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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
ISK057N04LM6ATLA1 MOSFET N-CH 40V 64A 6VSON Infineon Technologies	5,156	RFQ	Datasheet	OptiMOS™ 6	6-PowerVDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	64A (Tc)	4.5V, 10V	5.75mOhm @ 20A, 10V	2.3V @ 250µA	12 nC @ 10 V	±20V	870 pF @ 20 V	-	2.1W (Ta), 39.1W (Tc)	-55°C ~ 155°C (TJ)	-	-	Surface Mount	PG-VSON-6-1
IRF7240TR MOSFET P-CH 40V 10.5A 8SO Infineon Technologies	7,928	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	40 V	10.5A (Ta)	4.5V, 10V	15mOhm @ 10.5A, 10V	3V @ 250µA	110 nC @ 10 V	±20V	9250 pF @ 25 V	-	2.5W (Ta)	-55°C ~ 155°C (TJ)	-	-	Surface Mount	8-SOIC
SPP11N60CFDXKSA1 MOSFET N-CH 650V 11A TO220-3 Infineon Technologies	6,171	RFQ	Datasheet	CoolMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	11A (Tc)	10V	440mOhm @ 7A, 10V	5V @ 500µA	64 nC @ 10 V	±20V	1200 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-1
SPP11N60CFDHKSA1 MOSFET N-CH 600V 11A TO220-3 Infineon Technologies	5,073	RFQ	Datasheet	CoolMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	11A (Tc)	10V	440mOhm @ 7A, 10V	5V @ 500µA	64 nC @ 10 V	±20V	1200 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-1
BTS244Z E3043 MOSFET N-CH 55V 35A TO220-5-43 Infineon Technologies	6,053	RFQ	Datasheet	TEMPFET®	TO-220-5	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	35A (Tc)	4.5V, 10V	13mOhm @ 19A, 10V	2V @ 130µA	130 nC @ 10 V	±20V	2660 pF @ 25 V	Temperature Sensing Diode	170W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	P-TO220-5-43
SPB80N06S2-05 MOSFET N-CH 55V 80A TO263-3 Infineon Technologies	9,345	RFQ	Datasheet	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	80A (Tc)	10V	4.8mOhm @ 80A, 10V	4V @ 250µA	170 nC @ 10 V	±20V	6790 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3-2
SPB80N03S2L-03 MOSFET N-CH 30V 80A TO263-3 Infineon Technologies	9,530	RFQ	Datasheet	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	80A (Tc)	4.5V, 10V	2.8mOhm @ 80A, 10V	2V @ 250µA	220 nC @ 10 V	±20V	8180 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3-2
SPB80N03S2L-03 G MOSFET N-CH 30V 80A TO263-3 Infineon Technologies	9,364	RFQ	Datasheet	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	80A (Tc)	4.5V, 10V	2.8mOhm @ 80A, 10V	2V @ 250µA	220 nC @ 10 V	±20V	8180 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3-2
BSC240N12NS3 G MOSFET N-CH 120V 37A TDSON-8-1 Infineon Technologies	8,233	RFQ	Datasheet	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	120 V	37A (Tc)	10V	24mOhm @ 31A, 10V	4V @ 35µA	27 nC @ 10 V	±20V	1900 pF @ 60 V	-	66W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TDSON-8-1
IRFZ46Z MOSFET N-CH 55V 51A TO220AB Infineon Technologies	4,052	RFQ	Datasheet	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	51A (Tc)	10V	13.6mOhm @ 31A, 10V	4V @ 250µA	46 nC @ 10 V	±20V	1460 pF @ 25 V	-	82W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB

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