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Infineon Technologies AUIRFR3607TRL

Part No.:
AUIRFR3607TRL
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixAUIRFR3607TRL.pdf
Description:
MOSFET N-CH 75V 80A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,357

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Product details

Overview

AUIRFR3607TRL from Infineon Technologies (formerly International Rectifier) is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 75V VDSS, 7.34 mΩ typical RDS(on) at VGS = 10 V, and 56 A continuous drain current (package-limited). It features 175°C maximum junction temperature, fast switching (tr = 110 ns, tf = 96 ns), and qualified repetitive avalanche capability - deployed in high-reliability 12 V/24 V automotive powertrain and body control modules.

For engineers reviewing the AUIRFR3607TRL datasheet, AUIRFR3607TRL pinout, AUIRFR3607TRL application, or AUIRFR3607TRL equivalent, key selection criteria include its automotive AEC-Q101 qualification, low RDS(on) at elevated temperature, robust unclamped inductive switching performance, and thermal derating behavior under PCB-mount conditions.

Technical Context

This MOSFET employs advanced trench-gate silicon process technology to minimize conduction loss while maintaining high dv/dt immunity and controlled gate charge (Qg = 56 nC typ.). Its integrated body diode exhibits low VSD = 1.3 V and fast reverse recovery (trr = 33–50 ns), enabling efficient synchronous rectification and freewheeling in DC-DC converters and motor drivers.

The device supports operation up to 175°C junction temperature with validated repetitive avalanche energy (EAR) of 46 mJ at TJ = 25°C and IAS = 46 A. Thermal resistance is specified as RθJC = 1.045 °C/W (typ.) and RθJA = 110 °C/W on 1"² FR-4 PCB - critical for thermal design in space-constrained automotive ECUs.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 75 V - Maximum blocking voltage before avalanche onset; suitable for 24 V nominal automotive systems with load-dump margin.
RDS(on) typ. 7.34 mΩ at VGS = 10 V, TJ = 25°C - Enables <1.5 W conduction loss at 50 A, reducing heatsink requirements.
ID (Package) 56 A continuous at TC = 25°C - Determined by bond-wire and lead-frame thermal limits; derates linearly above 25°C.
Qg 56 nC typ. - Low gate charge enables fast turn-on with modest gate driver current (e.g., 1 A peak drives 10 ns rise time).
tr/tf 110 ns / 96 ns - Fast switching minimizes overlap loss in hard-switched topologies like buck regulators and H-bridge motor controls.
EAS 300 mJ (single-pulse) - Supports reliable unclamped inductive switching in solenoid and relay drive circuits without external snubbers.
TJ max 175°C - Enables operation in under-hood environments where ambient exceeds 125°C, per AEC-Q101 Grade 0/1 requirements.

Pinout & Package

Supplied in D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal enhancement. Pin assignment is standardized: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (G) Gate Control terminal; requires ≥10 V to fully enhance; threshold voltage range 2.0–4.0 V ensures noise immunity in automotive EMI environments.
Pin 2 (D) Drain Main high-side power terminal; electrically connected to exposed copper tab - must be soldered to large PCB copper pour for thermal conduction.
Pin 3 (S) Source Power return path and reference for gate drive; internal connection to source metallization; used for Kelvin sensing in precision current monitoring designs.

Key Features

Feature Design Value
AEC-Q101 qualified Passed full automotive stress testing including HTOL, TC, UHAST, and ESD (HBM Class H1C, CDM Class C4) - certified for safety-critical vehicle subsystems.
Repetitive avalanche rated Rated for unlimited repetitive avalanche pulses up to IAR = 46 A and EAR = 46 mJ at TJ = 25°C - eliminates need for external clamping in inductive load switching.
Low RDS(on) vs. temperature RDS(on) increases only ~1.8× from 25°C to 175°C (per Fig 4) - maintains efficiency across full operating range without active thermal compensation.
Fast body diode VSD = 1.3 V max, trr = 33–50 ns - reduces freewheeling loss and EMI in synchronous buck and half-bridge configurations.
Lead-free & RoHS compliant Meets JEDEC J-STD-020 moisture sensitivity level 3L-D PAK - supports standard reflow profiles without popcorn cracking risk.

Applications

Automotive Engine Control Unit (ECU) 12 V Battery Disconnect Switch

Use Scenario: High-side switch controlling fuel injector solenoid in gasoline direct injection system.

IC Role / Device Role / Timing Role: Power switch handling 12 V, 5–10 A pulsed loads with 1–2 ms on-time and strict EMI limits.

Use Value: Low RDS(on) minimizes voltage drop during cranking (low-battery condition); fast switching reduces electromagnetic emissions during turn-off.

Use Scenario: Bidirectional isolation switch between starter battery and auxiliary loads (e.g., winch, lighting) in off-road vehicles.

IC Role / Device Role / Timing Role: Single N-channel MOSFET configured in back-to-back topology with external gate driver for reverse polarity protection.

Use Value: 175°C rating allows mounting near engine bay heat sources; avalanche capability withstands load dump transients up to ±120 V.

