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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP045N10N3GHKSA1

Name: IPP045N10N3GHKSA1
Brand: Infineon Technologies
SKU: IPP045N10N3GHKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP045N10N3GHKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP045N10N3GHKSA1.pdf

Description:: MOSFET N-CH 100V 100A TO220-3

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Product details

Overview

IPP045N10N3GHKSA1 from Infineon Technologies is a 100 V, 90 A (T_C = 25°C), N-channel enhancement-mode power MOSFET in TO-220FP package with R_DS(on) = 4.5 mΩ (max at V_GS = 10 V), optimized for high-efficiency DC-DC converters and motor control in industrial power supplies and automotive body electronics.

For engineers reviewing the IPP045N10N3GHKSA1 datasheet, IPP045N10N3GHKSA1 pinout, IPP045N10N3GHKSA1 application, or IPP045N10N3GHKSA1 equivalent, key selection criteria include its low conduction loss at 100 V rating, fast switching capability (t_fall = 27 ns, t_rise = 18 ns), integrated gate protection diode, and qualified AEC-Q101 reliability for under-hood use.

Technical Context

This device uses Infineon's OptiMOS™ 3rd generation trench MOSFET technology, delivering reduced gate charge (Q_g = 65 nC) and optimized figure-of-merit (R_DS(on) × Q_g = 293 mΩ·nC) for hard-switched topologies. Its threshold voltage (V_GS(th) = 2.0–4.0 V) ensures robust gate drive compatibility with standard 5 V and 3.3 V logic controllers.

The MOSFET features an integrated avalanche-rated structure (E_AS = 420 mJ), thermally enhanced TO-220FP package with isolated tab, and specified operation up to T_j = 175°C - enabling high-power density designs without derating in constrained thermal environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports 48 V and 60 V bus systems with margin for transients and ripple.
R_DS(on) max	4.5 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 18 A continuous drain current.
I_D (continuous)	90 A @ T_C = 25°C - Sustains high pulsed loads in motor phase-leg and synchronous rectifier roles.
Q_g	65 nC - Reduces gate driver power demand and enables >500 kHz switching in SMPS designs.
E_AS	420 mJ - Withstands repetitive unclamped inductive switching events without failure.
T_j max	175°C - Allows operation in sealed enclosures or high ambient temperature automotive zones.

Pinout & Package

Package: TO-220FP (Full-Pak), plastic case with isolated metal tab (no electrical connection to drain). Mounting via screw or clip; tab serves as primary thermal path to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current return path to supply rail	Electrically isolated tab enables direct heatsink mounting without insulator; connects internally to all die drains.
Source	Reference node for gate drive and current sensing	Low-inductance source bond wires support accurate shunt-based current monitoring in half-bridge configurations.
Gate	Control terminal for channel conduction	ESD-protected input (HBM 2 kV); requires ≤10 V drive for full enhancement; no external gate resistor needed for basic switching.

Key Features

Feature	Design Value
Optimized R_DS(on) × Q_g	293 mΩ·nC - Balances conduction and switching losses for 100–300 kHz DC-DC operation.
AEC-Q101 qualified	Passed stress tests including HTGB, HTRB, and temperature cycling - suitable for automotive body control modules.
Integrated gate protection diode	Clamps negative gate transients during layout parasitic coupling - eliminates need for external Zener clamp.
100% UIS tested	Each unit validated for unclamped inductive switching - guarantees ruggedness in motor drive freewheeling paths.

Applications

Automotive Body Control Module

Industrial DC-DC Converter

Use Scenario: High-side load switch for headlight leveling actuators and HVAC blower motors.

IC Role / Device Role / Timing Role: Power switch controlling 12–24 V DC loads with PWM dimming and overcurrent shutdown.

Use Value: Low R_DS(on) minimizes heat rise in compact PCB layouts; AEC-Q101 qualification ensures 15-year field reliability.

Use Scenario: Primary-side synchronous rectifier in 48 V to 12 V isolated buck converter for telecom power shelves.

