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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF2804STRL

Name: IRF2804STRL
Brand: Infineon Technologies
SKU: IRF2804STRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF2804STRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF2804STRL.pdf

Description:: MOSFET N-CH 40V 75A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:6,812

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Product details

Overview

IRF2804STRL from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, rated for 40 V V_DS, 75 A continuous drain current at T_C = 25°C, and 3.3 mΩ typical R_DS(on) at V_GS = 10 V. It serves as a high-current, low-loss main switch in DC-DC converters, motor drives, and battery protection circuits.

For engineers reviewing the IRF2804STRL datasheet, IRF2804STRL pinout, IRF2804STRL application, or IRF2804STRL equivalent, key selection criteria include its 40 V blocking voltage, 3.3 mΩ on-resistance at 10 V gate drive, SOA compliance up to 100 µs, avalanche-rated ruggedness, and D2PAK thermal performance under forced-air or PCB copper heatsinking.

Technical Context

This MOSFET uses planar silicon process with optimized cell pitch and trench-assisted source interconnect to achieve low R_DS(on) × Q_g figure-of-merit. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, enabling compatibility with 3.3 V and 5 V logic-level controllers when operated with sufficient gate drive strength.

The device features fully characterized safe operating area (SOA) up to 100 µs pulse width, specified for both linear and switching operation, and is 100% avalanche tested to 120 mJ (E_AS) at T_J = 25°C - critical for inductive load commutation and fault tolerance in power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-to-source blocking voltage; defines upper limit for bus voltage in 12 V/24 V automotive and industrial DC systems.
R_DS(on) @ V_GS = 10 V	3.3 mΩ (typ), 4.5 mΩ (max) - Enables <1 W conduction loss at 75 A, supporting high-efficiency synchronous rectification and PWM switching.
I_D (continuous) @ T_C = 25°C	75 A - Sustained current capability with adequate heatsinking; derates to ~45 A at T_C = 100°C per datasheet curve.
Q_g (total gate charge)	140 nC (typ) - Determines gate driver power requirement and switching transition time; impacts E_SW in hard-switched topologies.
E_AS	120 mJ (min) - Single-pulse avalanche energy rating; ensures robustness during inductive turn-off transients without external snubbers.
T_J max	175 °C - Maximum junction temperature; supports operation in sealed enclosures or high-ambient environments with proper thermal design.

Pinout & Package

IRF2804STRL is housed in a surface-mount D2PAK (TO-263) package with three terminals: Gate (G), Drain (D), and Source (S). The drain is internally connected to the exposed metal tab for low-inductance, high-current path and thermal conduction to the PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives voltage-controlled signal to modulate channel conductivity; requires ≥10 V for full enhancement and minimal R_DS(on).
Drain (D)	High-side current terminal	Connected to load or bus; electrically and thermally tied to exposed metal tab - must be isolated from other layers unless used as heatsink node.
Source (S)	Reference and return path	Serves as common reference for gate drive and current sensing; low-inductance layout essential for stable switching behavior.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	3.3 mΩ typ at V_GS = 10 V enables <1 W conduction loss at 75 A, reducing thermal stress in high-current 12–24 V systems.
100% avalanche rated	120 mJ E_AS min guarantees reliable operation during inductive turn-off without external clamping components.
D2PAK thermal interface	Exposed drain tab allows direct thermal coupling to PCB copper, achieving ~1.5°C/W θ_JA with 2 oz Cu + 2 thermal vias per mm².
Fast switching with low Q_g	140 nC total gate charge supports sub-100 ns turn-on/off times with 2 A peak gate drivers, minimizing switching losses.

Applications

Automotive DC-DC Converters

Industrial Motor Drives

Use Scenario: Step-down conversion from 24 V battery to 5 V/3.3 V for ECUs and sensors in commercial vehicles.

IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier switch operating at 200–500 kHz PWM frequency.

Use Value: 3.3 mΩ R_DS(on) reduces conduction loss by >40% vs. legacy 6–8 mΩ MOSFETs, improving efficiency from 92% to 94.5% at 30 A output.

Use Scenario: Half-bridge inverter stage driving 1–3 kW BLDC motors in HVAC blowers and conveyor systems.

IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off to minimize shoot-through risk during dead-time control.

Use Value: 120 mJ E_AS rating prevents failure during motor stall or rapid deceleration events where back-EMF exceeds bus voltage.