Automotive HVAC Blower Motor Driver 48 V Mild Hybrid DC-DC Converter

Use Scenario: Low-side switch in PWM-controlled brushed DC blower motor (24 V nominal, 30 A peak).

IC Role / Device Role / Timing Role: High-current, thermally stressed switching element requiring stable RDS(on) over -40°C to +150°C ambient.

Use Value: 56 A package rating and 1.045 °C/W RθJC enable direct heatsink mounting without thermal interface material; low Qg reduces gate driver power loss.

Use Scenario: Synchronous rectifier in isolated flyback or forward converter stepping down 48 V bus to 12 V for infotainment supply.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to improve efficiency at 100–300 kHz switching frequency.

Use Value: Body diode trr ≤ 50 ns prevents reverse recovery spikes; low Coss (280 pF) and Crss (130 pF) reduce switching loss and EMI generation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL130N7F3AG 75 V, 1.3 mΩ RDS(on), 130 A (package-limited), DFN5x6 package - lower RDS(on) but higher Qg (110 nC) and no AEC-Q101 documentation in public datasheet. Preferred for ultra-low-loss 48 V systems; unsuitable for legacy D-Pak footprint replacement or high-temperature (>150°C) under-hood use without validation. Select when board redesign permits smaller footprint and thermal management supports higher peak currents.
ON Semiconductor NTMFS4C09NT1G 75 V, 8.0 mΩ RDS(on), 52 A, SO-8FL package - AEC-Q101 qualified, but RθJA = 130 °C/W (PCB mount) and no published repetitive avalanche rating. Suitable for cost-sensitive cabin electronics; not recommended for high-duty-cycle inductive switching or high-ambient under-hood locations. Choose for non-safety-critical interior modules where footprint and cost outweigh ruggedness requirements.

Compared with STL130N7F3AG and NTMFS4C09NT1G, AUIRFR3607TRL offers the best balance of proven automotive ruggedness, validated repetitive avalanche, and thermal performance in a widely supported D-Pak footprint - making it optimal for production ECUs where qualification traceability and field reliability are mandatory.

Availability

AUIRFR3607TRL is available at Aetrix Electronics and suitable for automotive engine control units, battery disconnect switches, HVAC blower drivers, and 48 V mild hybrid DC-DC converters requiring stable component supply across extended product lifecycles.

Supply support for AUIRFR3607TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

AUIRFR3607TRL belongs to the HEXFET® Automotive Power MOSFET product line, designed specifically for high-reliability, high-temperature switching in engine, transmission, and chassis control systems meeting ISO/TS 16949 and AEC-Q101 standards.

FAQ

Is AUIRFR3607TRL pin-compatible with standard D-Pak discrete MOSFETs?

Yes - AUIRFR3607TRL uses the industry-standard TO-252AA (D-Pak) outline with 3-pin configuration: Gate (Pin 1), Drain (Pin 2/tab), Source (Pin 3). Footprint matches IPC-7351B SO-252A, and thermal pad layout aligns with IR's AN-994 recommendations for 1"² FR-4 copper area.

What is the maximum allowable gate-source voltage for reliable operation?

The absolute maximum VGS is ±20 V per datasheet Section "Absolute Maximum Ratings". Operation beyond ±15 V risks permanent gate oxide damage; recommended drive is 10 V for full enhancement with margin, and 0 V or –5 V for guaranteed turn-off in noisy automotive environments.

Does AUIRFR3607TRL support paralleling for higher current capacity?

Yes - its positive RDS(on) temperature coefficient (Fig 4) enables natural current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and shared thermal plane; derate total current by 15% versus sum of individual ratings to account for layout-induced imbalance.

How is repetitive avalanche performance validated in production?

Each AUIRFR3607TRL wafer lot undergoes 100% avalanche pulse screening per AEC-Q101 Annex G, using IAS = 46 A, L = 0.12 mH, RG = 25 Ω, VGS = 10 V, and TJ = 175°C start condition. Energy per pulse is monitored to ensure EAR ≥ 46 mJ with zero parametric shift post-test.

AUIRFR3607TRL Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
75 V
Current - Continuous Drain (Id) @ 25°C:
56A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
9mOhm @ 46A, 10V
Vgs(th) (Max) @ Id:
4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
84 nC @ 10 V
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
3070 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
140W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

AUIRFR3607TRL FAQ

1.How can I place an order for AUIRFR3607TRL through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFR3607TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFR3607TRL reliable?

The price and inventory of AUIRFR3607TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFR3607TRL is usually 5 days.

3.What payment methods are accepted for AUIRFR3607TRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFR3607TRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFR3607TRL?

AUIRFR3607TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFR3607TRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFR3607TRL?

For technical support, including AUIRFR3607TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFR3607TRL requirements.

6.How does Aetrix verify that AUIRFR3607TRL is sourced from the original manufacturer or authorized distributors?

All AUIRFR3607TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFR3607TRL meets industry standards.

7.What is the process for return or replacement of AUIRFR3607TRL?

All AUIRFR3607TRL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFR3607TRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFR3607TRL part is unused and in its original packaging.

Return procedure for AUIRFR3607TRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AUIRFR3607TRL Tags

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