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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IPP06CNE8N G MOSFET N-CH 85V 100A TO220-3 Infineon Technologies	6,630	RFQ	Datasheet	OptiMOS™ 2	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	85 V	100A (Tc)	10V	6.5mOhm @ 100A, 10V	4V @ 180µA	138 nC @ 10 V	±20V	9240 pF @ 40 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3
IRF6611 MOSFET N-CH 30V 32A DIRECTFET Infineon Technologies	2,201	RFQ	Datasheet	HEXFET®	DirectFET™ Isometric MX	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	32A (Ta), 150A (Tc)	4.5V, 10V	2.6mOhm @ 27A, 10V	2.25V @ 250µA	56 nC @ 4.5 V	±20V	4860 pF @ 15 V	-	3.9W (Ta), 89W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	DIRECTFET™ MX
IGLD65R140D2AUMA1 GAN HV Infineon Technologies	6,332	RFQ	-	CoolGaN™	8-LDFN Exposed Pad	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	12A (Tc)	-	-	1.6V @ 1mA	2.6 nC @ 3 V	-10V	130 pF @ 400 V	-	42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-LSON-8-1
SPI70N10L MOSFET N-CH 100V 70A TO262-3 Infineon Technologies	7,537	RFQ	Datasheet	SIPMOS®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	70A (Tc)	4.5V, 10V	16mOhm @ 50A, 10V	2V @ 2mA	240 nC @ 10 V	±20V	4540 pF @ 25 V	-	250W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO262-3-1
IRFU2407 MOSFET N-CH 75V 42A IPAK Infineon Technologies	6,621	RFQ	Datasheet	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	75 V	42A (Tc)	10V	26mOhm @ 25A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	2400 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK (TO-251AA)
IRF7456TRPBF MOSFET N-CH 20V 16A 8SO Infineon Technologies	2,087	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	16A (Ta)	2.8V, 10V	6.5mOhm @ 16A, 10V	2V @ 250µA	62 nC @ 5 V	±12V	3640 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRL530NSTRRPBF MOSFET N-CH 100V 17A D2PAK Infineon Technologies	5,845	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	17A (Tc)	4V, 10V	100mOhm @ 9A, 10V	2V @ 250µA	34 nC @ 5 V	±20V	800 pF @ 25 V	-	3.8W (Ta), 79W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRL520NSTRLPBF MOSFET N-CH 100V 10A D2PAK Infineon Technologies	4,965	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	10A (Tc)	4V, 10V	180mOhm @ 6A, 10V	2V @ 250µA	20 nC @ 5 V	±16V	440 pF @ 25 V	-	3.8W (Ta), 48W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
AUIRLL014NTR MOSFET N-CH 55V 2A SOT-223 Infineon Technologies	9,551	RFQ	Datasheet	HEXFET®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	2A (Ta)	4V, 10V	140mOhm @ 2A, 10V	2V @ 250µA	14 nC @ 10 V	±16V	230 pF @ 25 V	-	1W (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-SOT223-4
AUIRLR3110ZTRL MOSFET N-CH 100V 63A DPAK Infineon Technologies	9,272	RFQ	Datasheet	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	100 V	42A (Tc)	-	14mOhm @ 38A, 10V	2.5V @ 100µA	48 nC @ 4.5 V	-	3980 pF @ 25 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)

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