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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB80N03S2L-03 G

Name: SPB80N03S2L-03 G
Brand: Infineon Technologies
SKU: SPB80N03S2L-03 G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB80N03S2L-03 G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB80N03S2L-03 G.pdf

Description:: MOSFET N-CH 30V 80A TO263-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPB80N03S2L-03 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET in TO263-3 (D²PAK) package, rated for 30 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 2.3–3.5 mΩ R_DS(on) at V_GS = 4.5 V. It features avalanche rating, 175 °C operation, and optimized gate charge × R_DS(on) figure-of-merit for high-efficiency synchronous rectification in DC-DC converters.

For engineers reviewing the SPB80N03S2L-03 datasheet, SPB80N03S2L-03 pinout, SPB80N03S2L-03 application, or SPB80N03S2L-03 equivalent, key selection criteria include its low R_DS(on) at 4.5 V drive, 6 kV/µs dv/dt rating, integrated body diode with 65–80 ns t_rr, and thermal resistance of 0.3–0.5 K/W junction-to-case - critical for high-current power stage design.

Technical Context

This OptiMOS™ power transistor uses trench-gate silicon technology to achieve low conduction loss and fast switching performance. Its gate threshold voltage (1.2–2.0 V) enables direct drive from 3.3 V or 5 V logic controllers, and its 166–220 nC total gate charge supports efficient PWM operation up to several hundred kHz.

The device integrates a robust intrinsic body diode with 87–108 nC Q_rr and 1.0–1.3 V V_SD at 80 A, enabling reliable synchronous rectification and freewheeling in buck, half-bridge, and motor drive topologies without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V and 24 V automotive and industrial bus applications
R_DS(on) @ V_GS = 4.5 V	2.3–3.5 mΩ - Enables <1 W conduction loss at 80 A, reducing heatsink requirements
I_D (continuous)	80 A @ T_C = 25 °C - Supports high-current output stages in server VRMs and EV chargers
E_AS	810 mJ - Withstands single-pulse inductive energy without failure in hard-switched circuits
dv/dt rating	6 kV/µs - Ensures immunity to parasitic turn-on in high-speed, high-dV/dt environments
T_j max	175 °C - Allows operation in under-hood or enclosed industrial enclosures without derating
Q_g	166–220 nC - Determines gate driver power requirement and switching loss trade-off

Pinout & Package

SPB80N03S2L-03 is housed in a surface-mount TO263-3 (D²PAK) package with exposed drain pad for thermal management. The package has three terminals: Gate (G), Drain (D), and Source (S), with Drain electrically connected to the large copper tab on the underside.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives logic-level voltage (≥4.5 V) to fully enhance channel; requires <2.5 Ω series gate resistor for optimal switching
Drain (D)	High-side current path	Connected to PCB copper pour (≥6 cm²) for thermal dissipation; electrically tied to package tab
Source (S)	Reference node / return path	Serves as common reference for gate drive and current sensing; must be low-inductance layout

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Operates fully enhanced at V_GS = 4.5 V, eliminating need for gate boosters in 3.3 V/5 V systems
Optimized FOM (Q_g × R_DS(on))	~0.5 nC·mΩ - Balances switching loss and conduction loss for high-frequency DC-DC efficiency
Avalanche-rated ruggedness	810 mJ single-pulse E_AS - Eliminates need for external snubbers in inductive load switching
Low thermal resistance	R_thJC = 0.3–0.5 K/W - Enables >250 W power handling with moderate heatsinking
High dv/dt immunity	6 kV/µs - Prevents false triggering during fast voltage transients in motor drives and inverters

Applications

Automotive DC-DC Converters

Server Voltage Regulator Modules (VRMs)

Use Scenario: 12 V to 1 V/3.3 V step-down conversion in ADAS ECUs and infotainment head units.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter, switching at 500 kHz–1 MHz.

Use Value: Low R_DS(on) at 4.5 V drive reduces conduction loss by >30% vs. standard MOSFETs, improving efficiency at light load.

Use Scenario: Core power delivery for Intel/AMD CPUs in cloud servers and AI accelerators.

IC Role / Device Role / Timing Role: Bottom-side switch in interleaved buck phase-leg, operating with tight gate timing control.

Use Value: 175 °C T_j rating allows sustained 80 A operation under airflow-limited rack conditions.

Industrial Motor Drives

EV On-Board Chargers (OBC)

Use Scenario: Half-bridge output stage for 200–500 W BLDC motor control in HVAC blowers and pumps.

