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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFZ46Z

Name: IRFZ46Z
Brand: Infineon Technologies
SKU: IRFZ46Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ46Z

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFZ46Z.pdf

Description:: MOSFET N-CH 55V 51A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFZ46Z from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, rated for 55V V_DSS, 13.6mΩ R_DS(on) at V_GS = 10V, and 51A continuous drain current at T_C = 25°C. It delivers fast switching (t_r = 63ns), supports repetitive avalanche up to T_jmax = 175°C, and is used in DC-DC converters, motor drives, and power supply synchronous rectification.

For engineers reviewing the IRFZ46Z datasheet, IRFZ46Z pinout, IRFZ46Z application, or IRFZ46Z equivalent, key selection criteria include its low on-resistance per silicon area, thermally robust 175°C junction rating, gate charge profile (Q_g = 31–46nC), body diode recovery performance (t_rr = 21–31ns), and validated unclamped inductive switching capability.

Technical Context

This MOSFET employs advanced planar silicon processing to minimize conduction losses while maintaining high dv/dt immunity and ruggedness against unclamped inductive switching. Its gate threshold voltage (V_GS(th) = 2.0–4.0V) enables compatibility with standard 5V and 10V logic-level drivers, and its dynamic parameters-including C_iss = 1460pF, C_oss = 250pF, and Q_gd = 12–18nC-support efficient hard-switching operation up to several hundred kHz.

The integrated body diode exhibits V_SD ≤ 1.3V at 31A and t_rr = 21–31ns under specified di/dt conditions, enabling reliable freewheeling in buck and half-bridge topologies. Thermal design is supported by R_θJC = 1.84°C/W and R_θJA = 40°C/W (PCB mount), with linear derating above 25°C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55V - Maximum blocking voltage before avalanche; sets upper limit for bus voltage in 48V systems.
R_DS(on)	13.6mΩ max @ V_GS = 10V, T_j = 25°C - Determines conduction loss (P_cond ≈ I_D² × R_DS(on)) in high-current paths.
I_D (cont)	51A @ T_C = 25°C - Sustained current capability with heatsink; derates to 36A at T_C = 100°C.
Q_g	46nC max - Total gate charge required for full turn-on; directly impacts driver power and switching loss.
t_r/t_f	63ns / 39ns - Rise/fall times define minimum practical switching period and EMI generation profile.
E_AS	300mJ - Single-pulse avalanche energy rating; enables robustness against inductive load transients without external snubbers.
T_jmax	175°C - Maximum junction temperature; allows operation in high-ambient industrial environments with margin.

Pinout & Package

IRFZ46Z is housed in a through-hole TO-220AB package with isolated tab (drain-connected). The package features a metal tab for mechanical mounting and thermal conduction to heatsinks, and meets lead-free (PbF) compliance per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current return path to high-side switch node or ground-referenced output	Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink.
Source	Reference node for gate drive and current sensing; connects to power ground or low-side switch	Serves as common return for both channel current and body diode conduction; critical for accurate shunt-based current monitoring.
Gate	Control terminal for channel modulation	High-impedance input requiring <1µA bias; sensitive to ESD and ringing; needs localized RC snubber if driven by long traces.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	13.6mΩ max enables <1W conduction loss at 25A, reducing heatsink size in 50A-class power stages.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching (IAS = 31A, L = 0.13mH) without degradation-eliminates need for external clamping diodes in motor control H-bridges.
175°C operating junction	Supports sustained operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial PLCs) without thermal shutdown.
Fast switching with low Q_gd	Q_gd = 12–18nC minimizes Miller plateau duration, enabling clean turn-off even with moderate gate resistance (R_G = 15–25Ω).

Applications

DC-DC Buck Converter

Brushed DC Motor Drive

Use Scenario: High-efficiency 12V-to-5V/3.3V point-of-load converter in telecom infrastructure equipment.

IC Role / Device Role: Synchronous rectifier MOSFET replacing Schottky diode to reduce conduction loss and improve efficiency >92% at full load.

Use Value: 13.6mΩ R_DS(on) cuts rectifier loss by ~65% vs. 40V Schottky, enabling smaller magnetics and passive cooling.

Use Scenario: Full-bridge H-bridge driving 24V/30A brushed motors in warehouse automation conveyors.

IC Role / Device Role: Low-side switching element handling bidirectional current during PWM commutation and regenerative braking.

