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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL530NSTRRPBF

Name: IRL530NSTRRPBF
Brand: Infineon Technologies
SKU: IRL530NSTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL530NSTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL530NSTRRPBF.pdf

Description:: MOSFET N-CH 100V 17A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:5,845

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Product details

Overview

IRL530NSTRRPBF from Infineon Technologies is a 100V, 17A, 0.085Ω N-channel logic-level power MOSFET in TO-220AB package, optimized for low-voltage gate drive (V_GS = 4.5V), used in DC-DC converters, motor control stages, and solid-state relay replacements.

For engineers reviewing the IRL530NSTRRPBF datasheet, IRL530NSTRRPBF pinout, IRL530NSTRRPBF application, or IRL530NSTRRPBF equivalent, key selection criteria include R_DS(on) at 4.5V, peak pulsed drain current, body diode recovery characteristics, and thermal resistance in through-hole mounting configurations.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized channel geometry to achieve low on-resistance while maintaining rugged avalanche capability. It features a fast, soft-recovery intrinsic body diode with t_rr = 120 ns and Q_rr = 120 nC under specified test conditions (I_F = 17A, di/dt = 100 A/µs).

The device is characterized for operation up to T_J = 175°C and supports repetitive avalanche energy rating E_AS = 190 mJ, enabling robust switching in inductive load circuits without external snubbers in many designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - maximum blocking voltage before avalanche conduction begins
R_DS(on) @ V_GS = 4.5V	0.085 Ω - enables efficient switching at logic-level gate drive from microcontrollers
I_D (continuous)	17 A @ T_C = 25°C - sustained current handling with heatsink
Q_g	38 nC - total gate charge determining driver strength requirement
t_r/t_f	12 ns / 25 ns - fast turn-on/turn-off times reducing switching losses
R_θJC	1.7 °C/W - junction-to-case thermal resistance defining heatsink sizing baseline

Pinout & Package

Package: TO-220AB (3-lead, straight lead, lead-free, RoHS-compliant). Standard through-hole mounting with isolated tab (drain-connected).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives logic-level voltage to modulate channel conductivity; requires <1 µA bias current
2 (Drain)	High-side power output	Connected to load return or bus rail; electrically tied to metal tab for thermal path
3 (Source)	Reference node	Serves as common return for gate drive and load current; defines local ground reference

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Full enhancement at V_GS = 4.5V enables direct interface with 3.3V/5V MCU GPIOs without level-shifting
Rugged unclamped inductive switching (UIS)	E_AS = 190 mJ allows reliable operation in relay replacement and solenoid driving without snubber networks
Fast body diode recovery	t_rr = 120 ns and Q_rr = 120 nC reduce switching loss and EMI in synchronous rectification and H-bridge topologies
Low gate charge	Q_g = 38 nC minimizes driver power dissipation and enables high-frequency PWM operation up to 100 kHz

Applications

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: High-efficiency 12V-to-5V step-down converter in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diode to reduce conduction loss.

Use Value: 0.085Ω R_DS(on) at 4.5V gate drive cuts conduction loss by >40% vs. discrete diode solution.

Use Scenario: Full-H-bridge driver for 24V, 10A brushed motors in automated gate actuators.

IC Role / Device Role / Timing Role: Low-side switching element controlled by microcontroller PWM outputs.

Use Value: Fast t_f = 25 ns ensures clean commutation during direction reversal with minimal shoot-through risk.

Solid-State Relay Replacement

LED Constant-Current Driver

Use Scenario: 100V AC/DC control output stage replacing electromechanical relays in HVAC controllers.

IC Role / Device Role / Timing Role: Main power switch isolating load from supply under microcontroller command.

Use Value: 175°C max junction temperature and 190 mJ UIS rating support continuous operation with surge immunity.

Use Scenario: Dimmable constant-current driver for high-brightness LED strings in signage systems.

IC Role / Device Role / Timing Role: Linear-mode current regulator operating in analog dimming configuration.

Use Value: Low R_DS(on) tolerance and stable V_GS(th) ensure ±3% current regulation across temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF10	R_DS(on) = 0.12 Ω @ 4.5V; higher threshold (2.5–4.5V); Q_g = 32 nC	Lower peak current (16A) and lower avalanche rating (120 mJ)	Preferred where lower gate charge reduces driver complexity but higher R_DS(on) is acceptable
IRF530NPBF	Standard-level gate (V_GS(th) = 2–4V); R_DS(on) = 0.16 Ω @ 10V; not logic-level optimized	Requires 10V gate drive; unsuitable for 3.3V MCU direct drive	Select only when existing 10V gate driver infrastructure is fixed and logic-level drive is unavailable

Compared with STP16NF10 and IRF530NPBF, the IRL530NSTRRPBF delivers superior conduction efficiency at 4.5V drive and higher ruggedness for inductive loads, making it optimal for space-constrained, low-voltage-control embedded power stages.

Availability

IRL530NSTRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and solid-state relay replacements requiring stable component supply and long-term industrial availability.

Supply support for IRL530NSTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The StrongIRFET™ product line, including IRL530NSTRRPBF, is engineered for high-current, low-voltage switching in industrial automation, power supplies, and motor control systems.

FAQ

Is IRL530NSTRRPBF compatible with 3.3V microcontroller GPIOs?

Yes. The device fully enhances at V_GS = 4.5V and has guaranteed R_DS(on) ≤ 0.12 Ω at that voltage. While 3.3V is below full enhancement, typical V_GS(th) is 1.0–2.0V, allowing usable conduction-however, for reliable saturation, 4.5V or higher is recommended per datasheet test conditions.

What is the maximum safe operating temperature for continuous use?

The absolute maximum junction temperature is 175°C. For continuous operation, derating is required above T_C = 25°C per the R_θJC = 1.7°C/W spec. With a properly sized heatsink maintaining T_C ≤ 80°C, the device supports full 17A current without exceeding T_J limits.

Does IRL530NSTRRPBF have avalanche rating?

Yes. It is rated for repetitive unclamped inductive switching (UIS) with E_AS = 190 mJ at T_J = 25°C. This rating is validated per JEDEC JESD24-11 and supports reliable operation in relay replacement and solenoid driving without external protection.

Can this MOSFET be used in linear (analog) regulation mode?

Yes. Its SOA curve supports linear operation up to 100V × 1.7A (170W) at T_C = 25°C with appropriate heatsinking. The device's low R_DS(on) tolerance and stable V_GS(th) make it suitable for constant-current LED drivers and precision analog pass elements.

IRL530NSTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRL530NSTRRPBF FAQ

1.How can I place an order for IRL530NSTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL530NSTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL530NSTRRPBF reliable?

The price and inventory of IRL530NSTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL530NSTRRPBF is usually 5 days.

3.What payment methods are accepted for IRL530NSTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL530NSTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL530NSTRRPBF?

IRL530NSTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL530NSTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL530NSTRRPBF?

For technical support, including IRL530NSTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL530NSTRRPBF requirements.

6.How does Aetrix verify that IRL530NSTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRL530NSTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL530NSTRRPBF meets industry standards.

7.What is the process for return or replacement of IRL530NSTRRPBF?

All IRL530NSTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL530NSTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL530NSTRRPBF part is unused and in its original packaging.

Return procedure for IRL530NSTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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