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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI051N15N5AKSA1

Name: IPI051N15N5AKSA1
Brand: Infineon Technologies
SKU: IPI051N15N5AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI051N15N5AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI051N15N5AKSA1.pdf

Description:: MV POWER MOS

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPI051N15N5AKSA1 from Infineon Technologies is a 150 V, 120 A N-channel enhancement-mode MOSFET in PG-TO262-3 (I²-PAK) package, featuring 5.1 mΩ max R_DS(on) at V_GS = 10 V, 175 °C rated junction temperature, and optimized gate charge × R_DS(on) figure-of-merit for high-frequency synchronous rectification in DC-DC converters and motor drives.

For engineers reviewing the IPI051N15N5AKSA1 datasheet, IPI051N15N5AKSA1 pinout, IPI051N15N5AKSA1 application, or IPI051N15N5AKSA1 equivalent, key selection criteria include its low conduction loss (4.0–5.1 mΩ), fast switching (Q_g = 80–100 nC, t_f = 37 ns), integrated body diode with Q_rr = 106–212 nC, and JEDEC-qualified reliability for industrial power stages.

Technical Context

This OptiMOS™5 device employs trench-gate superjunction technology to achieve ultra-low R_DS(on) while maintaining robust avalanche capability (E_AS = 230 mJ) and stable gate threshold (V_GS(th) = 3.0–4.6 V). Its dynamic parameters-C_iss = 6000–7800 pF, C_oss = 1500–1950 pF, and Q_gd = 16–24 nC-are optimized for ZVS and hard-switching topologies.

The MOSFET supports continuous operation up to T_j = 175 °C with R_thJC = 0.3–0.5 K/W, enabling high-power density designs. Its reverse diode exhibits V_SD = 0.87–1.1 V at 60 A and trr = 72–144 ns, making it suitable for bidirectional current handling in half-bridge and LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Maximum blocking voltage for 12 V–48 V input bus systems with 20 % derating margin
R_DS(on), max	5.1 mΩ at V_GS = 10 V, I_D = 60 A - Enables <1.5 W conduction loss at 60 A, critical for thermal management
I_D, cont	120 A at T_C = 25 °C - Supports high-current output stages without parallel devices in compact PCB layouts
Q_g	80–100 nC - Low gate drive energy reduces driver IC stress and enables >500 kHz switching in SMPS
E_AS	230 mJ - Withstands single-pulse inductive energy without failure in motor control and UPS applications
T_j max	175 °C - Allows sustained operation in sealed enclosures or high-ambient environments without forced cooling
V_GS(th)	3.0–4.6 V - Ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers

Pinout & Package

Package: PG-TO262-3 (I²-PAK), surface-mount with isolated tab (Drain-connected), RoHS-compliant lead plating, halogen-free per IEC61249-2-21.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; low input capacitance (C_iss ≈ 6.9 nF) minimizes driver loading
Pin 2 (Drain) + Tab	High-side power path	Tab is electrically connected to Drain; provides low-inductance, high-current path to heatsink
Pin 3 (Source)	Reference node	Serves as return path for load current and gate drive reference; critical for stable switching waveform integrity

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	≈405–510 nC·mΩ - Reduces total switching + conduction losses simultaneously in high-efficiency PSUs
175 °C operating temperature rating	Enables full-rated current delivery in automotive under-hood or industrial ambient up to 105 °C
JEDEC-qualified reliability	Validated per J-STD-020 and JESD22 for moisture sensitivity level (MSL) 1 and temperature cycling endurance
Low reverse recovery charge (Q_rr)	106–212 nC - Minimizes diode-induced shoot-through risk and EMI in synchronous rectifier configurations
Integrated body diode with fast trr	72–144 ns - Supports efficient freewheeling in buck, flyback, and half-bridge topologies without external Schottky

Applications

Server VRMs

Industrial Motor Drives

Use Scenario: High-current, multi-phase buck converters delivering 50–200 A to CPU/GPU cores at ≤1.2 V.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch with precise dead-time control and low R_DS(on) to minimize I²R loss.

Use Value: Achieves >95 % efficiency at 100 A due to 5.1 mΩ R_DS(on) and fast 37 ns fall time reducing overlap loss.

Use Scenario: Inverter leg in 3 kW–10 kW variable-frequency drives for pumps, fans, and conveyors.

IC Role / Device Role / Timing Role: Main power switch in 600 V-class inverter topology, handling 120 A peak phase current.

Use Value: Sustains 175 °C junction temperature during overload conditions and delivers 230 mJ avalanche energy for fault tolerance.

