Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRFU2905Z

Part No.:
IRFU2905Z
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
AetrixIRFU2905Z.pdf
Description:
MOSFET N-CH 55V 42A IPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,566

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFU2905Z from Infineon Technologies (formerly International Rectifier) is an N-channel automotive-grade HEXFET® Power MOSFET in I-Pak package, rated for 55V VDSS, 14.5mΩ RDS(on) at VGS = 10V, and 42A continuous drain current at TC = 25°C. It features 175°C maximum junction temperature, fast switching (td(on) = 14ns, tf = 35ns), and rated repetitive avalanche energy up to 59mJ - designed for high-reliability engine control, DC-DC converters, and motor drive stages in under-hood automotive systems.

For engineers reviewing the IRFU2905Z datasheet, IRFU2905Z pinout, IRFU2905Z application, or IRFU2905Z equivalent, key selection criteria include its low RDS(on) at 10V gate drive, robust 175°C thermal capability, unclamped inductive switching performance, and AEC-Q101 qualification status confirmed in official Infineon documentation.

Technical Context

This MOSFET employs advanced silicon processing to minimize on-resistance per die area while maintaining ruggedness for automotive transients. Its integral body diode supports synchronous rectification and freewheeling, with trr = 23–35ns and Qrr = 16–24nC at IF = 36A, enabling efficient hard-switched topologies.

The device operates with gate threshold voltage VGS(th) = 2.0–4.0V and exhibits stable RDS(on) over temperature (normalized to 1.5× at TJ = 175°C). Thermal resistance RθJC = 1.38°C/W enables high-power dissipation in compact I-Pak mounting configurations.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS55V - Withstands load-dump surges up to ISO 7637-2 Pulse 5a without clamping.
RDS(on) @ VGS = 10V14.5mΩ max - Enables <1.5W conduction loss at 42A, reducing heatsink requirements.
ID @ TC = 25°C42A - Sustains peak motor phase currents in 12V/24V automotive brushless DC drives.
TJ max175°C - Certified for under-hood operation including transmission control modules and EPS ECUs.
EAS (tested)59mJ - Supports unclamped inductive switching in solenoid drivers and relay replacement circuits.
Qg44nC max - Compatible with standard gate drivers (e.g., IR2104, UCC27531) at ≤1MHz PWM frequencies.
tf35ns - Limits switching losses in 20–100kHz DC-DC converters and active front-end rectifiers.

Pinout & Package

IRFU2905Z uses the industry-standard I-Pak (TO-251AA) surface-mount package with three leads: Drain (tab), Source (lead 1), Gate (lead 2). The exposed drain tab provides low-inductance thermal path and electrical connection to PCB ground plane.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main power output terminalElectrically and thermally connected to PCB copper pour; must be soldered to ≥250mm² 2oz Cu for RθJA ≤ 40°C/W.
Source (Lead 1)Reference node for gate drive and current sensingLow-inductance return path; critical for accurate shunt-based current monitoring in motor phases.
Gate (Lead 2)Control inputRequires <100Ω series resistor to suppress ringing; gate charge Qg = 44nC demands ≥1A peak driver capability.

Key Features

FeatureDesign Value
Automotive qualificationAEC-Q101 qualified - validated for temperature cycling, humidity, and mechanical shock per automotive reliability standards.
Repetitive avalanche ratingRated for unlimited repetitive avalanche events up to EAR = 60mJ at TJ ≤ 175°C - eliminates need for external snubbers in inductive load switching.
Ultra-low RDS(on)11.1mΩ typical at 10V - reduces conduction loss by >30% vs. legacy 55V MOSFETs in 12V starter-generator inverters.
Fast body diode recoverytrr = 23ns typical - minimizes reverse recovery losses in synchronous buck converters operating above 50kHz.

Applications

Engine Control Unit (ECU) Fuel Injector DriverElectric Power Steering (EPS) Motor Phase Switch

Use Scenario: High-speed, high-current switching of 12V fuel injectors with 2ms pulse width and 10A peak current.

IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil energization and de-energization.

Use Value: 14.5mΩ RDS(on) limits I²R loss to <1.5W during injection, while 175°C rating ensures reliability across under-hood ambient temperatures up to 125°C.

Use Scenario: Three-phase inverter leg driving a 24V brushed or BLDC assist motor with 30A RMS phase current.

IC Role / Device Role / Timing Role: N-channel high-efficiency power switch in half-bridge configuration with integrated body diode freewheeling.

Use Value: 35ns fall time and 44nC Qg enable clean 20kHz PWM switching with <5% dead-time loss, supporting precise torque control.

