Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF530NS

Name: IRF530NS
Brand: Infineon Technologies
SKU: IRF530NS
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF530NS

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF530NS.pdf

Description:: MOSFET N-CH 100V 17A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,329

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF530NS from Infineon Technologies (formerly International Rectifier) is a surface-mount N-channel enhancement-mode HEXFET® Power MOSFET rated for 100 V drain-source breakdown voltage, 90 mΩ R_DS(on) at V_GS = 10 V and I_D = 9.0 A, and 17 A continuous drain current at T_C = 25°C. It delivers fast switching (t_r = 22 ns, t_f = 25 ns), full avalanche rating (E_AS = 340 mJ), and operates up to 175°C junction temperature - deployed in DC-DC converters, motor drives, and power supply primary-side switching.

For engineers reviewing the IRF530NS datasheet, IRF530NS pinout, IRF530NS application, or IRF530NS equivalent, key selection criteria include verified R_DS(on) at 10 V gate drive, D2Pak thermal resistance (R_θJC = 2.15 °C/W), repetitive avalanche capability (I_AR = 9.0 A), and body diode recovery performance (t_rr = 93–140 ns, Q_rr = 320–480 nC).

Technical Context

This device uses advanced silicon processing to minimize on-resistance per die area while maintaining ruggedness against voltage transients and thermal stress. Its D2Pak package enables high-current handling with low internal connection resistance and 2.0 W typical surface-mount power dissipation.

The MOSFET features a fully rated unclamped inductive switching (UIS) capability, gate charge profile optimized for 10 V drive (Q_g = 37 nC, Q_gd = 11 nC), and body diode with V_SD = 1.3 V at I_S = 9.0 A and T_J = 25°C - critical for synchronous rectification and freewheeling paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - maximum blocking voltage before avalanche onset; supports 48 V and 60 V bus systems with margin.
R_DS(on)	90 mΩ @ V_GS = 10 V, I_D = 9.0 A - determines conduction loss in high-current switch nodes.
I_D (continuous)	17 A @ T_C = 25°C - usable in PCB-mounted heatsink applications without forced air.
E_AS	340 mJ - single-pulse avalanche energy rating; enables robust operation under inductive load turn-off.
t_r/t_f	22 ns / 25 ns - fast edge rates reduce switching losses in hard-switched topologies up to ~200 kHz.
Q_g	37 nC - total gate charge defines driver strength requirement for 10 V gate drive.
R_θJC	2.15 °C/W - junction-to-case thermal resistance enables direct heatsinking via PCB copper or external metal tab.

Pinout & Package

The IRF530NS is housed in a D2Pak (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. The package measures 10.67 mm × 9.65 mm × 4.83 mm and supports reflow soldering per IPC-J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Exposed metal tab electrically connected to drain; must be soldered to large copper pour for thermal and current conduction.
Source	Reference node for gate control and current return	Low-inductance source connection critical for minimizing switching oscillation and gate loop noise.
Gate	Control electrode for channel formation	High-impedance input requiring <100 nA leakage; sensitive to ESD and requires series gate resistor for dV/dt control.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	90 mΩ enables <1.5 W conduction loss at 12 A, reducing heatsink requirements in compact power stages.
Full avalanche rating	Rated for repetitive unclamped inductive switching (I_AR = 9.0 A, E_AS = 340 mJ) - eliminates need for external snubbers in flyback or buck-boost designs.
Fast body diode	t_rr = 93 ns and Q_rr = 320 nC support efficient freewheeling in synchronous and quasi-resonant topologies.
High-temperature operation	175°C max junction temperature allows reliable operation in sealed enclosures or high-ambient industrial environments.

Applications

DC-DC Converter Primary Switch

Motor Drive Half-Bridge

Use Scenario: High-efficiency 48 V input buck converter delivering 12 V/10 A to embedded control modules.

IC Role / Device Role / Timing Role: Main high-side switching element operating at 100–200 kHz with 10 V gate drive.

Use Value: 90 mΩ R_DS(on) limits conduction loss to ≤1.1 W at full load, enabling natural convection cooling.

Use Scenario: 24 V brushed DC motor driver with PWM-controlled direction and speed.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, commutated at ≤20 kHz.