Use Value: Repetitive avalanche rating absorbs inductive kickback during rapid direction reversal, preventing failure without snubber networks.

AC-DC PFC Stage

UPS Inverter Output Stage

Use Scenario: Boost-type active PFC front-end in 1kW offline UPS units.

IC Role / Device Role: Fast-switching main switch operating at 65–100kHz with high peak current demands.

Use Value: 63ns rise time and 46nC Q_g allow efficient zero-voltage transition (ZVT) implementation, reducing switching loss by ~30% vs. older MOSFETs.

Use Scenario: 48V-to-230V line-frequency inverter stage in residential solar hybrid inverters.

IC Role / Device Role: Half-bridge leg switch managing 51A RMS output current with high thermal cycling stress.

Use Value: 175°C T_jmax and 1.84°C/W R_θJC support 10-year field life under 45°C ambient with minimal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60V V_DSS, 14mΩ R_DS(on), TO-220, lower Q_g (34nC), no avalanche rating	Lacks repetitive avalanche validation; unsuitable for unclamped inductive loads without external protection	Prefer where bus voltage exceeds 55V but avalanche stress is absent (e.g., pure resistive loads).
IRFZ44N	55V V_DSS, 28mΩ R_DS(on), same package, higher R_DS(on), same avalanche rating	Higher conduction loss increases thermal load; requires larger heatsink at >25A	Select only when cost sensitivity outweighs efficiency and thermal margin requirements.

Compared with STP55NF06L and IRFZ44N, IRFZ46Z offers the optimal balance of low R_DS(on), validated avalanche ruggedness, and thermal headroom-making it preferred for high-reliability motor control and industrial SMPS where transient robustness is non-negotiable.

Availability

IRFZ46Z is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, UPS inverters, and industrial power supplies requiring stable component supply across multi-year production cycles.

Supply support for IRFZ46Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap device physics.

The HEXFET® Power MOSFET product line was engineered for high-efficiency, high-reliability power conversion in industrial, computing, and renewable energy systems-emphasizing ruggedness, thermal stability, and manufacturability in high-volume applications.

FAQ

Is IRFZ46Z logic-level compatible?

No-IRFZ46Z has a gate threshold voltage range of 2.0–4.0V but is specified for full enhancement at V_GS = 10V. Its R_DS(on) and switching performance are guaranteed only at 10V drive; 5V logic drivers will yield significantly higher on-resistance and slower switching, risking thermal runaway at high current.

Can IRFZ46Z be used in parallel configurations?

Yes-its positive temperature coefficient for R_DS(on) (see Fig. 10) provides inherent current sharing stability. For reliable paralleling, match devices from same wafer lot, use symmetrical PCB layout with individual gate resistors (≥10Ω), and ensure identical source inductance paths to avoid dynamic imbalance during switching transitions.

What is the maximum safe operating frequency for IRFZ46Z?

There is no fixed maximum frequency-the limit is set by thermal and loss trade-offs. At 51A and 100kHz with 10V gate drive, total losses (conduction + switching) typically exceed 10W, requiring substantial heatsinking. Practical hard-switching use is confirmed up to 250kHz in well-cooled, low-duty-cycle applications like resonant LLC primary switches.

Does IRFZ46Z require a gate resistor, and what value is recommended?

Yes-a gate resistor is mandatory to dampen ringing and control dV/dt. For TO-220 layouts with short traces, 15–25Ω is typical. Higher values (e.g., 47Ω) reduce EMI but increase switching loss; lower values (<10Ω) risk oscillation and overshoot. Always verify with oscilloscope measurement of V_GS and V_DS waveforms under actual load conditions.

IRFZ46Z Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 51A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 13.6mOhm @ 31A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 46 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1460 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 82W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFZ46Z FAQ

1.How can I place an order for IRFZ46Z through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ46Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ46Z reliable?

The price and inventory of IRFZ46Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ46Z is usually 5 days.

3.What payment methods are accepted for IRFZ46Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ46Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ46Z?

IRFZ46Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ46Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ46Z?

For technical support, including IRFZ46Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ46Z requirements.

6.How does Aetrix verify that IRFZ46Z is sourced from the original manufacturer or authorized distributors?

All IRFZ46Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ46Z meets industry standards.

7.What is the process for return or replacement of IRFZ46Z?

All IRFZ46Z units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ46Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ46Z part is unused and in its original packaging.

Return procedure for IRFZ46Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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