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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
AUIRFR3607TRL MOSFET N-CH 75V 80A DPAK Infineon Technologies	9,357	RFQ	Datasheet	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	75 V	56A (Tc)	-	9mOhm @ 46A, 10V	4V @ 100µA	84 nC @ 10 V	-	3070 pF @ 50 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)
IRF530NS MOSFET N-CH 100V 17A D2PAK Infineon Technologies	2,329	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	17A (Tc)	10V	90mOhm @ 9A, 10V	4V @ 250µA	37 nC @ 10 V	±20V	920 pF @ 25 V	-	3.8W (Ta), 70W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRL520NL MOSFET N-CH 100V 10A TO262 Infineon Technologies	2,871	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	10A (Tc)	4V, 10V	180mOhm @ 6A, 10V	2V @ 250µA	20 nC @ 5 V	±16V	440 pF @ 25 V	-	3.8W (Ta), 48W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRLI520N MOSFET N-CH 100V 8.1A TO220AB FP Infineon Technologies	3,602	RFQ	Datasheet	HEXFET®	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	8.1A (Tc)	4V, 10V	180mOhm @ 6A, 10V	2V @ 250µA	20 nC @ 5 V	±16V	440 pF @ 25 V	-	30W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-FP
IPP045N10N3GHKSA1 MOSFET N-CH 100V 100A TO220-3 Infineon Technologies	5,989	RFQ	Datasheet	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	100A (Tc)	6V, 10V	4.5mOhm @ 100A, 10V	3.5V @ 150µA	117 nC @ 10 V	±20V	8410 pF @ 50 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3
IRF7821TR MOSFET N-CH 30V 13.6A 8SO Infineon Technologies	4,245	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	13.6A (Ta)	4.5V, 10V	9.1mOhm @ 13A, 10V	1V @ 250µA	14 nC @ 4.5 V	±20V	1010 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 155°C (TJ)	-	-	Surface Mount	8-SOIC
IRF2805STRRPBF MOSFET N-CH 55V 135A D2PAK Infineon Technologies	9,445	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	135A (Tc)	10V	4.7mOhm @ 104A, 10V	4V @ 250µA	230 nC @ 10 V	±20V	5110 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRFSL4410ZPBF MOSFET N-CH 100V 97A TO262 Infineon Technologies	6,786	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	97A (Tc)	10V	9mOhm @ 58A, 10V	4V @ 150µA	120 nC @ 10 V	±20V	4820 pF @ 50 V	-	230W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRFU2905Z MOSFET N-CH 55V 42A IPAK Infineon Technologies	9,566	RFQ	Datasheet	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	42A (Tc)	10V	14.5mOhm @ 36A, 10V	4V @ 250µA	44 nC @ 10 V	±20V	1380 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK (TO-251AA)
SPB100N03S2-03 G MOSFET N-CH 30V 100A TO263-3 Infineon Technologies	9,469	RFQ	Datasheet	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	30 V	100A (Tc)	10V	3mOhm @ 80A, 10V	4V @ 250µA	150 nC @ 10 V	±20V	7020 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3-2

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