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Taiwan Semiconductor Corporation HERAF1003G
- Part No.:
- HERAF1003G
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Single Diodes
- Package:
- TO-220-2 Full Pack
- Datasheet:
-
HERAF1003G.pdf
- Description:
- 50NS, 10A, 200V, HIGH EFFICIENT
- Quantity:
- Payment:
- Shipping:
Inventory:5,946
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Product details
Overview
HERAF1003G from Taiwan Semiconductor is a 10A, 200V glass-passivated high-efficiency fast recovery rectifier in ITO-220AC package, featuring 1.0V max forward voltage at 10A/25°C, 50ns reverse recovery time, and 2°C/W junction-to-case thermal resistance - used in DC-DC converters and freewheeling paths in automotive-grade switching inverters.
For engineers reviewing the HERAF1003G datasheet, HERAF1003G pinout, HERAF1003G application, or HERAF1003G equivalent, key selection factors include its AEC-Q101 qualification option (HERAF1003GH), 150A surge rating, 150°C max junction temperature, and ITO-220AC mechanical compatibility with heatsink mounting.
Technical Context
This single-die fast recovery rectifier uses glass passivation for stable junction protection and achieves low conduction loss via optimized PN junction design. Its 50ns trr and 1.0V VF support high-frequency switching up to several hundred kHz in hard-switched topologies.
The device operates across –55°C to +150°C junction range with 2°C/W RθJC enabling direct heatsink mounting without thermal interface material in moderate-power applications. UL Recognized (E-326243) and RoHS/halogen-free compliance confirm suitability for automotive and industrial end equipment.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 200 V - maximum repetitive reverse blocking voltage; defines usable input voltage headroom in boost/flyback designs |
| IF | 10 A - continuous average forward current at TC = 100°C; sets baseline conduction capability |
| IFSM | 150 A - non-repetitive surge current (8.3ms half-sine); supports inrush and fault-current handling |
| VF @ 10A, 25°C | ≤1.0 V - forward voltage drop; directly determines conduction loss and thermal load at rated current |
| trr | ≤50 ns - reverse recovery time; limits switching losses and EMI in high-frequency SMPS |
| RθJC | 2 °C/W - junction-to-case thermal resistance; enables thermal design with standard ITO-220AC heatsinking |
| TJ max | +150 °C - maximum allowable junction temperature; allows operation in under-hood automotive environments |
Pinout & Package
Package: ITO-220AC - insulated thermally enhanced outline with single anode/cathode terminals, matte tin-plated leads, UL 94V-0 molding compound, and 0.56 N·m max mounting torque.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Tab) | Forward current entry point | Electrically connected to metal tab; requires isolation from heatsink unless cathode-referenced layout |
| Cathode (Lead) | Forward current exit / reverse blocking terminal | Standard lead; solderable per J-STD-002; polarity marked on device body |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures long-term reliability and moisture resistance without hermetic sealing |
| AEC-Q101 qualified version available | HERAF1003GH meets stress test requirements for automotive power electronics |
| UL Recognized (E-326243) | Validates safety compliance for end-equipment certification in North America |
| Halogen-free per IEC 61249-2-21 | Meets environmental mandates for RoHS-compliant manufacturing and disposal |
| JESD 201 Class 2 whisker resistance | Prevents tin whisker growth under thermal cycling, critical for automotive longevity |
Applications
| DC–DC Converters | Switching Inverters |
|---|---|
Use Scenario: Secondary-side rectification in isolated 48V–12V buck-derived converters for telecom and server PSUs. IC Role / Device Role / Timing Role: Fast recovery rectifier replacing Schottky diodes where higher VRRM and lower cost are required. Use Value: 200V VRRM and 50ns trr enable efficient operation at 200–500 kHz switching frequencies with reduced EMI vs. standard recovery diodes. | Use Scenario: Freewheeling path in 3-phase motor drive inverters for HVAC and industrial pumps. IC Role / Device Role / Timing Role: Unidirectional current clamp during inductive turn-off transients. Use Value: 150A IFSM withstands motor stall currents; 2°C/W RθJC supports forced-air-cooled PCB layouts without additional thermal vias. |
| Automotive Power Supplies | Industrial SMPS |
Use Scenario: Input rectification in 12V/24V battery-fed DC-DC modules for ADAS camera ECUs. IC Role / Device Role / Timing Role: High-reliability AC/DC front-end rectifier with AEC-Q101 option. Use Value: Glass passivation and JESD 201 Class 2 whisker resistance ensure >15-year field life in under-hood thermal cycling. | Use Scenario: Output rectification in 300W industrial open-frame power supplies. IC Role / Device Role / Timing Role: Main output diode in forward or flyback topology with 10A continuous load. Use Value: 10A IF rating at TC=100°C and 150°C TJ max allow derated operation without active cooling in enclosed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast recovery rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH10R06DJF | 600V VRRM, 10A IF, 60ns trr, TO-220AC package, no AEC-Q101 option | Higher voltage rating suits 400V bus systems; lacks automotive qualification | Select when 600V blocking is required and AEC-Q101 is not mandated |
| ON Semi MUR1020CT | 200V VRRM, 10A IF, dual common-cathode configuration, TO-220AB package | Dual-diode layout enables center-tapped transformer rectification; different pinout and thermal path | Choose for full-wave bridge or dual-output designs requiring shared cathode topology |
Compared with STTH10R06DJF and MUR1020CT, the HERAF1003G offers optimal balance of 200V rating, 50ns speed, and AEC-Q101 availability in ITO-220AC - making it preferred for cost-sensitive, thermally constrained automotive and industrial 200V-class rectification.
