Taiwan Semiconductor Corporation HERAF803G

Overview

HERAF803G from Taiwan Semiconductor is a glass-passivated, single-die, high-efficiency fast recovery rectifier in ITO-220AC package, rated for 200 V repetitive peak reverse voltage (VRRM), 8 A average forward current (IF), and 150 A non-repetitive surge current (IFSM), used in DC-DC converters and freewheeling paths in automotive power supplies.

For engineers reviewing the HERAF803G datasheet, HERAF803G pinout, HERAF803G application, or HERAF803G equivalent, key selection factors include its 200 V VRRM rating, 1.0 V typical forward voltage at 8 A/25°C, 50 ns reverse recovery time, junction-to-case thermal resistance of 2 °C/W, and AEC-Q101 qualification option (HERAF803GH).

Technical Context

The HERAF803G employs a planar epitaxial silicon die with glass passivation to ensure stable reverse leakage (<10 µA at 25°C) and robust surge handling (150 A, 8.3 ms sine wave). Its fast trr of 50 ns enables efficient operation in high-frequency switching topologies up to several hundred kHz.

Thermally, the ITO-220AC package delivers 2 °C/W junction-to-case resistance, supporting continuous 8 A conduction at case temperatures ≤100°C per derating curves. The device operates across -55°C to +150°C junction temperature range and meets UL 94V-0 flammability and JESD201 Class 2 whisker resistance requirements.

Key Specifications

Pinout & Package

ITO-220AC package: 3-terminal through-hole outline with isolated tab (cathode-connected), matte tin-plated leads, UL 94V-0 molding compound, 1.70 g mass, polarity marked on body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency rectifier applications.

Compared with STTH8R02DJF and VS-8EWH02FN-M3, the HERAF803G offers balanced VF/trr trade-off (1.0 V / 50 ns), native ITO-220AC mechanical fit, and optional AEC-Q101 qualification-making it optimal for cost-sensitive automotive and industrial SMPS where thermal performance and reliability validation are prioritized over marginal VF or trr extremes.

Availability

HERAF803G is available at Aetrix Electronics and suitable for DC-DC converter output rectification, automotive freewheeling circuits, and switching mode inverter auxiliary supplies requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for HERAF803G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS devices, and MOSFETs for industrial and automotive markets.

The HERAF series was developed to deliver high-reliability, high-efficiency rectification in compact ITO-220AC packages for automotive-grade power conversion and industrial SMPS where thermal robustness and surge resilience are critical.

FAQ

What is the maximum junction temperature rating for HERAF803G?

The HERAF803G has a maximum junction temperature (TJ MAX) of +150°C, validated across its full operating range from –55°C to +150°C. This rating supports reliable operation in under-hood automotive environments and sealed industrial enclosures. Derating curves in the datasheet specify that 8 A average forward current is sustainable up to 100°C case temperature, with linear reduction beyond that point. Thermal design must account for the 2 °C/W junction-to-case resistance to avoid exceeding TJ MAX.

Is HERAF803G pin-compatible with other devices in the HERAF801G–HERAF808G family?

Yes, all HERAF801G through HERAF808G devices share identical ITO-220AC packaging, pinout, and terminal configuration - Anode (Lead 1), Cathode (Lead 2), and Cathode-connected tab. This allows direct substitution within the same voltage grade group (e.g., HERAF803G ↔ HERAF803GH) without layout changes. However, voltage ratings differ across the family, so electrical validation is required before interchanging HERAF803G with HERAF804G or HERAF802G in circuit design.

Does HERAF803G meet automotive qualification standards?

The base HERAF803G is not AEC-Q101 qualified, but its variant HERAF803GH is fully AEC-Q101 qualified and tested per stress test conditions including HTGB, HTRB, TCT, and UHAST. HERAF803GH is intended for automotive powertrain, body electronics, and chassis applications requiring zero-defect reliability. Both versions share identical electrical specs and package dimensions; only the qualification status and marking code ('H' suffix) differ.

What is the reverse recovery time (trr) specification for HERAF803G, and how is it measured?

The HERAF803G has a maximum reverse recovery time (trr) of 50 ns, measured under conditions of IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A per JEDEC standard test methods. This value applies to HERAF801G–HERAF805G variants and reflects the device's fast-switching capability in high-frequency converters. The 50 ns trr contributes directly to reduced switching losses and lower EMI generation compared to standard recovery diodes, especially in 100–500 kHz SMPS designs.

How does the forward voltage (VF) of HERAF803G compare across temperature and current?

The HERAF803G exhibits a typical forward voltage of 1.0 V at 8 A and 25°C, rising to approximately 1.15 V at 8 A and 125°C due to positive temperature coefficient of VF. At lower currents (e.g., 1 A), VF drops to ~0.85 V at 25°C. These values are confirmed in the "Typical Forward Characteristics" curve (Fig.4) of the datasheet. Designers should use the 1.0 V typ value for room-temperature efficiency calculations and apply derating above 75°C junction temperature.