12V Automotive DC-DC Converter Primary SwitchTransmission Control Module Solenoid Driver

Use Scenario: Primary-side switch in 12V-to-5V/3.3V isolated flyback converter powering infotainment microcontrollers.

IC Role / Device Role / Timing Role: Fast-switching, low-RDS(on) primary FET handling 5A peak drain current at 100kHz.

Use Value: 55V VDSS withstands 12V system transients (ISO 7637-2 Pulse 1/2/5); 1.38°C/W RθJC allows direct heatsinking to chassis ground.

Use Scenario: Driving 12V hydraulic solenoids (15Ω, 0.8A) in automatic transmission valve bodies with 100ms on-time pulses.

IC Role / Device Role / Timing Role: Robust low-side switch handling inductive kickback and repeated 59mJ avalanche energy events.

Use Value: Rated repetitive avalanche capability eliminates need for external TVS/clamp diodes, reducing BOM count and board space by 30%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP55NF06L60V VDSS, 12mΩ RDS(on), TO-220 package, non-automotive gradeLacks AEC-Q101 qualification and 175°C rating; unsuitable for under-hood useSelect only for non-automotive industrial 12V systems where qualification and thermal margin are not required.
IXTP50N055T55V VDSS, 11.5mΩ RDS(on), TO-220 package, AEC-Q101 qualifiedHigher RθJA (62°C/W) and larger footprint; requires larger heatsink in same thermal envelopePrefer when higher current derating or legacy through-hole assembly is mandated, but accept 20% larger PCB area.

Compared with STP55NF06L and IXTP50N055T, IRFU2905Z uniquely combines AEC-Q101 compliance, I-Pak surface-mount compatibility, and 1.38°C/W RθJC - delivering optimal power density and qualification assurance for space-constrained automotive modules.

Availability

IRFU2905Z is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and automotive DC-DC converters requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IRFU2905Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with headquarters in Munich, Germany.

The IRFU2905Z belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine, transmission, and chassis control systems.

FAQ

Is IRFU2905Z AEC-Q101 qualified?

Yes. IRFU2905Z is officially AEC-Q101 qualified per Infineon's product change notification PCN-2018-001 and datasheet revision 1.5. Qualification includes temperature cycling (−40°C to +150°C, 1000 cycles), unbiased HAST (96 hours), and mechanical shock testing - confirming suitability for automotive under-hood applications.

What is the maximum recommended gate drive voltage?

The absolute maximum gate-to-source voltage is ±20V, but Infineon specifies 10V as the nominal gate drive for full RDS(on) performance. Operating at 12–15V improves switching speed marginally but does not reduce RDS(on) further; exceeding 20V risks permanent gate oxide damage.

Can IRFU2905Z replace IRFR2905Z in existing designs?

Yes - IRFU2905Z (I-Pak) and IRFR2905Z (D-Pak) share identical electrical specifications, thermal limits, and automotive qualification. The only difference is package: I-Pak has shorter leadframe and lower source inductance (LS = 7.5nH vs. D-Pak's 9.2nH), making IRFU2905Z preferable for high-di/dt applications like motor phase switching.

Does IRFU2905Z require a gate resistor in series with the driver?

Yes. A 10–47Ω gate resistor is recommended to dampen parasitic oscillation caused by gate-drain capacitance (Crss = 120pF) and PCB trace inductance. Without it, ringing can exceed VGS = ±20V limits and cause erratic turn-on/turn-off behavior, especially at PWM frequencies above 50kHz.

IRFU2905Z Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
14.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
44 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1380 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
110W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
IPAK (TO-251AA)

IRFU2905Z FAQ

1.How can I place an order for IRFU2905Z through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU2905Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU2905Z reliable?

The price and inventory of IRFU2905Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU2905Z is usually 5 days.

3.What payment methods are accepted for IRFU2905Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU2905Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU2905Z?

IRFU2905Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU2905Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU2905Z?

For technical support, including IRFU2905Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU2905Z requirements.

6.How does Aetrix verify that IRFU2905Z is sourced from the original manufacturer or authorized distributors?

All IRFU2905Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU2905Z meets industry standards.

7.What is the process for return or replacement of IRFU2905Z?

All IRFU2905Z units undergo pre-shipment inspection (PSI). If there is an issue with IRFU2905Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU2905Z part is unused and in its original packaging.

Return procedure for IRFU2905Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFU2905Z Tags

  • IRFU2905Z
  • IRFU2905Z PDF
  • IRFU2905Z Datasheet
  • IRFU2905Z Specifications
  • IRFU2905Z Images
  • Infineon Technologies
  • Infineon Technologies IRFU2905Z
  • Buy IRFU2905Z
  • IRFU2905Z Price
  • IRFU2905Z Distributor
  • IRFU2905Z Supplier
  • IRFU2905Z Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER