Taiwan Semiconductor Corporation HERAF1001G

Overview

HERAF1001G from Taiwan Semiconductor is a 10 A, 50 V repetitive peak reverse voltage (V_RRM) glass-passivated high-efficiency rectifier diode in ITO-220AC package, featuring 1.0 V max forward voltage at 10 A and 25 °C, 150 A surge capability, and AEC-Q101 qualification option. It serves as a primary output rectifier in automotive DC-DC converters.

For engineers reviewing the HERAF1001G datasheet, HERAF1001G pinout, HERAF1001G application, or HERAF1001G equivalent, key selection criteria include its 50 V V_RRM, low 1.0 V V_F at rated current, 2 °C/W junction-to-case thermal resistance, 50 ns reverse recovery time, and ITO-220AC mechanical compatibility with heatsink mounting.

Technical Context

This device is a single-die, standard recovery silicon rectifier optimized for switching-mode power supplies operating below 100 kHz. Its glass passivation ensures stable junction performance under thermal cycling and humidity stress, while the ITO-220AC package enables direct heatsink attachment via screw-mount (0.56 N·m max torque).

The HERAF1001G exhibits 80 pF junction capacitance at 4.0 V reverse bias and 1 MHz, and maintains ≤10 µA reverse leakage at 25 °C - critical for minimizing standby losses in high-efficiency 12 V–48 V automotive DC-DC stages.

Key Specifications

Pinout & Package

Package: ITO-220AC - Insulated TO-220 variant with electrically isolated tab, matte tin-plated leads (J-STD-002 compliant), UL 94V-0 molding compound, and polarity marking on case.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, medium-voltage rectifier applications.

Compared with STTH10R06DJF and MUR1050CT, the HERAF1001G delivers lower forward voltage (1.0 V vs. ≥1.15 V), tighter thermal resistance (2 °C/W vs. ~2.5 °C/W), and optional AEC-Q101 qualification - making it optimal for space- and efficiency-constrained automotive 12 V DC-DC stages where 50 V blocking suffices.

Availability

HERAF1001G is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial 48 V telecom rectifiers, and onboard charger auxiliary supplies requiring stable component supply and long-lifecycle support.

Supply support for HERAF1001G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power devices, rectifiers, and protection components since 1979.

The HERAF series targets high-reliability power conversion in automotive and industrial environments, with design emphasis on low V_F, robust surge handling, and extended temperature operation - directly addressing thermal and longevity demands of modern 12 V–48 V power architectures.

FAQ

What is the maximum junction temperature rating for HERAF1001G?

The HERAF1001G has a maximum junction temperature (T_J) of +150 °C and a minimum of −55 °C. This wide operating range allows use in under-hood automotive applications where ambient temperatures exceed 105 °C, provided thermal design maintains junction temperature within limits using the specified 2 °C/W R_θJC. The HERAF1001G must be mounted to a heatsink with proper torque (≤0.56 N·m) to achieve this rating.

Is HERAF1001G pin-compatible with standard TO-220AC rectifiers?

Yes, the HERAF1001G uses the ITO-220AC package, which shares identical mechanical footprint and lead spacing with TO-220AC but features an electrically isolated metal tab. This allows drop-in replacement in existing TO-220AC layouts when isolation is not required, or enhanced isolation when the tab is grounded or floated per system safety requirements. The HERAF1001G pinout remains Anode–Cathode–Isolated Tab.

Does HERAF1001G meet automotive qualification standards?

The HERAF1001G itself is not AEC-Q101 qualified, but the HERAF1001GH variant is explicitly certified to AEC-Q101. Both share identical electrical and thermal specifications; the "H" suffix denotes qualification testing including HTOL, temperature cycling, and unbiased HAST. For automotive production, specify HERAF1001GH - the HERAF1001G is intended for industrial or non-automotive applications where qualification is not mandated.

What is the reverse recovery time (t_rr) of HERAF1001G and how is it measured?

The HERAF1001G has a typical reverse recovery time (t_rr) of 50 ns, measured under conditions of I_F = 0.5 A, I_R = 1.0 A, and I_rr = 0.25 A at T_A = 25 °C. This value reflects fast minority-carrier recombination enabled by optimized doping and passivation. The HERAF1001G's t_rr is confirmed in the official TSC datasheet Version I2105 and applies specifically to the HERAF1001G–HERAF1005G subgroup.

How does the glass passivation in HERAF1001G improve long-term reliability?

Glass passivation in the HERAF1001G forms a hermetic, chemically inert barrier over the silicon junction, preventing oxidation, moisture ingress, and ion migration during thermal cycling and humidity exposure. This directly extends operational lifetime in harsh environments - validated by JESD22-A108 and A110 testing - and maintains stable reverse leakage (<10 µA at 25 °C) over 15+ years, a requirement for automotive and industrial power modules where field failure is unacceptable. The HERAF1001G leverages this for consistent performance in engine bay and telecom equipment deployments.