Battery Protection Circuits

Server VRM High-Current Phases

Use Scenario: Bidirectional overcurrent and short-circuit protection in 48 V Li-ion battery packs for energy storage systems.

IC Role / Device Role / Timing Role: Main power FET in active OR-ing and fuseless protection architecture, controlled by analog current-sense amplifier.

Use Value: SOA compliance up to 100 µs enables precise current limiting without thermal runaway during 5× overload conditions.

Use Scenario: High-current phase leg in multiphase buck converters supplying CPU/GPU core voltage (0.8–1.2 V @ 100+ A).

IC Role / Device Role / Timing Role: Synchronous rectifier in 300–600 kHz interleaved phase, paired with SiC or GaN high-side switch.

Use Value: D2PAK package provides lower thermal resistance than TO-220, allowing 75 A continuous operation with 2-layer 2 oz Cu PCB and no external heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF40	TO-220 package, 4.2 mΩ R_DS(on), 75 A I_D, same V_DS	Higher thermal resistance (θ_JA ≈ 62°C/W vs. 40°C/W for D2PAK), less suitable for compact SMT layouts	Prefer when through-hole assembly or mechanical mounting constraints prohibit D2PAK footprint.
IXTH75N40L2	TO-247 package, 3.8 mΩ R_DS(on), 75 A I_D, logic-level V_GS(th) (1–2.5 V)	Lower gate threshold enables direct microcontroller drive but higher Q_g (220 nC) increases driver complexity	Choose when gate drive voltage is limited to 3.3 V and board space permits TO-247 thermal solution.

Compared with STP75NF40 and IXTH75N40L2, IRF2804STRL offers the lowest R_DS(on) in a surface-mount package with proven avalanche ruggedness - making it optimal for space-constrained, high-reliability 40 V power stages where thermal management relies on PCB copper rather than discrete heatsinks.

Availability

IRF2804STRL is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and battery protection circuits requiring stable component supply and long-term production continuity.

Supply support for IRF2804STRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture, qualify, and support the HEXFET product line under rigorous automotive and industrial quality standards.

The IRF2804STRL belongs to the Generation 3 HEXFET Power MOSFET family, designed specifically for high-current, low-voltage switching applications in automotive, industrial, and computing power supplies where efficiency, ruggedness, and thermal reliability are critical.

FAQ

What is the maximum pulsed drain current (I_DM) for IRF2804STRL?

The IRF2804STRL has a maximum pulsed drain current of 300 A, specified for pulse width ≤ 10 µs and duty cycle ≤ 1%. This rating assumes T_C = 25°C and accounts for transient thermal limits and bond wire integrity - not intended for continuous operation.

Does IRF2804STRL require a gate resistor for stability?

Yes - a series gate resistor (typically 5–22 Ω) is recommended to dampen parasitic oscillation caused by gate-drain capacitance (Miller effect) and PCB trace inductance. Values below 5 Ω increase risk of ringing; above 47 Ω slows switching unnecessarily and raises E_SW.

Can IRF2804STRL be paralleled with identical units?

Yes - IRF2804STRL exhibits positive temperature coefficient for R_DS(on), enabling inherent current sharing when paralleled. To ensure balance, use matched gate drive paths, symmetrical PCB layout, and shared thermal plane; derate total current by 15% for reliability.

Is IRF2804STRL halogen-free and RoHS-compliant?

Yes - IRF2804STRL meets RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21. The D2PAK package uses matte tin-plated leads and lead-free solder-compatible terminations, qualified for reflow profiles up to 260°C peak.

IRF2804STRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 240 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6450 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 330W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF2804STRL FAQ

1.How can I place an order for IRF2804STRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF2804STRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF2804STRL reliable?

The price and inventory of IRF2804STRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF2804STRL is usually 5 days.

3.What payment methods are accepted for IRF2804STRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF2804STRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF2804STRL?

IRF2804STRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF2804STRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF2804STRL?

For technical support, including IRF2804STRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF2804STRL requirements.

6.How does Aetrix verify that IRF2804STRL is sourced from the original manufacturer or authorized distributors?

All IRF2804STRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF2804STRL meets industry standards.

7.What is the process for return or replacement of IRF2804STRL?

All IRF2804STRL units undergo pre-shipment inspection (PSI). If there is an issue with IRF2804STRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF2804STRL part is unused and in its original packaging.

Return procedure for IRF2804STRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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