Use Value: Fast t_f = 25 ns and low Q_gd = 11 nC reduce shoot-through risk and gate drive power demand.

AC-DC Adapter Flyback Switch

LED Driver Constant-Current Switch

Use Scenario: 65 W universal-input offline flyback SMPS powering consumer electronics.

IC Role / Device Role / Timing Role: Primary-side power switch subjected to repetitive avalanche during transformer reset.

Use Value: Fully rated E_AS = 340 mJ ensures reliability across line-voltage transients without derating.

Use Scenario: High-brightness LED string driver with analog dimming and overcurrent protection.

IC Role / Device Role / Timing Role: Series-pass current regulator switched at 1–10 kHz for thermal management.

Use Value: 175°C T_J(max) and low R_DS(on) allow stable current regulation in thermally constrained lamp housings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF10	R_DS(on) = 100 mΩ @ 10 V; V_DSS = 100 V; Q_g = 25 nC	Lower gate charge reduces driver complexity but higher on-resistance increases conduction loss.	Prefer when gate drive is weak or cost-sensitive; avoid in high-current (>12 A) continuous duty.
IXTP12N10D2	R_DS(on) = 110 mΩ @ 10 V; TO-220 package; R_θJA = 62 °C/W (PCB mounted)	Through-hole mounting and higher thermal resistance limit power density vs. D2Pak.	Select only when through-hole assembly is mandated or when lower gate charge (Q_g = 22 nC) is prioritized over thermal performance.

Compared with STP16NF10 and IXTP12N10D2, the IRF530NS offers superior thermal performance (R_θJC = 2.15 °C/W) and balanced switching/conduction trade-offs - making it optimal for space-constrained, high-reliability surface-mount power stages where both efficiency and ruggedness are required.

Availability

IRF530NS is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and AC-DC adapters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF530NS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line was developed to deliver ultra-low on-resistance, fast switching, and rugged avalanche performance for high-efficiency power conversion in industrial, computing, and consumer applications.

FAQ

Is IRF530NS lead-free and RoHS-compliant?

Yes. The "PbF" suffix in IRF530NSPbF confirms compliance with RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 3 marking. Lead-free reflow profiles follow IPC-J-STD-020D, with peak temperature ≤260°C for 10 seconds.

What is the recommended gate resistor value for IRF530NS in a 100 kHz buck converter?

A 10 Ω to 22 Ω series gate resistor is recommended to balance switching speed (t_r/t_f ≈ 22/25 ns) and gate ringing suppression. Lower values increase dV/dt stress; higher values raise switching losses - verify with actual layout parasitics and driver capability.

Can IRF530NS replace IRF530NLPbF in a design?

Yes, with mechanical adaptation. IRF530NS (D2Pak) and IRF530NLPbF (TO-262) share identical electrical specs (V_DSS, R_DS(on), I_D, Q_g). However, D2Pak offers lower R_θJC (2.15 vs. 2.5 °C/W) and higher power density - redesign PCB footprint and thermal pad layout accordingly.

Does IRF530NS require a gate driver IC or can it be driven directly from a microcontroller?

Direct MCU drive is not recommended. With Q_g = 37 nC and typical 20 mA GPIO current limit, rise/fall times would exceed 1.8 µs - causing excessive switching loss. A dedicated gate driver (e.g., TC4427, MIC4422) is required for sub-50 ns transitions and robust 10 V gate voltage.

IRF530NS Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 90mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 37 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 920 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 70W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF530NS FAQ

1.How can I place an order for IRF530NS through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF530NS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF530NS reliable?

The price and inventory of IRF530NS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF530NS is usually 5 days.

3.What payment methods are accepted for IRF530NS?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF530NS transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF530NS?

IRF530NS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF530NS order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF530NS?

For technical support, including IRF530NS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF530NS requirements.

6.How does Aetrix verify that IRF530NS is sourced from the original manufacturer or authorized distributors?

All IRF530NS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF530NS meets industry standards.

7.What is the process for return or replacement of IRF530NS?

All IRF530NS units undergo pre-shipment inspection (PSI). If there is an issue with IRF530NS, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF530NS part is unused and in its original packaging.

Return procedure for IRF530NS:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…