Availability
HERAF1003G is available at Aetrix Electronics and suitable for DC–DC converters, switching inverters, and automotive power supplies requiring stable component supply, long-lifecycle assurance, and traceable sourcing.
Supply support for HERAF1003G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS devices, and MOSFETs for industrial and automotive markets.
The HERAF series targets high-reliability, high-efficiency rectification in demanding power conversion applications - designed specifically for automotive-grade switching converters, industrial SMPS, and energy-efficient DC–DC modules where thermal robustness and surge resilience are critical.
FAQ
What is the maximum junction temperature rating for HERAF1003G?
The HERAF1003G has a maximum junction temperature (TJ max) of +150°C, verified per absolute maximum ratings in the official Taiwan Semiconductor datasheet (Version I2105). This rating enables reliable operation in under-hood automotive environments and enclosed industrial power supplies. Derating curves in the datasheet define safe operating area versus case temperature, and the 2°C/W RθJC supports thermal design up to this limit when mounted to an appropriate heatsink.
Is HERAF1003G pin-compatible with other ITO-220AC rectifiers like STTH10R06DJF?
Yes, HERAF1003G uses the standard ITO-220AC package with anode-on-tab and cathode-on-lead pinout, matching mechanical and thermal footprints of STTH10R06DJF and similar parts. However, electrical characteristics differ: HERAF1003G is rated for 200V VRRM and 50ns trr, while STTH10R06DJF is 600V/60ns. PCB layout reuse is possible, but circuit validation is required due to voltage and recovery timing differences.
Does HERAF1003G meet AEC-Q101 qualification?
The base HERAF1003G is not AEC-Q101 qualified, but the variant HERAF1003GH is explicitly listed in the ordering table as AEC-Q101 qualified. Per Taiwan Semiconductor's documentation, the "H" suffix denotes full AEC-Q101 stress testing compliance. For automotive applications requiring qualification, HERAF1003GH must be specified - it shares identical electrical and thermal specs with HERAF1003G except for the qualification status and associated test documentation.
What is the forward voltage drop of HERAF1003G at 10A and 125°C?
The datasheet specifies VF ≤ 1.0 V at IF = 10A and TJ = 25°C. While no exact value is given at 125°C, typical VF increases ~2 mV/°C for silicon fast recovery diodes; extrapolating yields ~1.2 V at 125°C. For precise thermal modeling, use the forward characteristic curve (Fig.4) in the Taiwan Semiconductor HERAF1001G–1008G datasheet, which shows VF vs. IF across temperatures including 125°C.
How does the 50ns reverse recovery time of HERAF1003G impact EMI in high-frequency converters?
The 50ns trr of HERAF1003G reduces switching node voltage overshoot and ringing during turn-off, directly lowering broadband conducted and radiated EMI in converters operating above 100 kHz. Compared to standard recovery diodes (>500ns), this enables smaller snubber components and relaxed filtering - critical for meeting CISPR-25 Class 5 in automotive power supplies. The datasheet's Fig.6 confirms test conditions and waveform integrity under standardized recovery measurement.
HERAF1003G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- TO-220-2 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io):
- 10A
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 10 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 50 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 200 V
- Capacitance @ Vr, F:
- 80pF @ 4V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- ITO-220AC
- Operating Temperature - Junction:
- -55°C ~ 150°C
HERAF1003G FAQ
1.How can I place an order for HERAF1003G through Aetrix?
Please submit a Request for Quotation (RFQ) for HERAF1003G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HERAF1003G reliable?
The price and inventory of HERAF1003G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HERAF1003G is usually 5 days.
3.What payment methods are accepted for HERAF1003G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HERAF1003G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HERAF1003G?
HERAF1003G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HERAF1003G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HERAF1003G?
For technical support, including HERAF1003G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HERAF1003G requirements.
6.How does Aetrix verify that HERAF1003G is sourced from the original manufacturer or authorized distributors?
All HERAF1003G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HERAF1003G meets industry standards.
7.What is the process for return or replacement of HERAF1003G?
All HERAF1003G units undergo pre-shipment inspection (PSI). If there is an issue with HERAF1003G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HERAF1003G part is unused and in its original packaging.
Return procedure for HERAF1003G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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