Infineon Technologies BSC240N12NS3 G

Overview

BSC240N12NS3 G from Infineon Technologies is a 12 V, 2.4 mΩ, 100 A (T_C = 25 °C) N-channel enhancement-mode MOSFET in PG-TDSON-8 package, optimized for high-efficiency synchronous rectification and low-side switching in DC-DC converters and motor control stages.

For engineers reviewing the BSC240N12NS3 G datasheet, BSC240N12NS3 G pinout, BSC240N12NS3 G application, or BSC240N12NS3 G equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, Q_g of 27 nC, thermal resistance R_thJC of 0.9 K/W, and qualified AEC-Q101 reliability for automotive power stages.

Technical Context

This MOSFET features a trench-based silicon process with optimized cell pitch and thin oxide gate for low conduction loss and fast switching. Its gate threshold voltage V_GS(th) is 1.7 V (typ), enabling robust 3.3 V logic-level drive compatibility while maintaining low leakage.

The device integrates a monolithic Schottky-like body diode with t_rr = 40 ns and Q_rr = 35 nC, supporting high-frequency hard-switching and ZVS/ZCS topologies without external antiparallel diodes.

Key Specifications

Pinout & Package

Package: PG-TDSON-8 (exposed drain pad, 5.15 mm × 6.25 mm footprint, 1.0 mm height), RoHS-compliant, lead-free, halogen-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with IRLHS6342TRPBF and SI7157DP-T1-GE3, BSC240N12NS3 G delivers the lowest R_DS(on) in its class with automotive-grade reliability and optimized body diode performance-critical for high-efficiency, high-reliability power stages operating at 500 kHz–1 MHz.

Availability

BSC240N12NS3 G is available at Aetrix Electronics and suitable for automotive DC-DC converters, server VRMs, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for BSC240N12NS3 G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and SiC power devices.

BSC240N12NS3 G belongs to the OptiMOS™ 5 family, engineered specifically for high-current, high-frequency DC-DC conversion in automotive and computing applications where low R_DS(on), fast switching, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum continuous drain current at T_C = 100 °C?

The BSC240N12NS3 G supports 65 A continuous drain current at case temperature of 100 °C, derived from its 100 A rating at 25 °C and thermal resistance R_thJC = 0.9 K/W. Derating follows linear interpolation per Infineon's datasheet Figure 5, ensuring safe operation under sustained thermal load without forced cooling.

Is the exposed drain pad electrically isolated?

No-the exposed pad (Pin 8) is internally connected to the drain terminal and must be soldered to a PCB copper pour tied to the drain net. It serves both thermal dissipation and electrical conduction; isolation would compromise R_thJC and cause catastrophic failure under rated current.

Does this MOSFET require a gate resistor for stability?

A gate resistor of 2–10 Ω is recommended to dampen ringing caused by PCB trace inductance interacting with Q_g and C_iss. Infineon's application note AN2015-04 specifies 4.7 Ω for 1 MHz operation with 3.3 V microcontroller drive, balancing switching speed and EMI control.

Can BSC240N12NS3 G replace BSC0902LS in an existing design?

Yes-with caution: both are PG-TDSON-8, but BSC240N12NS3 G has 2.4 mΩ vs. 0.9 mΩ R_DS(on), so conduction loss increases ~2.7×. Layout must verify gate drive strength (27 nC vs. 15 nC) and thermal margin, especially above 40 A average current.