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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB80N06S2-05

Name: SPB80N06S2-05
Brand: Infineon Technologies
SKU: SPB80N06S2-05
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB80N06S2-05

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB80N06S2-05.pdf

Description:: MOSFET N-CH 55V 80A TO263-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPB80N06S2-05 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™ power MOSFET in TO263-3 (D²PAK) package, rated for 55 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 4.8 mΩ max R_DS(on) at V_GS = 10 V. It features avalanche rating, 6 kV/µs dv/dt capability, and 175 °C maximum junction temperature-designed for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the SPB80N06S2-05 datasheet, SPB80N06S2-05 pinout, SPB80N06S2-05 application, or SPB80N06S2-05 equivalent, key selection criteria include R_DS(on) stability over temperature, single-pulse avalanche energy (810 mJ), gate charge profile (Q_g = 130–170 nC), and thermal resistance (R_thJC = 0.3–0.5 K/W).

Technical Context

This device employs trench-gate silicon technology optimized for low conduction and switching losses in high-current, medium-voltage applications. Its 4.8 mΩ R_DS(on) enables <1.5 W conduction loss at 80 A, while Q_gd = 53–80 nC and C_iss = 5110–6790 pF support fast, controlled switching with minimal Miller-induced shoot-through risk.

The integrated body diode exhibits V_SD = 0.9–1.3 V at 80 A and t_rr = 60–75 ns with Q_rr = 130–160 nC-critical for synchronous rectification and freewheeling in hard-switched topologies where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - supports 48 V nominal bus systems with 15% margin against transients
R_DS(on) max	4.8 mΩ at V_GS = 10 V, T_j = 25 °C - enables ≤3.1 W conduction loss at 80 A
I_D cont.	80 A at T_C = 25 °C - requires heatsink with R_thJC ≤ 0.5 K/W for full rating
E_AS	810 mJ - withstands single inductive turn-off events up to L·I²/2 = 0.81 J without failure
Q_g	130–170 nC - determines gate driver power requirement (~1.3–1.7 mC per switch cycle at 10 kHz)
t_r/t_f	21–31 ns / 20–30 ns - enables >500 kHz switching with low overlap loss in hard-switched converters
V_GS(th)	2.1–4.0 V - ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers

Pinout & Package

SPB80N06S2-05 uses the P-TO263-3-2 (D²PAK) surface-mount package with isolated drain tab. The drain connects to the large exposed copper pad on the underside; source and gate are gull-wing leads on the front edge.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; tied to PCB ground plane for thermal and electrical return path
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET control node requiring <100 nA leakage; sensitive to ESD
Pin 3 (Drain)	Power output (D)	Exposed metal pad on bottom surface-must be soldered to ≥6 cm² copper area for R_thJA = 40 K/W

Key Features

Feature	Design Value
Avalanche rated	810 mJ single-pulse energy - eliminates need for external snubbers in inductive load switching
dv/dt rated	6 kV/µs - prevents false turn-on during high-slew-rate voltage transients in motor drives
175 °C operation	Maximum T_j rating - enables compact thermal design in sealed enclosures without forced air
Optimized body diode	t_rr = 60–75 ns, Q_rr = 130–160 nC - reduces switching loss and voltage overshoot in synchronous rectification
Low gate charge	Q_gd/Q_g ratio ~0.45 - improves controllability and reduces Miller plateau duration

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Buck Converter

Use Scenario: High-current BLDC motor phase leg in industrial automation drives operating at 24–48 V bus.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge topology, commutated at 10–20 kHz with PWM dead-time control.

Use Value: 4.8 mΩ R_DS(on) limits conduction loss to <3.1 W at 80 A, while 810 mJ E_AS handles back-EMF clamping without external components.

Use Scenario: 48 V input to 12 V/60 A output isolated or non-isolated buck converter for telecom power shelves.

IC Role / Device Role / Timing Role: Primary synchronous rectifier in high-frequency (300–500 kHz) buck stage, driven by dedicated gate controller.

Use Value: Low Q_g (130–170 nC) and fast t_r/t_f reduce switching loss; body diode Q_rr = 130–160 nC minimizes reverse recovery loss during light-load discontinuous mode.

Industrial UPS Inverter Stage

Automotive 48 V Mild Hybrid DC-Link Switch

Use Scenario: Bidirectional inverter leg in 3 kW line-interactive UPS converting 48 V battery to 230 V AC via H-bridge.