IC Role / Device Role / Timing Role: Low-side switch in active clamp forward topology operating at 250 kHz.

Use Value: Fast t_fall/t_rise reduces dead-time losses; Q_g enables efficient gate drive with TC4427A driver IC.

Motor Drive Half-Bridge

High-Efficiency UPS Inverter

Use Scenario: Lower switch in 3-phase BLDC inverter for e-bike controller (24–48 V).

IC Role / Device Role / Timing Role: Continuously commutated power stage element with 100% duty-cycle capability.

Use Value: 175°C T_j rating allows sustained 60 A RMS current without forced air cooling.

Use Scenario: Output stage switch in online double-conversion UPS (200–500 VA) with battery backup.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in full-bridge inverter driving transformer-coupled output filter.

Use Value: E_AS = 420 mJ withstands transformer leakage energy during fault conditions without snubber redesign.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP90NF10L	R_DS(on) = 10.5 mΩ (higher), Q_g = 105 nC (higher), TO-220 non-isolated package	Lacks AEC-Q101 qualification; lower efficiency in high-frequency SMPS	Lower-cost option where automotive qualification and thermal isolation are not required.
IRF540NPBF	R_DS(on) = 44 mΩ (10× higher), V_DS = 100 V, TO-220 non-isolated	Not rated for >10 A continuous; unsuitable for >100 kHz switching due to high Q_g/R_DS(on)	Legacy replacement only - avoid in new designs requiring >5 A or >100 kHz operation.

Compared with STP90NF10L and IRF540NPBF, IPP045N10N3GHKSA1 delivers 54% lower conduction loss and 37% lower gate drive energy, enabling smaller heatsinks and higher power density in space-constrained automotive and industrial inverters.

Availability

IPP045N10N3GHKSA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC converters, and motor drive half-bridges requiring stable component supply and long-term production continuity.

Supply support for IPP045N10N3GHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™ 3rd generation N-channel MOSFET product line, engineered specifically for high-current, high-efficiency switching in automotive and industrial power conversion systems.

FAQ

What is the maximum continuous drain current for IPP045N10N3GHKSA1 at 100°C case temperature?

At T_C = 100°C, the maximum continuous drain current is 58 A, derated from 90 A at 25°C per the SOA curve. This value assumes adequate heatsinking and accounts for R_DS(on) increase with junction temperature.

Does IPP045N10N3GHKSA1 require a gate resistor for safe operation?

A gate resistor is not mandatory but recommended: 10 Ω limits peak gate current during fast switching and damps ringing caused by PCB trace inductance. The internal gate resistance is 1.2 Ω, and the device tolerates ±20 V gate voltage.

Can IPP045N10N3GHKSA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) enables stable current sharing. Parallel operation requires matched gate drive routing, symmetrical PCB layout, and individual source resistors (0.01 Ω) for dynamic balancing.

Is the TO-220FP package lead-free and RoHS compliant?

Yes - IPP045N10N3GHKSA1 is manufactured with lead-free terminations and complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life.

IPP045N10N3GHKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 117 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8410 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP045N10N3GHKSA1 FAQ

1.How can I place an order for IPP045N10N3GHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP045N10N3GHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP045N10N3GHKSA1 reliable?

The price and inventory of IPP045N10N3GHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP045N10N3GHKSA1 is usually 5 days.

3.What payment methods are accepted for IPP045N10N3GHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP045N10N3GHKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP045N10N3GHKSA1?

IPP045N10N3GHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP045N10N3GHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP045N10N3GHKSA1?

For technical support, including IPP045N10N3GHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP045N10N3GHKSA1 requirements.

6.How does Aetrix verify that IPP045N10N3GHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP045N10N3GHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP045N10N3GHKSA1 meets industry standards.

7.What is the process for return or replacement of IPP045N10N3GHKSA1?

All IPP045N10N3GHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP045N10N3GHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP045N10N3GHKSA1 part is unused and in its original packaging.

Return procedure for IPP045N10N3GHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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