Infineon Technologies IRFB3307

Overview

IRFB3307 from Infineon Technologies (formerly International Rectifier) is a 75V, 120A N-channel HEXFET Power MOSFET in TO-262 (I²PAK) package, optimized for high-frequency hard-switched SMPS and synchronous rectification with 5.0 mΩ typical R_DS(on), 120 nC total gate charge, and enhanced body diode dV/dt ruggedness up to 11 V/ns. It operates reliably in UPS and telecom power stages where avalanche energy handling (510 mJ single-pulse) and low conduction loss are critical.

For engineers reviewing the IRFB3307 datasheet, IRFB3307 pinout, IRFB3307 application, or IRFB3307 equivalent, key selection criteria include its 75V V_DS rating, 5.0 mΩ on-resistance at 10V V_GS, 11 V/ns diode recovery dv/dt capability, 38–57 ns reverse recovery time, and TO-262 thermal resistance of 0.61°C/W junction-to-case - all essential for high-efficiency, high-reliability power switching designs.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with fully characterized avalanche SOA and thermally robust die attach. Its gate structure delivers improved dynamic dV/dt immunity and reduced Miller charge (46 nC), enabling stable operation under fast transient conditions in resonant and phase-shifted topologies.

The integrated body diode exhibits low V_SD (1.3 V max), controlled reverse recovery (Q_rr = 65–98 nC), and high dI/dt capability (530 A/μs), making it suitable for synchronous rectification where diode conduction and commutation losses dominate system efficiency.

Key Specifications

Pinout & Package

IRFB3307 uses the TO-262 (I²PAK) surface-mount-compatible package with isolated drain tab, offering mechanical robustness and thermal performance comparable to TO-220AB but optimized for automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP120N75F7 and IXTH120N075, IRFB3307 offers superior avalanche ruggedness (510 mJ vs. unspecified/420 mJ) and optimized TO-262 thermal-mechanical balance - making it the preferred choice for high-reliability, high-dv/dt industrial power stages where both conduction efficiency and transient survivability are design-critical.

Availability

IRFB3307 is available at Aetrix Electronics and suitable for telecom DC-DC converters, uninterruptible power supplies, and industrial motor drives requiring stable component supply, long-lifecycle support, and traceable sourcing for production programs.

Supply support for IRFB3307 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.

IRFB3307 belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial, telecom, and computing power supplies where ruggedness, low R_DS(on), and fast switching are mandatory.

FAQ

What is the maximum continuous drain current for IRFB3307 at 100°C case temperature?

The maximum continuous drain current for IRFB3307 at T_C = 100°C is 84 A, derated from 120 A at 25°C per the linear derating factor of 1.3 W/°C and thermal resistance limit. This reflects package current limitation rather than silicon capability, as the die supports higher current under adequate cooling.

Does IRFB3307 have a specified repetitive avalanche rating?

IRFB3307 does not specify a formal repetitive avalanche energy rating (E_AR) in its datasheet. Only single-pulse avalanche energy (E_AS = 510 mJ) is characterized. Repetitive avalanche operation must be validated per AN-1005 using thermal impedance curves and pulse parameters to ensure junction temperature remains below 175°C.

Can IRFB3307 be used in surface-mount assembly processes?

Yes - IRFB3307 uses the TO-262 (I²PAK) package, which is explicitly designed for surface-mount reflow soldering. Unlike TO-220AB, TO-262 has gull-wing leads compatible with standard SMT pick-and-place and reflow profiles, though thermal pad under the drain tab requires proper stencil design and solder paste volume control.

What is the significance of C_{oss eff.}(TR) = 700 pF in switching behavior?

C_{oss eff.}(TR) = 700 pF represents the fixed capacitance that replicates the actual time required to charge C_oss from 0 to 80% of V_DS. It directly determines turn-off delay and voltage rise time during hard switching - a lower value would reduce switching loss, while this 700 pF value balances speed and EMI in 75V-class power stages.