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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF2804STRLMOSFET N-CH 40V 75A D2PAK Infineon Technologies |
6,812 | 0.00 |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 10V | 2mOhm @ 75A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 6450 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
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IRF2804STRRMOSFET N-CH 40V 75A D2PAK Infineon Technologies |
7,815 | 0.00 |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 10V | 2mOhm @ 75A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 6450 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
BSB280N15NZ3GXUMA1MOSFET N-CH 150V 9A/30A 2WDSON Infineon Technologies |
8,799 | 0.00 |
|
Datasheet |
OptiMOS™ | 3-WDSON | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 9A (Ta), 30A (Tc) | 10V | 28mOhm @ 30A, 10V | 4V @ 60µA | 21 nC @ 10 V | ±20V | 1600 pF @ 75 V | - | 2.8W (Ta), 57W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2, CanPAK M™ |
|
IGT60R190D1ATMA1GAN HV Infineon Technologies |
5,156 | 0.00 |
|
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- | - | Tape & Reel (TR) | Last Time Buy | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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IGLD60R190D1SAUMA1GAN HV PG-LSON-8 Infineon Technologies |
2,021 | 0.00 |
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- |
CoolGaN™ | 8-LDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 600 V | 10A (Tc) | - | - | 1.6V @ 960µA | - | -10V | 157 pF @ 400 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-LSON-8-1 |
|
IPI051N15N5AKSA1MV POWER MOS Infineon Technologies |
6,384 | 0.00 |
|
Datasheet |
OptiMOS™ 5 | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 120A (Tc) | 8V, 10V | 5.1mOhm @ 60A, 10V | 4.6V @ 264µA | 100 nC @ 10 V | ±20V | 7800 pF @ 75 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
IPW60R125CPFKSA1MOSFET N-CH 600V 25A TO247-3 Infineon Technologies |
8,102 | 0.00 |
|
Datasheet |
CoolMOS™ | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 125mOhm @ 16A, 10V | 3.5V @ 1.1mA | 70 nC @ 10 V | ±20V | 2500 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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SPB07N60S5ATMA1MOSFET N-CH 600V 7.3A TO263-3 Infineon Technologies |
7,655 | 0.00 |
|
Datasheet |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 5.5V @ 350µA | 35 nC @ 10 V | ±20V | 970 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IRFB3307MOSFET N-CH 75V 130A TO220AB Infineon Technologies |
9,242 | 0.00 |
|
Datasheet |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 130A (Tc) | 10V | 6.3mOhm @ 75A, 10V | 4V @ 150µA | 180 nC @ 10 V | ±20V | 5150 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFP460APBFXKMA1PLANAR >= 100V Infineon Technologies |
2,225 | 0.00 |
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- | - | Tube | Not For New Designs | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