IC Role / Device Role / Timing Role: Low-side switch with integrated body diode conducting freewheeling current during PWM off-time.

Use Value: 65–80 ns reverse recovery time minimizes diode switching loss and EMI generation.

Use Scenario: Secondary-side synchronous rectification in 3.3 kW AC/DC OBC LLC resonant converters.

IC Role / Device Role / Timing Role: Output rectifier in full-wave synchronous configuration, driven by isolated gate signals.

Use Value: 810 mJ E_AS withstands repetitive inductive kickback from transformer leakage inductance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF8720PbF	R_DS(on) = 4.0 mΩ @ 4.5 V; Q_g = 21 nC; TO-220 package	Higher R_DS(on) and lower current rating (60 A); not SMD	Preferred where through-hole mounting and lower gate charge are prioritized over thermal performance
STL220N3LLH6	R_DS(on) = 2.0 mΩ @ 4.5 V; 100 A rating; PowerFLAT 8x8 package	Lower R_DS(on) but smaller thermal pad area; no exposed drain tab	Selected when board space is constrained and peak efficiency at 40–60 A is critical

Compared with IRF8720PbF and STL220N3LLH6, SPB80N03S2L-03 delivers superior thermal dissipation via its D²PAK drain tab and balanced FOM for 80 A continuous operation - making it optimal for thermally demanding, high-reliability power stages where junction temperature control is critical.

Availability

SPB80N03S2L-03 is available at Aetrix Electronics and suitable for automotive DC-DC converters, server VRMs, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for SPB80N03S2L-03 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS™ 30 V product line, engineered specifically for high-current, high-efficiency power conversion in automotive, computing, and industrial applications where low R_DS(on) at logic-level gate drive is essential.

FAQ

What is the maximum safe operating temperature for SPB80N03S2L-03?

The device is rated for junction temperatures from –55 °C to +175 °C. Its absolute maximum T_j is 175 °C, and thermal derating begins above T_C = 25 °C per the P_tot vs. T_C curve on page 4 of the datasheet. Sustained operation at 175 °C requires careful PCB thermal design with ≥6 cm² copper cooling area.

Does SPB80N03S2L-03 require a gate driver IC?

It can be driven directly by 3.3 V or 5 V microcontrollers due to its logic-level threshold (V_GS(th) = 1.2–2.0 V), but a dedicated gate driver is recommended for >100 kHz switching to ensure fast turn-on/turn-off and minimize switching losses. Peak gate current should exceed 2 A for optimal dV/dt control.

Is the body diode suitable for continuous freewheeling current?

Yes - the intrinsic body diode supports 80 A continuous forward current at T_C = 25 °C and 320 A pulsed, with 1.0–1.3 V forward voltage at 80 A. Its 65–80 ns reverse recovery time and 87–108 nC Q_rr make it suitable for synchronous rectification, though external Schottky diodes may be preferred in ultra-high-frequency designs.

How does SPB80N03S2L-03 differ from SPP80N03S2L-03?

SPB80N03S2L-03 uses the TO263-3 (D²PAK) surface-mount package with exposed drain tab, while SPP80N03S2L-03 is in TO220-3 through-hole package. Both share identical electrical specs, but SPB offers superior thermal performance in SMT layouts and higher power density; SPP provides mechanical robustness and easier prototyping.

SPB80N03S2L-03 G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 220 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8180 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB80N03S2L-03 G FAQ

1.How can I place an order for SPB80N03S2L-03 G through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB80N03S2L-03 G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB80N03S2L-03 G reliable?

The price and inventory of SPB80N03S2L-03 G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB80N03S2L-03 G is usually 5 days.

3.What payment methods are accepted for SPB80N03S2L-03 G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB80N03S2L-03 G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB80N03S2L-03 G?

SPB80N03S2L-03 G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB80N03S2L-03 G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB80N03S2L-03 G?

For technical support, including SPB80N03S2L-03 G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB80N03S2L-03 G requirements.

6.How does Aetrix verify that SPB80N03S2L-03 G is sourced from the original manufacturer or authorized distributors?

All SPB80N03S2L-03 G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB80N03S2L-03 G meets industry standards.

7.What is the process for return or replacement of SPB80N03S2L-03 G?

All SPB80N03S2L-03 G units undergo pre-shipment inspection (PSI). If there is an issue with SPB80N03S2L-03 G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB80N03S2L-03 G part is unused and in its original packaging.

Return procedure for SPB80N03S2L-03 G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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