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Infineon Technologies IRF2805STRRPBF
- Part No.:
- IRF2805STRRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF2805STRRPBF.pdf
- Description:
- MOSFET N-CH 55V 135A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,445
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Product details
Overview
IRF2805STRRPBF from Infineon Technologies (formerly International Rectifier) is a 55V, 4.7mΩ N-channel HEXFET® Power MOSFET in D2PAK (TO-263) package, rated for 135A continuous drain current at 25°C and 96A at 100°C, with 175°C maximum junction temperature and 380mJ single-pulse avalanche energy - deployed in high-current DC motor drives and synchronous rectification stages.
For engineers reviewing the IRF2805STRRPBF datasheet, IRF2805STRRPBF pinout, IRF2805STRRPBF application, or IRF2805STRRPBF equivalent, key selection criteria include its 3.9–4.7mΩ RDS(on) at VGS = 10V, 150–230nC total gate charge, 2.0V/ns diode recovery dv/dt rating, and validated repetitive avalanche capability up to Tjmax.
Technical Context
This device uses advanced planar HEXFET® processing to achieve ultra-low on-resistance per die area while maintaining robust thermal performance. Its 175°C operating junction temperature and 0.75°C/W junction-to-case thermal resistance enable high-power density designs without forced cooling in many industrial applications.
The MOSFET features fast switching (td(on) = 14ns, tr = 120ns, td(off) = 68ns, tf = 110ns at VDD = 28V, ID = 104A, RG = 2.5Ω), low output capacitance (Coss = 860pF at VDS = 44V), and a body diode with 1.3V forward voltage at 104A and 80–120ns reverse recovery time.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55V - Maximum blocking voltage before avalanche onset; defines upper limit of DC bus voltage in motor drive or SMPS primary-side switches. |
| RDS(on) | 3.9–4.7mΩ @ VGS = 10V, ID = 104A - Directly determines conduction loss (Pcond ≈ I² × RDS(on)) in high-current paths. |
| ID (25°C) | 135A - Continuous drain current rating under ideal heatsinking; limited by package (75A) and thermal design in practice. |
| EAS | 380mJ (single-pulse), 1220mJ (6-sigma tested) - Quantifies unclamped inductive switching robustness; enables reliable operation in relay/snubberless flyback or H-bridge freewheeling. |
| Qg | 150–230nC - Gate drive energy requirement; impacts driver selection, switching loss, and gate resistor sizing for EMI control. |
| dv/dt (diode) | 2.0V/ns - Maximum rate of voltage rise across source-drain during diode recovery; critical for preventing false turn-on in bridge configurations. |
| TJ max | 175°C - Enables sustained operation in sealed enclosures or high ambient environments without derating below 100°C case temperature. |
Pinout & Package
IRF2805STRRPBF is housed in a surface-mount D2PAK (TO-263) package with three terminals: Drain (tab), Source (pins 1 & 2), and Gate (pin 3). The exposed drain pad provides low-inductance, low-thermal-resistance connection to PCB copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current-carrying terminal, electrically connected to package backside | Must be soldered to large copper area for thermal dissipation and low-inductance high-current return path. |
| Source (Pins 1 & 2) | Reference node for gate drive and current sensing | Dual-pin layout reduces source inductance; critical for minimizing voltage spikes during fast switching. |
| Gate (Pin 3) | Control input for channel conduction | High-impedance input requiring low-impedance gate driver; sensitive to noise due to ~150nC Qg. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 3.9mΩ typical at 10V gate drive - reduces conduction losses by >30% vs. legacy 55V MOSFETs in 100A+ applications. |
| 175°C junction rating | Rated for full current up to 175°C - eliminates need for external thermal derating circuits in enclosed industrial drives. |
| Repetitive avalanche capability | Validated up to Tjmax with 100% production testing - supports reliable unclamped inductive switching in motor phase-legs without snubbers. |
| Fast body diode | trr = 80–120ns, Qrr = 290–430nC - minimizes reverse recovery loss and EMI in synchronous rectifiers and half-bridge topologies. |
| Low gate charge | Qgs = 38–57nC, Qgd = 52–78nC - enables efficient 100kHz+ switching with standard gate drivers (e.g., IR2110, UCC27531). |
Applications
| Industrial Motor Drive | DC-DC Synchronous Rectifier |
|---|---|
Use Scenario: High-current H-bridge for 48V BLDC motor control in material handling equipment. IC Role / Device Role / Timing Role: Low-side power switch handling peak currents ≥100A during PWM commutation. Use Value: 4.7mΩ RDS(on) limits conduction loss to <1.2W at 500W output, enabling natural convection cooling. |
Use Scenario: Secondary-side switch in isolated 12V/200A telecom DC-DC module. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce forward drop and improve efficiency. Use Value: 1.3V VSD at 104A and fast trr cut conduction loss by 65% vs. 40V Schottky, raising efficiency from 92% to 95.8%. |
| Uninterruptible Power Supply (UPS) | Automotive DC Power Distribution |
