Infineon Technologies ISK057N04LM6ATLA1

Overview

ISK057N04LM6ATLA1 from Infineon Technologies is an N-channel logic-level OptiMOS™ 6 power MOSFET rated for 40 V V_DS, with a maximum R_DS(on) of 5.75 mΩ at V_GS = 10 V, 64 A continuous drain current (T_C = 25 °C), and PG-VSON-6 package with exposed drain tab. It serves as a high-efficiency synchronous rectifier or main switch in DC-DC converters for server VRMs and POL modules.

For engineers reviewing the ISK057N04LM6ATLA1 datasheet, ISK057N04LM6ATLA1 pinout, ISK057N04LM6ATLA1 application, or ISK057N04LM6ATLA1 equivalent, key selection criteria include its 5.75 mΩ on-resistance at 10 V gate drive, 11 nC Q_OSS, 9.7 nC total gate charge, thermal resistance R_thJC of 1.6 °C/W, and 100% avalanche-tested ruggedness under industrial conditions.

Technical Context

This device implements a trench-based silicon MOSFET architecture optimized for low conduction and switching losses in high-frequency synchronous buck topologies. Its gate threshold voltage (1.3–2.3 V) enables direct logic-level drive from 3.3 V or 5 V controllers, while the integrated body diode supports reverse recovery in hard-switched applications.

The PG-VSON-6 package features a bottom-side thermal pad and fused pins 1/2/5/6 connected to drain, enabling efficient heat transfer to PCB copper. The 2×2 mm footprint delivers industry-leading power density, validated per JEDEC JESD47 for industrial temperature range (−55 to +150 °C).

Key Specifications

Pinout & Package

Package: PG-VSON-6 (2.0 mm × 2.0 mm × 0.55 mm), thermally enhanced with exposed drain paddle on underside. Pin 4 is source; pins 1, 2, 5, 6 and the tab are internally fused to drain; pin 3 is gate.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLHS6242PBF and DMTH4007LPSQ-13, ISK057N04LM6ATLA1 offers the lowest thermal resistance and smallest footprint among 40 V MOSFETs with sub-6 mΩ R_DS(on), making it optimal for space-constrained, thermally aggressive POL and VRM designs where board area and junction temperature are primary constraints.

Availability

ISK057N04LM6ATLA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and automotive ADAS power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for ISK057N04LM6ATLA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and qualification infrastructure aligned to ISO/TS 16949 and IATF 16949 standards.

This device belongs to the OptiMOS™ 6 product line-designed specifically for high-efficiency, high-density power conversion in datacenter, industrial, and automotive applications demanding low R_DS(on), fast switching, and robust thermal performance in miniature packages.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The ISK057N04LM6ATLA1 supports 40 A continuous drain current at T_C = 100 °C with V_GS = 10 V, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the PG-VSON-6 package and ensures safe operation under sustained high-power conditions without exceeding 150 °C junction temperature.

Does this MOSFET require a gate resistor for typical 1 MHz switching?

No external gate resistor is required for stability at 1 MHz due to its intrinsic gate resistance of 0.7–1.2 Ω and low gate charge (9.7 nC). However, a 1–2 Ω series resistor is recommended to dampen potential ringing caused by PCB trace inductance and improve EMI performance in high-dI/dt applications.

How is the drain tab electrically connected in the PG-VSON-6 package?

The exposed drain tab is internally fused to pins 1, 2, 5, and 6 - all five terminals form a single drain node. The tab must be soldered to a dedicated PCB copper pour connected to the system's high-current drain net and thermal ground plane to achieve the specified R_thJC = 1.6 °C/W.

Is the body diode suitable for synchronous rectification in continuous conduction mode?

Yes - the integrated body diode has a typical forward voltage of 0.84 V at 20 A and reverse recovery charge (Q_RR) of 29–64 nC depending on di/dt. Its fast trr (16–96 ns) and low Q_RR make it suitable for synchronous rectification in CCM buck converters up to 1 MHz, especially when paired with adaptive gate timing control.