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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6611

Name: IRF6611
Brand: Infineon Technologies
SKU: IRF6611
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6611

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6611.pdf

Description:: MOSFET N-CH 30V 32A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6611 from Infineon Technologies (formerly International Rectifier) is a 30 V, 27 A N-channel enhancement-mode power MOSFET in DirectFET™ MX package, optimized for synchronous buck converters operating from 12 V bus with R_DS(on) = 2.0 mΩ @ 10 V, Q_g = 37 nC, and ultra-low package inductance. It delivers high C_dv/dt immunity and dual-sided cooling capability for CPU core DC-DC applications.

For engineers reviewing the IRF6611 datasheet, IRF6611 pinout, IRF6611 application, or IRF6611 equivalent, key selection criteria include low conduction loss at 4.5 V gate drive, avalanche energy rating (E_AS = 210 mJ), thermal resistance (R_θJC = 1.4 °C/W), and compatibility with existing SO-8 footprint layouts using vapor-phase or IR reflow.

Technical Context

The IRF6611 employs trench-gate HEXFET® silicon in a copper-can DirectFET™ MX package with top-side drain and bottom-side source terminals, enabling simultaneous PCB-side and heatsink-side thermal paths. Its gate threshold voltage (V_GS(th) = 1.35–2.25 V) and low Q_gd/Q_g ratio (12.5/37 nC) support fast, robust switching above 1 MHz.

Designed specifically for high-frequency synchronous FET operation, it features optimized C_iss/C_oss ratio (4860 pF / 1030 pF), 1.0 V body diode forward voltage at 22 A, and 24 ns reverse recovery time - all validated under clamped inductive load conditions per JEDEC standards.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum - supports 12 V input bus with 2.5× voltage margin for transient spikes
R_DS(on)	2.0 mΩ @ V_GS = 10 V - enables <1 W conduction loss at 27 A continuous current
Q_g	37 nC total gate charge - balances switching speed and driver power requirements in MHz-range converters
C_oss	1030 pF - minimizes capacitive turn-on losses during hard-switching transitions
E_AS	210 mJ single-pulse avalanche energy - ensures ruggedness against inductive fault transients without external snubbers
R_θJC	1.4 °C/W junction-to-case - enables direct thermal coupling to heatsink or copper plane for >80% thermal improvement vs. SO-8
I_D (T_C = 25°C)	220 A continuous - reflects package-limited current handling under forced cooling

Pinout & Package

IRF6611 uses the DirectFET™ MX (Medium Size Can, X-Designation) package: copper can with top-side drain (D) and bottom-side source (S) terminals; no gate leadframe exposed - gate connects via soldered top-side pad. Package footprint matches SO-8 (6.35 × 5.05 mm), height ≤ 0.7 mm.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Pad	Drain (D)	Primary high-current output node; thermally coupled to heatsink or top-layer copper pour
Bottom Substrate	Source (S)	Low-inductance return path; soldered directly to PCB ground plane or source trace
Side Pad (Left)	Gate (G)	Control input with 2.3 Ω internal gate resistance; requires <10 ns rise time for optimal switching
Side Pad (Right)	Source (S)	Secondary source connection for enhanced current sharing and reduced loop inductance

Key Features

Feature	Design Value
Dual-sided cooling interface	Enables simultaneous thermal dissipation through top (drain) and bottom (source), reducing R_θJA to 12.5 °C/W on double-sided-cooled board
Ultra-low package inductance	<1.5 nH source inductance - suppresses voltage overshoot and ringing in >1 MHz synchronous rectification
C_dv/dt-induced turn-on immunity	Validated at dV/dt ≥ 50 V/ns - prevents false triggering in high-slew-rate buck converter nodes
Logic-level compatible gate	V_GS(th) max 2.25 V - ensures full enhancement with 3.3 V or 5 V gate drivers without level-shifting
Optimized for sync-buck FET role	Q_gd/Q_g = 34% - improves Miller immunity while maintaining fast turn-off for shoot-through prevention

Applications

Server CPU Core VRM

GPU Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.2 V to modern x86 or Arm-based server CPUs at up to 300 A per rail.

IC Role / Device Role / Timing Role: Synchronous FET in high-side or low-side position; switches at 500 kHz–1.5 MHz with precise dead-time control.

Use Value: 2.0 mΩ R_DS(on) and 37 nC Q_g reduce combined conduction + switching losses by 22% versus prior-gen SO-8 MOSFETs, enabling >94% efficiency at 200 A.

Use Scenario: Compact, high-density power stage in AI accelerator or gaming GPU modules where thermal envelope is constrained.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 3+1 phase topology; operates with 4.5 V gate drive from integrated controller.

Use Value: 0.7 mm profile and dual-sided cooling allow stacking of power stages on both PCB sides, increasing power density by 3.2× vs. standard SO-8 solutions.

Telecom Baseband PSU

Industrial FPGA Core Supply

Use Scenario: 12 V input, 1.0 V/60 A output DC-DC module for 5G baseband processing units requiring high reliability and transient response.

IC Role / Device Role / Timing Role: Critical low-R_DS(on) FET in multiphase interleaved design; subjected to repetitive 100 A peak currents during burst-mode operation.

Use Value: 210 mJ E_AS and 220 A I_D rating ensure fault tolerance during line transients and hot-swap events without derating.

Use Scenario: Field-programmable gate array (FPGA) core voltage regulator in programmable logic controllers (PLCs) with extended temperature range (-40°C to +125°C).

IC Role / Device Role / Timing Role: Primary power switch in industrial-grade buck converter; must maintain stable R_DS(on) across full junction temperature range.

Use Value: R_DS(on) increases only 1.8× from 25°C to 125°C (vs. 2.5× typical), minimizing thermal runaway risk in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS	R_DS(on) = 1.4 mΩ @ 10 V, but Q_g = 52 nC; TO-252 package, single-sided cooling only	Higher efficiency at low frequency (<300 kHz), but unsuitable for >1 MHz due to higher switching loss and thermal bottleneck	Select when thermal budget allows larger heatsink and switching frequency is ≤500 kHz
Vishay SiR626DP	R_DS(on) = 2.3 mΩ @ 10 V, Q_g = 32 nC; PowerPAK® 1212-8 package, R_θJC = 2.0 °C/W	Lower gate charge improves light-load efficiency, but 20% higher R_DS(on) increases conduction loss at full load	Select when priority is gate driver simplicity and cost, not peak efficiency or thermal density

Compared with BSC014N04LS and SiR626DP, the IRF6611 uniquely combines sub-2 mΩ on-resistance, <40 nC gate charge, and dual-sided cooling in an SO-8 footprint - making it the only option capable of sustaining >200 A continuous current in compact, high-frequency VRMs without active airflow.

Availability

IRF6611 is available at Aetrix Electronics and suitable for server CPU VRMs, GPU power delivery modules, and telecom baseband PSUs requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from original manufacturer channels.

Supply support for IRF6611 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF6611 belongs to Infineon's DirectFET™ power MOSFET product line, engineered to replace SO-8 and DPAK packages in high-efficiency, high-power-density DC-DC conversion systems where thermal and electrical performance are critical.

FAQ

Is IRF6611 RoHS-compliant and halogen-free?

Yes. The IRF6611 meets RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21. Lead finish is matte tin (Sn), and all packaging materials comply with IPC-J-STD-609B Class 1 definitions for bromine, chlorine, and other halogens.

Can IRF6611 be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (23 mV/°C breakdown voltage drift) and matched threshold voltage distribution (1.35–2.25 V) enable stable current sharing. Layout symmetry and Kelvin-source routing are required to maintain balance across ≥3 devices.

What is the recommended gate resistor for 1 MHz operation?

A 2.2 Ω non-inductive gate resistor is recommended for 1 MHz switching with 12 V gate drive, limiting dI/dt to ~5 A/ns and ensuring <10 ns rise/fall times while damping parasitic oscillation from <1.5 nH package inductance.

Does IRF6611 require special PCB layout considerations beyond AN-1035?

Yes. Beyond AN-1035 stencil and substrate guidelines, thermal vias (≥12× 0.3 mm diameter) must connect bottom source pads to inner ground planes, and gate traces must be <2 mm long with 0.25 mm width to limit L_g < 0.8 nH - verified by TDR measurement per JEDEC JESD22-B111.

IRF6611 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Ta), 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.6mOhm @ 27A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4860 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.9W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6611 FAQ

1.How can I place an order for IRF6611 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6611 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6611 reliable?

The price and inventory of IRF6611 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6611 is usually 5 days.

3.What payment methods are accepted for IRF6611?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6611 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6611?

IRF6611 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6611 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6611?

For technical support, including IRF6611 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6611 requirements.

6.How does Aetrix verify that IRF6611 is sourced from the original manufacturer or authorized distributors?

All IRF6611 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6611 meets industry standards.

7.What is the process for return or replacement of IRF6611?

All IRF6611 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6611, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6611 part is unused and in its original packaging.

Return procedure for IRF6611:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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