manufacturer headquartered in Hsinchu, Taiwan, serving automotive, industrial, and consumer markets since 1979.
The HERAF series targets high-reliability power conversion in automotive under-hood applications, emphasizing AEC-Q101 qualification, thermal robustness, and fast recovery performance for next-generation 12 V/48 V architectures.
FAQ
Is HERAF1002GH AEC-Q101 qualified?
Yes, HERAF1002GH is AEC-Q101 qualified - confirmed by the "H" suffix in the ordering code and explicitly stated in Taiwan Semiconductor's datasheet revision I2105. This qualification covers temperature cycling, high-temperature operating life, and mechanical shock testing required for automotive under-hood deployment. HERAF1002GH meets all stress tests defined in AEC-Q101 Rev D without derating.
What is the maximum junction temperature for HERAF1002GH?
The maximum rated junction temperature for HERAF1002GH is +150°C, consistent across the HERAF1001G–HERAF1008G family. This rating is validated under steady-state and transient thermal conditions per JEDEC standards, and the device maintains specified electrical parameters up to this limit when case temperature is controlled via the ITO-220AC package's 2 °C/W thermal path.
Does HERAF1002GH have a built-in thermal protection feature?
No, HERAF1002GH is a passive rectifier diode and does not include integrated thermal protection circuitry. Thermal management relies entirely on external design - including heatsinking, airflow, and PCB copper area - to maintain junction temperature within the -55°C to +150°C operating range. The 2 °C/W RθJC value enables predictable thermal modeling for layout-driven reliability.
Can HERAF1002GH replace HERAF1001GH in a design?
HERAF1002GH (100 V VRRM) is not a direct replacement for HERAF1001GH (50 V VRRM) without circuit review. While both share identical package, pinout, and thermal specs, the higher reverse voltage rating of HERAF1002GH introduces slightly higher junction capacitance (80 pF vs. ~70 pF typical for 50 V variants) and may affect EMI in ultra-high-frequency designs. System-level validation is required before substitution.
What is the marking code on the HERAF1002GH device body?
The marking code on the HERAF1002GH device body is "HERAF1002G", followed by date code (e.g., "2325" for week 25 of 2023) and factory code "F". The "H" suffix appears only in the ordering code (HERAF1002GH) and is not laser-marked on the package - qualification status is verified via lot traceability and certificate of compliance, not physical marking.
HERAF1002GH Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- TO-220-2 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io):
- 10A
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 10 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 50 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 100 V
- Capacitance @ Vr, F:
- 80pF @ 4V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- ITO-220AC
- Operating Temperature - Junction:
- -55°C ~ 150°C
HERAF1002GH FAQ
1.How can I place an order for HERAF1002GH through Aetrix?
Please submit a Request for Quotation (RFQ) for HERAF1002GH on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HERAF1002GH reliable?
The price and inventory of HERAF1002GH are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HERAF1002GH is usually 5 days.
3.What payment methods are accepted for HERAF1002GH?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HERAF1002GH transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HERAF1002GH?
HERAF1002GH orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HERAF1002GH order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HERAF1002GH?
For technical support, including HERAF1002GH datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HERAF1002GH requirements.
6.How does Aetrix verify that HERAF1002GH is sourced from the original manufacturer or authorized distributors?
All HERAF1002GH products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HERAF1002GH meets industry standards.
7.What is the process for return or replacement of HERAF1002GH?
All HERAF1002GH units undergo pre-shipment inspection (PSI). If there is an issue with HERAF1002GH, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HERAF1002GH part is unused and in its original packaging.
Return procedure for HERAF1002GH:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HERAF1002GH Tags

-
1N4448X-TP
Micro Commercial Co

-
1N4148WX-TP
Micro Commercial Co

-
1N4148TR
onsemi

-
MMSD4148T1G
onsemi

-
MMBD914LT3G
onsemi

-
BAS16HT1G
onsemi

-
1N914BWT
onsemi

-
BAS21LT1G
onsemi

-
LL4148
onsemi

-
BAS16LT1G
onsemi

-
MMSD914T1G
onsemi

-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
