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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF2804STRR

Name: IRF2804STRR
Brand: Infineon Technologies
SKU: IRF2804STRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF2804STRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF2804STRR.pdf

Description:: MOSFET N-CH 40V 75A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:7,815

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Product details

Overview

IRF2804STRR from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode Power MOSFET in TO-220AB package, rated for 40 V V_DS, 75 A I_D (continuous), and 3.3 mΩ R_DS(on) @ V_GS = 10 V. It serves as a high-current, low-loss main switch in DC-DC converters, motor drive half-bridges, and battery protection circuits.

For engineers reviewing the IRF2804STRR datasheet, IRF2804STRR pinout, IRF2804STRR application, or IRF2804STRR equivalent, key selection criteria include its 40 V blocking voltage, 75 A continuous current capability, low gate charge (Q_g = 132 nC), fast switching performance, and compatibility with standard 10 V gate drivers in industrial power stages.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-assisted channel design to achieve low R_DS(on) while maintaining robust avalanche energy rating (E_AS = 520 mJ). Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, ensuring reliable turn-on with 5 V logic-level signals when used with appropriate gate drive margin.

The device features integrated body diode with reverse recovery time t_rr = 120 ns and Q_rr = 45 nC, enabling efficient synchronous rectification and hard-switched operation up to 100 kHz in buck converters and H-bridge inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage; suitable for 24 V nominal bus systems with transient margin.
I_D (continuous)	75 A @ T_C = 25 °C - Continuous drain current rating at case temperature; derates to ~45 A at 100 °C case.
R_DS(on)	3.3 mΩ @ V_GS = 10 V - On-resistance directly determines conduction loss; enables <1 W loss at 50 A.
Q_g	132 nC - Total gate charge; defines minimum gate driver current needed for 100 ns switching transitions.
E_AS	520 mJ - Single-pulse avalanche energy rating; supports non-clamped inductive switching without failure.
t_rr	120 ns - Body diode reverse recovery time; limits switching loss during commutation in bridge topologies.

Pinout & Package

IRF2804STRR is housed in a TO-220AB package with isolated tab (non-conductive mounting surface), 3-pin configuration, and standard leadform for through-hole PCB mounting.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal connected to MOSFET die substrate	Electrically tied to drain; requires insulating washer if mounted to heatsink at different potential.
Source	Reference node for gate drive and current return path	Low-inductance connection point for source loop; critical for EMI control in high-di/dt applications.
Gate	Control electrode modulating channel conductivity	High-impedance input requiring 10 V for full enhancement; sensitive to ESD and ringing without proper RC snubbing.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	3.3 mΩ enables <1.25 W conduction loss at 60 A, reducing thermal load in compact power modules.
High current rating	75 A continuous current supports high-power motor drives without parallel devices in 24 V systems.
Robust avalanche capability	520 mJ single-pulse E_AS allows safe operation under inductive load switching without external clamping.
Fast body diode	120 ns t_rr and 45 nC Q_rr minimize dead-time losses and improve efficiency in synchronous rectification.

Applications

DC-DC Buck Converter

Brushed DC Motor Drive

Use Scenario: 24 V input to 5–12 V output step-down converter delivering up to 60 A.

IC Role / Device Role / Timing Role: High-side main switch handling high peak currents and repetitive hard switching.

Use Value: Low R_DS(on) reduces conduction loss by >30% vs. comparable 50 mΩ MOSFETs, improving full-load efficiency to >94%.

Use Scenario: H-bridge driver for 24 V brushed motors in industrial actuators and robotic joints.

IC Role / Device Role / Timing Role: Low-side and high-side switching element controlling direction and PWM speed regulation.

Use Value: Fast body diode and low Q_g enable clean 20 kHz PWM with minimal shoot-through risk and reduced gate drive power.

Battery Protection Circuit

UPS Inverter Stage

Use Scenario: Bidirectional current sensing and overcurrent cutoff in 24 V Li-ion battery packs.

IC Role / Device Role / Timing Role: Main power FET in charge/discharge path with integrated overtemperature shutdown.

Use Value: Low R_DS(on) ensures <50 mV sense voltage at 15 A, simplifying current monitoring without shunt resistors.

Use Scenario: Full-bridge inverter converting 48 V DC bus to 120/230 V AC for line-interactive UPS systems.

IC Role / Device Role / Timing Role: Switching device in low-voltage DC side of transformer-isolated inverter stage.

Use Value: High avalanche rating withstands flyback transients during grid sync loss, eliminating need for external TVS clamps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF40	R_DS(on) = 5.5 mΩ (higher), Q_g = 120 nC (lower), E_AS = 380 mJ (lower)	Less efficient at high current; better suited for lower-frequency (<50 kHz) switching where gate drive loss dominates.	Prefer when gate drive capability is limited but thermal margin exists.
IXTH75N40L2	R_DS(on) = 3.0 mΩ (slightly lower), Q_g = 158 nC (higher), TO-247 package (larger footprint)	Higher peak current capability (85 A), but requires larger PCB area and more complex thermal layout.	Choose when maximum efficiency is critical and board space permits TO-247 mounting.

Compared with STP75NF40 and IXTH75N40L2, IRF2804STRR delivers optimal balance of low conduction loss, manageable gate drive demand, and TO-220 manufacturability-making it preferred for cost-sensitive, space-constrained 24 V industrial power stages.

Availability

IRF2804STRR is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, battery management systems, and uninterruptible power supplies requiring stable component supply across production lifecycles.

Supply support for IRF2804STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF2804STRR belongs to Infineon's legacy HEXFET Power MOSFET product line, engineered for high-efficiency, high-reliability switching in 24–48 V industrial and transportation power systems.

FAQ

Is IRF2804STRR logic-level compatible?

No. IRF2804STRR has a gate threshold voltage range of 2.0–4.0 V but is specified for full enhancement at V_GS = 10 V. It is not guaranteed to deliver rated R_DS(on) at 5 V and requires a 10 V gate driver for optimal performance.

What is the maximum junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C. For reliable long-term operation, junction temperature should be maintained ≤150 °C under worst-case ambient and power dissipation conditions, per Infineon's reliability guidelines.

Does IRF2804STRR have built-in ESD protection?

No. IRF2804STRR lacks on-die ESD protection structures. Gate terminals must be handled with standard ESD precautions, and external gate protection (e.g., 10 Ω series resistor + 12 V Zener clamp) is recommended in automated assembly and field environments.

Can IRF2804STRR be paralleled with identical units?

Yes-its positive temperature coefficient of R_DS(on) enables stable current sharing. Use matched gate resistors, symmetrical PCB layout, and shared heatsinking to ensure thermal uniformity and avoid current imbalance above 100 A total.

IRF2804STRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 240 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6450 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 330W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF2804STRR FAQ

1.How can I place an order for IRF2804STRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF2804STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF2804STRR reliable?

The price and inventory of IRF2804STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF2804STRR is usually 5 days.

3.What payment methods are accepted for IRF2804STRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF2804STRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF2804STRR?

IRF2804STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF2804STRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF2804STRR?

For technical support, including IRF2804STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF2804STRR requirements.

6.How does Aetrix verify that IRF2804STRR is sourced from the original manufacturer or authorized distributors?

All IRF2804STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF2804STRR meets industry standards.

7.What is the process for return or replacement of IRF2804STRR?

All IRF2804STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF2804STRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF2804STRR part is unused and in its original packaging.

Return procedure for IRF2804STRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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