Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP06CNE8N G

Name: IPP06CNE8N G
Brand: Infineon Technologies
SKU: IPP06CNE8N G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPP06CNE8N G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP06CNE8N G.pdf

Description:: MOSFET N-CH 85V 100A TO220-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,630

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPP06CNE8N G from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO220-3 package, rated for 85 V V_DS, 6.5 mΩ R_DS(on) (max) at V_GS = 10 V and I_D = 100 A, with 175 °C maximum junction temperature and optimized for high-frequency synchronous rectification in DC-DC converters.

For engineers reviewing the IPP06CNE8N G datasheet, IPP06CNE8N G pinout, IPP06CNE8N G application, or IPP06CNE8N G equivalent, key selection criteria include its low gate charge × R_DS(on) figure-of-merit (FOM), robust avalanche energy rating (480 mJ), and validated performance under 100 A continuous drain current at T_C = 100 °C.

Technical Context

This OptiMOS™2 device employs a trench-gate silicon process to achieve ultra-low on-resistance and fast switching dynamics. Its 4.7–6.2 mΩ typical R_DS(on) (TO263 variant) and 103–138 nC total gate charge enable high-efficiency operation in hard-switched topologies up to several hundred kHz.

The MOSFET features a fully characterized reverse diode with 110 ns t_rr, 280 nC Q_rr, and 1.0–1.2 V V_SD at 100 A, supporting synchronous rectification without external Schottky replacement in 12 V/48 V intermediate bus converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	85 V - Maximum blocking voltage for 12 V/48 V input stage and secondary-side synchronous rectification
R_DS(on) max	6.5 mΩ @ V_GS=10 V, I_D=100 A - Enables <1.5 W conduction loss at 100 A in TO220 package
I_D cont.	100 A @ T_C=25 °C - Supported by 0.7 K/W R_thJC thermal path to heatsink
E_AS	480 mJ - Withstands single-pulse inductive turn-off stress in non-isolated buck or flyback outputs
Q_g	103–138 nC - Determines gate driver power requirement and switching loss trade-off at >200 kHz
t_r/t_f	27–40 ns / 7–10 ns - Supports clean edge control in high dv/dt environments (6 kV/µs diode dv/dt rating)
V_GS(th)	2–4 V - Ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers

Pinout & Package

IPP06CNE8N G is housed in PG-TO220-3 package: isolated tab (Drain), center lead (Source), right lead (Gate). The metal tab is electrically connected to Drain and serves as primary thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Mounting Surface)	Drain (D)	Primary current and thermal path; requires insulating pad if heatsink is grounded
Center Lead	Source (S)	Reference node for gate drive and current sensing; low-inductance return path
Right Lead	Gate (G)	High-impedance control terminal; sensitive to ESD and ringing-requires local RC snubber

Key Features

Feature	Design Value
N-channel normal-level operation	Turns on fully with 10 V gate drive-compatible with standard PWM controllers and discrete gate drivers
Optimized FOM (Q_g × R_DS(on))	~0.65 nC·Ω - Balances switching loss and conduction loss in 300–500 kHz DC-DC stages
175 °C rated junction temperature	Enables derating headroom for industrial ambient (85 °C) and high-power density designs
JEDEC-qualified reliability	Validated per J-STD-20/JESD22 for automotive and industrial reflow and storage conditions
Halogen-free & RoHS-compliant	Meets IEC61249-2-21 and EU RoHS Directive 2011/65/EU for green manufacturing

Applications

Server VRM Output Stage

Industrial 48 V DC-DC Converter

Use Scenario: High-current, high-efficiency point-of-load regulation delivering up to 200 A to CPU/GPU cores.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter secondary side.

Use Value: 6.5 mΩ R_DS(on) reduces conduction loss below 1.3 W at 100 A, improving full-load efficiency by ≥0.8% vs. legacy 8 mΩ devices.

Use Scenario: Isolated or non-isolated 48 V-to-12 V step-down for PLC I/O modules and motor drives.

IC Role / Device Role / Timing Role: Primary-side switch in hard-switched forward or active-clamp forward topology.

Use Value: 480 mJ E_AS withstands leakage inductance spikes during ZVS transition failure, enhancing system robustness.

Telecom Rectifier Module

EV Onboard Charger (OBC) Auxiliary Supply

Use Scenario: Secondary-side synchronous rectification in 48 V telecom rectifiers operating at 200–300 kHz.