Telecom DC-DC Converters

Renewable Energy Inverters

Use Scenario: Isolated forward or active-clamp forward converters converting -48 V telecom input to 12 V/24 V system rails.

IC Role / Device Role / Timing Role: Primary-side switch operating at 300–600 kHz with low Q_g to reduce gate driver power dissipation.

Use Value: Gate charge of 80–100 nC enables use of low-cost 1-A gate drivers while maintaining clean 19.6 ns turn-on delay.

Use Scenario: DC-link switching stage in string inverters for solar PV arrays with 600–1000 V DC input.

IC Role / Device Role / Timing Role: High-voltage, high-current switch in H-bridge configuration managing bidirectional energy flow.

Use Value: Body diode Q_rr = 106–212 nC and trr = 72–144 ns suppresses voltage spikes during commutation, improving system reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 150 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW120N15F8	R_DS(on) = 5.5 mΩ (max), Q_g = 105 nC, TO-247 package, no integrated diode data provided	Higher gate charge increases driver loss; TO-247 requires larger footprint and higher thermal resistance	Prefer when legacy TO-247 layout compatibility is required and diode performance is secondary
IXFH120N15X3	R_DS(on) = 4.8 mΩ (typ), Q_g = 120 nC, TO-247 package, specified Q_rr = 250 nC	Higher Q_rr increases switching loss in synchronous rectification; larger package limits power density	Select only if higher avalanche rating (E_AS = 420 mJ) is prioritized over efficiency and size

Compared with STW120N15F8 and IXFH120N15X3, IPI051N15N5AKSA1 offers superior power density via I²-PAK packaging, lower Q_g/R_DS(on) FOM, and verified diode performance-making it optimal for space-constrained, high-efficiency industrial and telecom power stages.

Availability

IPI051N15N5AKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom DC-DC converters, and renewable energy inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPI051N15N5AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

This device belongs to the OptiMOS™5 family, engineered specifically for high-efficiency, high-power-density power conversion in industrial, computing, and telecom infrastructure where low R_DS(on), fast switching, and thermal robustness are critical.

FAQ

What is the maximum continuous drain current for IPI051N15N5AKSA1 at 100 °C case temperature?

The maximum continuous drain current is 115 A at T_C = 100 °C, as specified in Table 2 of the Rev. 2.0 datasheet. This derating from 120 A at 25 °C reflects thermal resistance limitations and ensures safe operation within the 175 °C maximum junction temperature limit.

Does IPI051N15N5AKSA1 have an integrated body diode, and what are its key parameters?

Yes, it includes a monolithic body diode with continuous forward current rating of 120 A at T_C = 25 °C, forward voltage V_SD = 0.87–1.1 V at 60 A and 25 °C, reverse recovery time trr = 72–144 ns, and reverse recovery charge Q_rr = 106–212 nC under specified test conditions (VR = 75 V, IF = 60 A, diF/dt = 100 A/µs).

Is IPI051N15N5AKSA1 suitable for gate driving with a 5 V logic-level controller?

Yes. Its gate threshold voltage V_GS(th) ranges from 3.0 V to 4.6 V, ensuring full enhancement at 5 V gate drive. The device is characterized for R_DS(on) down to 4.0 mΩ at V_GS = 8 V, confirming robust operation with standard 5 V microcontroller or gate driver outputs.

What is the thermal resistance from junction to case (R_thJC) for IPI051N15N5AKSA1?

The junction-to-case thermal resistance is 0.3–0.5 K/W, as stated in Table 3 of the datasheet. This low value enables efficient heat transfer to an external heatsink mounted on the exposed drain tab, supporting high-power operation with minimal temperature rise across the die.

IPI051N15N5AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 5.1mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 4.6V @ 264µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7800 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3-1

IPI051N15N5AKSA1 FAQ

1.How can I place an order for IPI051N15N5AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI051N15N5AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI051N15N5AKSA1 reliable?

The price and inventory of IPI051N15N5AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI051N15N5AKSA1 is usually 5 days.

3.What payment methods are accepted for IPI051N15N5AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI051N15N5AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI051N15N5AKSA1?

IPI051N15N5AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI051N15N5AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI051N15N5AKSA1?

For technical support, including IPI051N15N5AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI051N15N5AKSA1 requirements.

6.How does Aetrix verify that IPI051N15N5AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI051N15N5AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI051N15N5AKSA1 meets industry standards.

7.What is the process for return or replacement of IPI051N15N5AKSA1?

All IPI051N15N5AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI051N15N5AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI051N15N5AKSA1 part is unused and in its original packaging.

Return procedure for IPI051N15N5AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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