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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB100N03S2-03 G

Name: SPB100N03S2-03 G
Brand: Infineon Technologies
SKU: SPB100N03S2-03 G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB100N03S2-03 G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB100N03S2-03 G.pdf

Description:: MOSFET N-CH 30V 100A TO263-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPB100N03S2-03G from Infineon Technologies is an N-channel enhancement-mode power MOSFET in TO263-3 (D²PAK) package, rated for 30 V V_DS, 100 A continuous drain current at T_C = 25 °C, and 2.5 mΩ typical R_DS(on) at V_GS = 10 V and I_D = 80 A. It supports 175 °C operation, is avalanche-rated (E_AS = 810 mJ), and features dV/dt ruggedness up to 6 kV/µs - deployed in high-current DC-DC output stages and motor phase switches.

For engineers reviewing the SPB100N03S2-03G datasheet, SPB100N03S2-03G pinout, SPB100N03S2-03G application, or SPB100N03S2-03G equivalent, key selection criteria include R_DS(on) at 100 A load, thermal resistance (R_thJC = 0.3–0.5 K/W), gate charge (Q_g = 113–150 nC), and reverse diode forward voltage (V_SD = 0.9–1.3 V at 100 A).

Technical Context

This MOSFET uses Infineon's OptiMOS™ T2 process optimized for low R_DS(on) × Q_g figure-of-merit (FOM), enabling high-efficiency switching in synchronous rectification and half-bridge topologies. Its 3 mΩ max R_DS(on) and 5300–7020 pF C_iss support fast turn-on with controlled EMI.

The device integrates a robust body diode with t_rr = 79–100 ns and Q_rr = 109–136 nC, enabling reliable freewheeling in hard-switched converters. Thermal design is enabled by its low junction-to-case resistance and 175 °C maximum operating temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	30 V - supports 24 V nominal bus systems with margin for transients and ripple
R_DS(on) max	3 mΩ at V_GS = 10 V, I_D = 80 A - enables <1.5 W conduction loss at 100 A
I_D Continuous	100 A at T_C = 25 °C - requires heatsink or PCB copper area ≥6 cm² for sustained operation
E_AS	810 mJ single-pulse avalanche energy - withstands inductive turn-off stress without external snubber
dV/dt Rating	6 kV/µs - immune to false triggering in noisy high-dV/dt environments like motor drives
Q_g	113–150 nC - determines gate driver power requirement and switching speed trade-off
V_SD	0.9–1.3 V at I_F = 100 A - defines freewheeling loss during dead-time in synchronous buck converters

Pinout & Package

Package: TO263-3 (D²PAK), surface-mount, isolated drain tab. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V logic-level drive; threshold 2.1–4 V; requires <150 nC charge for full enhancement
Pin 2 (Drain)	High-side or low-side power path	Exposed copper tab - must be soldered to ≥6 cm² PCB copper for thermal performance; electrically connected to drain
Pin 3 (Source)	Reference node for gate drive and current sensing	Low-inductance return path; used for Kelvin source sensing in precision current monitoring designs

Key Features

Feature	Design Value
N-channel enhancement mode	Zero conduction when V_GS = 0 V - enables fail-safe off-state in power-up sequencing
Optimized FOM (Q_g × R_DS(on))	~375 nC·mΩ - reduces combined switching + conduction losses in 100–500 kHz SMPS
175 °C operating temperature	Enables use in sealed enclosures or high-ambient industrial environments without derating
Avalanche rated	Guaranteed single-pulse energy handling (810 mJ) - eliminates need for external clamping in inductive loads
Halogen-free construction	Complies with IEC61249-2-21 - meets RoHS and automotive material compliance requirements

Applications

Motor Drive Inverter

Server VRM Output Stage

Use Scenario: Half-bridge leg in 24 V BLDC motor controller driving 5–10 kW fans or pumps.

IC Role / Device Role / Timing Role: Low-side switch with synchronous rectification; handles 100 A peak phase current at 20 kHz PWM.

Use Value: 2.5 mΩ R_DS(on) limits conduction loss to ≤25 W per device; 175 °C rating sustains operation under forced-air-limited cooling.

Use Scenario: High-current output FET in 48 V to 12 V intermediate bus converter for AI server racks.

IC Role / Device Role / Timing Role: Primary synchronous rectifier in multiphase buck topology; switched at 300–500 kHz.

Use Value: Low Q_g/R_DS(on) FOM minimizes total loss; 6 cm² PCB copper mounting achieves <0.5 K/W effective R_thJA.