IC Role / Device Role / Timing Role: Low-side switch in synchronous rectifier configuration with adaptive gate timing.

Use Value: 110 ns t_rr and 280 nC Q_rr minimize reverse recovery loss and cross-conduction risk during dead-time transitions.

Use Scenario: Auxiliary 12 V supply generation from high-voltage battery (200–450 V) in bidirectional OBC systems.

IC Role / Device Role / Timing Role: High-side switch in flyback or resonant LLC auxiliary controller stage.

Use Value: 85 V V_DS rating provides 2× margin over 42 V nominal output, ensuring long-term reliability under load dump transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PbF	R_DS(on) = 4.7 mΩ (typ), Q_g = 131 nC, V_DS = 40 V - lower voltage rating, higher gate charge	Not suitable for 48 V bus or >40 V blocking; limited to 12 V/24 V primary switches	Select only when V_DS stress remains ≤32 V and gate drive capability exceeds 2 A peak.
STP80NF55-08	R_DS(on) = 8.0 mΩ (max), Q_g = 120 nC, V_DS = 55 V - higher on-resistance, same voltage class	Acceptable for 48 V secondary-side use but increases conduction loss by ~22% at 100 A	Prefer where cost sensitivity outweighs efficiency targets and thermal margin is ample.

Compared with IRF1404PbF and STP80NF55-08, IPP06CNE8N G delivers superior voltage margin (85 V), lower R_DS(on) than STP80NF55-08, and better FOM than both-making it optimal for 48 V industrial and telecom power stages requiring efficiency and ruggedness.

Availability

IPP06CNE8N G is available at Aetrix Electronics and suitable for server VRM output stages, industrial 48 V DC-DC converters, and telecom rectifier modules requiring stable component supply across multi-year production cycles.

Supply support for IPP06CNE8N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and RF solutions, with global manufacturing and qualification infrastructure.

This device belongs to the OptiMOS™2 product line-designed specifically for high-efficiency, high-current DC-DC conversion in computing, telecom, and industrial power supplies.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

IPP06CNE8N G supports 88 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper heatsinking with thermal resistance R_thJC = 0.7 K/W and accounts for bondwire current limitation-not silicon thermal limits.

Is IPP06CNE8N G suitable for synchronous rectification in a 48 V to 12 V LLC converter?

Yes-its 85 V V_DS, 6.5 mΩ R_DS(on), and 110 ns reverse recovery time make it well-suited for secondary-side synchronous rectification in 48 V input LLC converters operating up to 300 kHz, provided gate drive timing avoids shoot-through during diode commutation.

Does this MOSFET require a gate resistor for stability in hard-switched applications?

Yes-a series gate resistor (typically 2.2–10 Ω) is recommended to dampen gate ringing caused by L_g–C_iss resonance and limit peak gate current. The device's 1.6 Ω intrinsic gate resistance is insufficient alone for EMI-sensitive or high-dv/dt layouts.

How does the 175 °C junction rating impact thermal design compared to 150 °C-rated alternatives?

The 175 °C rating allows 25 °C higher junction temperature rise before thermal shutdown, enabling either reduced heatsink size at same power or 10–15% higher sustained current in thermally constrained enclosures-without altering PCB copper area or airflow requirements.

IPP06CNE8N G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 2

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 85 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 180µA

Gate Charge (Qg) (Max) @ Vgs:: 138 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9240 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP06CNE8N G FAQ

1.How can I place an order for IPP06CNE8N G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP06CNE8N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP06CNE8N G reliable?

The price and inventory of IPP06CNE8N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP06CNE8N G is usually 5 days.

3.What payment methods are accepted for IPP06CNE8N G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP06CNE8N G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP06CNE8N G?

IPP06CNE8N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP06CNE8N G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP06CNE8N G?

For technical support, including IPP06CNE8N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP06CNE8N G requirements.

6.How does Aetrix verify that IPP06CNE8N G is sourced from the original manufacturer or authorized distributors?

All IPP06CNE8N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP06CNE8N G meets industry standards.

7.What is the process for return or replacement of IPP06CNE8N G?

All IPP06CNE8N G units undergo pre-shipment inspection (PSI). If there is an issue with IPP06CNE8N G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP06CNE8N G part is unused and in its original packaging.

Return procedure for IPP06CNE8N G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…