Use Scenario: Bidirectional battery interface in 48V hybrid UPS with regenerative braking. IC Role / Device Role / Timing Role: Main power switch in buck-boost converter managing charge/discharge current up to 120A. Use Value: Repetitive avalanche rating allows safe operation during load dump transients without clamping circuitry. |
Use Scenario: High-side load switch for 24V auxiliary systems (e.g., HVAC, steering assist) in commercial vehicles. IC Role / Device Role / Timing Role: Protected power distribution switch with integrated overcurrent and thermal shutdown. Use Value: 175°C rating ensures reliability in engine bay ambient up to 125°C without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N5LF8AG | RDS(on) = 2.2mΩ @ 10V (lower), but VDSS = 40V (reduced voltage margin); Qg = 190nC (similar); DFN8 5×6 package (no exposed drain tab) | Better for 24–40V systems where space and RDS(on) dominate; unsuitable for 48V+ bus or avalanche-prone inductive loads. | Select when board space is constrained and voltage stress remains ≤40V; avoid if unclamped inductive switching occurs. |
| IXTH120N55L2 | RDS(on) = 4.5mΩ @ 10V (comparable), VDSS = 55V (same), but TO-247 package (higher RθJC = 0.45°C/W), EAS = 520mJ (higher) | Better thermal performance with discrete heatsink; higher avalanche margin; larger footprint and higher cost. | Choose for air-cooled, high-reliability industrial inverters where thermal headroom and ruggedness outweigh size/cost constraints. |
Compared with STL220N5LF8AG and IXTH120N55L2, IRF2805STRRPBF offers optimal balance of low RDS(on), proven avalanche robustness, and D2PAK manufacturability - making it preferred for cost-sensitive, high-volume 48V motor drives where PCB copper serves as heatsink.
Availability
IRF2805STRRPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC synchronous rectifiers, and uninterruptible power supplies requiring stable component supply and long-term production continuity.
Supply support for IRF2805STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
This device belongs to Infineon's legacy HEXFET® Power MOSFET product line, originally developed by International Rectifier and optimized for high-efficiency, high-current switching in industrial motor control and power conversion systems.
FAQ
Is IRF2805STRRPBF RoHS-compliant and lead-free?
Yes. IRF2805STRRPBF carries the "PbF" suffix indicating full compliance with RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 3 marking. It uses matte tin plating on leads and lead-free solder-compatible packaging with no exemptions applied.
What is the recommended gate resistor value for 100kHz switching?
For 100kHz operation with minimal overshoot and EMI, a 5.1Ω non-inductive gate resistor is recommended when driving from a 1A peak gate driver (e.g., IR2110). This balances switching speed (tf/tr ~100ns) and ringing suppression, given its 150–230nC Qg and low internal gate resistance.
Can IRF2805STRRPBF replace IRF2805SPbF in existing designs?
Yes - IRF2805STRRPBF is the tape-and-reel version of IRF2805SPbF, sharing identical electrical specs, thermal characteristics, and D2PAK package dimensions. No layout or thermal redesign is needed; only reel packaging and ordering part number differ.
Does the body diode support continuous conduction mode (CCM) in synchronous buck converters?
Yes. With 104A pulsed source current rating, 1.3V VSD at 104A, and 80–120ns trr, the intrinsic body diode supports CCM operation up to ~150kHz in 48V-input buck converters delivering ≥100A, provided gate timing avoids shoot-through and layout minimizes source inductance.
IRF2805STRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 135A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.7mOhm @ 104A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 230 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5110 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF2805STRRPBF FAQ
1.How can I place an order for IRF2805STRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF2805STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF2805STRRPBF reliable?
The price and inventory of IRF2805STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF2805STRRPBF is usually 5 days.
3.What payment methods are accepted for IRF2805STRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF2805STRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF2805STRRPBF?
IRF2805STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF2805STRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF2805STRRPBF?
For technical support, including IRF2805STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF2805STRRPBF requirements.
6.How does Aetrix verify that IRF2805STRRPBF is sourced from the original manufacturer or authorized distributors?
All IRF2805STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF2805STRRPBF meets industry standards.
7.What is the process for return or replacement of IRF2805STRRPBF?
All IRF2805STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF2805STRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF2805STRRPBF part is unused and in its original packaging.
Return procedure for IRF2805STRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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