Industrial UPS Inverter

EV Onboard Charger (OBC) DC-Link Switch

Use Scenario: Bidirectional 30 V DC-AC inverter stage in 3 kVA uninterruptible power supply.

IC Role / Device Role / Timing Role: High-current switching element in H-bridge; subjected to repetitive avalanche during grid sync transitions.

Use Value: 810 mJ E_AS and 6 kV/µs dV/dt rating prevent failure during line disturbance events.

Use Scenario: DC-link switching FET in 6.6 kW OBC PFC + LLC stage operating at 400 V bus.

IC Role / Device Role / Timing Role: Low-voltage auxiliary switch for clamp or soft-start circuitry tied to 30 V rail.

Use Value: Robust body diode (t_rr = 79 ns, Q_rr = 109 nC) ensures clean commutation with minimal voltage overshoot.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL100N03L	R_DS(on) = 3.2 mΩ max; Q_g = 130 nC; no specified avalanche rating	Lacks guaranteed E_AS and dV/dt rating - unsuitable for inductive hard-switching	Select only for low-stress, low-frequency linear or resistive loads
STP100N3LLH6	R_DS(on) = 2.8 mΩ max; T_jmax = 175 °C; Q_g = 125 nC; E_AS = 720 mJ	Slightly lower avalanche energy and higher R_DS(on) - marginal in high-reliability motor control	Acceptable where 10% higher conduction loss and 11% lower E_AS are tolerable

Compared with IRL100N03L and STP100N3LLH6, SPB100N03S2-03G delivers superior avalanche ruggedness and lower R_DS(on), making it preferred for mission-critical 100 A switching in motor drives and UPS inverters where transient immunity and thermal headroom are design constraints.

Availability

SPB100N03S2-03G is available at Aetrix Electronics and suitable for motor drive inverters, server VRM output stages, industrial UPS systems, and EV onboard charger auxiliary circuits requiring stable component supply and long-term production continuity.

Supply support for SPB100N03S2-03G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The OptiMOS™ product line targets high-efficiency power conversion with ultra-low R_DS(on) and optimized gate charge for 20–100 V applications in computing, industrial, and e-mobility systems.

FAQ

What is the maximum safe operating temperature for SPB100N03S2-03G?

The device is rated for continuous operation up to T_j = 175 °C, verified per JEDEC JESD22-A108. Derating begins above T_C = 120 °C per the ID vs. TC curve on page 4 of the datasheet. At T_C = 100 °C, continuous current drops to ~65 A with V_GS ≥ 10 V.

Does SPB100N03S2-03G require a gate resistor for stability?

Yes - a series gate resistor (typically 2.2 Ω, as used in the td(on)/td(off) test conditions) is recommended to dampen ringing and limit peak gate current. The device's 150 nC Q_g and 5.6 V plateau voltage make it sensitive to fast edge rates without proper gate control.

Can SPB100N03S2-03G be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (see page 9 R_DS(on) vs. T_j) enables current sharing across paralleled units. Use matched layout, Kelvin source connections, and individual gate resistors to ensure balanced dynamic current distribution.

Is the drain tab electrically isolated from the PCB mounting plane?

No - the exposed drain tab (Pin 2) is internally connected to the MOSFET's drain and must be electrically isolated from other nets via insulating thermal pad or dielectric coating if mounted to a grounded heatsink. The TO263-3 package has no internal isolation.

SPB100N03S2-03 G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7020 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB100N03S2-03 G FAQ

1.How can I place an order for SPB100N03S2-03 G through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB100N03S2-03 G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB100N03S2-03 G reliable?

The price and inventory of SPB100N03S2-03 G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB100N03S2-03 G is usually 5 days.

3.What payment methods are accepted for SPB100N03S2-03 G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB100N03S2-03 G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB100N03S2-03 G?

SPB100N03S2-03 G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB100N03S2-03 G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB100N03S2-03 G?

For technical support, including SPB100N03S2-03 G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB100N03S2-03 G requirements.

6.How does Aetrix verify that SPB100N03S2-03 G is sourced from the original manufacturer or authorized distributors?

All SPB100N03S2-03 G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB100N03S2-03 G meets industry standards.

7.What is the process for return or replacement of SPB100N03S2-03 G?

All SPB100N03S2-03 G units undergo pre-shipment inspection (PSI). If there is an issue with SPB100N03S2-03 G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB100N03S2-03 G part is unused and in its original packaging.

Return procedure for SPB100N03S2-03 G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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