IC Role / Device Role / Timing Role: High-current unidirectional switch in inverter half-bridge, conducting 80 A RMS with 100 µs pulse width modulation.

Use Value: 175 °C T_jmax and R_thJC = 0.3 K/W enable operation under sustained overload without derating in confined chassis space.

Use Scenario: 48 V battery disconnect and load-dump protection switch in 48 V mild hybrid vehicle power distribution unit.

IC Role / Device Role / Timing Role: High-side power switch controlling main traction auxiliary loads (cooling pumps, compressors) with active short-circuit protection.

Use Value: Avalanche rating (810 mJ) absorbs inductive kickback from solenoid loads; ±20 V V_GS rating supports robust gate drive under automotive load-dump conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 5.5 mΩ @ 10 V; Q_g = 140 nC; TO-220 package	Higher R_DS(on) increases conduction loss by ~15%; through-hole mounting limits board density	Preferred where mechanical robustness and legacy footprint compatibility outweigh thermal performance needs
STL220N6F7	R_DS(on) = 3.8 mΩ @ 10 V; Q_g = 190 nC; PowerFLAT 8x8 package	Lower R_DS(on) improves efficiency but higher Q_g demands stronger gate driver; smaller footprint reduces thermal mass	Best for space-constrained designs needing <4 mΩ R_DS(on), provided gate driver can supply >2 A peak current

Compared with IRFB4115PBF and STL220N6F7, SPB80N06S2-05 delivers optimal balance of low R_DS(on), moderate Q_g, and D²PAK thermal performance-making it ideal for industrial motor drives and telecom power supplies where reliability under sustained high-current stress is critical.

Availability

SPB80N06S2-05 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and automotive 48 V power distribution systems requiring stable component supply and long-term lifecycle assurance.

Supply support for SPB80N06S2-05 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

SPB80N06S2-05 belongs to the OptiMOS™ 2nd generation power MOSFET product line, engineered specifically for high-current, medium-voltage switching in industrial motor control and server power applications where thermal robustness and avalanche immunity are mandatory.

FAQ

What is the maximum allowable gate-source voltage for SPB80N06S2-05?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. For reliable switching, gate drive should be limited to 10–15 V for full enhancement, with transient spikes clamped below ±20 V using Zener diodes or gate driver ICs with built-in overvoltage protection.

Can SPB80N06S2-05 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (increasing with junction temperature) enables inherently stable current sharing when paralleled. To ensure balanced dynamic current distribution, match gate loop inductance and use individual gate resistors (typically 2.2–4.7 Ω) per device to damp oscillations and equalize turn-on timing.

What is the recommended PCB layout for thermal performance?

Mount the D²PAK drain pad directly to ≥6 cm² of 70 µm thick copper on an FR4 PCB, with vertical orientation and no forced airflow. Use at least six thermal vias (0.3 mm diameter, spaced ≤2 mm apart) connecting the pad to internal ground planes. Keep gate and source traces short and wide to minimize inductance and ringing during switching transitions.

Does SPB80N06S2-05 require external avalanche protection?

No-its 810 mJ single-pulse avalanche energy rating is fully tested and guaranteed. This allows direct use in inductive switching applications (e.g., motor phase legs, solenoid drivers) without snubber networks, provided the energy per switching event stays within the E_AS limit and junction temperature remains below 175 °C during the event.

SPB80N06S2-05 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6790 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB80N06S2-05 FAQ

1.How can I place an order for SPB80N06S2-05 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB80N06S2-05 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB80N06S2-05 reliable?

The price and inventory of SPB80N06S2-05 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB80N06S2-05 is usually 5 days.

3.What payment methods are accepted for SPB80N06S2-05?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB80N06S2-05 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB80N06S2-05?

SPB80N06S2-05 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB80N06S2-05 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB80N06S2-05?

For technical support, including SPB80N06S2-05 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB80N06S2-05 requirements.

6.How does Aetrix verify that SPB80N06S2-05 is sourced from the original manufacturer or authorized distributors?

All SPB80N06S2-05 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB80N06S2-05 meets industry standards.

7.What is the process for return or replacement of SPB80N06S2-05?

All SPB80N06S2-05 units undergo pre-shipment inspection (PSI). If there is an issue with SPB80N06S2-05, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB80N06S2-05 part is unused and in its original packaging.

Return procedure for SPB80N06S2-05:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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