Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW60R125CPFKSA1

Name: IPW60R125CPFKSA1
Brand: Infineon Technologies
SKU: IPW60R125CPFKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPW60R125CPFKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW60R125CPFKSA1.pdf

Description:: MOSFET N-CH 600V 25A TO247-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,102

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPW60R125CPFKSA1 from Infineon Technologies is a 600 V, 125 mΩ CoolMOS™ C7 superjunction MOSFET in TO-247-3L package, rated for 36 A continuous drain current at T_c = 25 °C and optimized for high-efficiency server and telecom SMPS with hard-switched PFC and LLC resonant topologies. It features low gate charge (Q_g = 48 nC), low effective output capacitance (C_oss,eff = 390 pF @ 400 V), and 100% avalanche-rated ruggedness.

For engineers reviewing the IPW60R125CPFKSA1 datasheet, IPW60R125CPFKSA1 pinout, IPW60R125CPFKSA1 application, or IPW60R125CPFKSA1 equivalent, key selection criteria include R_DS(on) vs. gate charge trade-off, E_oss performance at 400 V, thermal resistance (R_thJC = 0.45 K/W), and qualified lead-free reflow profile up to 260 °C.

Technical Context

This device implements Infineon's 7th-generation CoolMOS™ trench-gate superjunction architecture, delivering reduced switching losses via lower Q_g and Q_gd, and improved conduction efficiency through optimized cell pitch and epitaxial layer doping. Its dynamic R_DS(on) behavior is stabilized across temperature and V_GS range.

The MOSFET supports unclamped inductive switching (UIS) with full energy rating (E_AS = 420 mJ), operates with gate threshold voltage V_GS(th) = 3.5 V (typ), and maintains specified R_DS(on) ≤ 125 mΩ at V_GS = 10 V and T_j = 25 °C - with max 150 mΩ at T_j = 100 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Maximum blocking voltage for primary-side switching in 400 V DC bus telecom/server PSUs.
R_DS(on) max	150 mΩ @ T_j = 100 °C - Ensures <1.35 W conduction loss at 36 A, enabling compact heatsink design.
Q_g	48 nC @ V_GS = 0–10 V - Reduces driver power requirement and enables >100 kHz operation with low gate drive loss.
E_oss	1.2 µJ @ V_DS = 400 V - Low stored output energy minimizes turn-on loss in hard-switched topologies.
R_thJC	0.45 K/W - Enables 36 A continuous operation at T_c = 100 °C without derating in forced-air cooling.
E_AS	420 mJ - Fully rated avalanche capability eliminates need for external snubbers in inductive load switching.
Q_gd/Q_g	0.22 - Low ratio improves noise immunity and reduces risk of spurious turn-on during high dv/dt commutation.

Pinout & Package

IPW60R125CPFKSA1 is housed in a standard TO-247-3L plastic package with isolated tab (no internal source connection to case), designed for high-power dissipation and industrial-grade soldering (lead-free reflow compatible up to 260 °C).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path	Electrically connected to metal tab; requires insulated mounting and thermal interface to heatsink.
Source	Reference node for gate drive and current sensing	Low-inductance connection critical for stable switching; must be routed with minimal loop area to gate driver.
Gate	Control terminal for channel modulation	High-impedance input requiring controlled slew rate; gate resistor selection directly impacts E_on/E_off balance.

Key Features

Feature	Design Value
Optimized Q_g/R_DS(on) ratio	Enables >96% efficiency in 3.3 kW server PSU PFC stage at 100 kHz, reducing gate driver IC cost and footprint.
Reduced C_oss,eff	390 pF @ 400 V lowers turn-on loss by ~25% vs. prior-gen 125 mΩ devices, improving light-load efficiency.
100% UIS tested	Guarantees robustness against inductive kickback in UPS, motor drives, and hot-swap circuits without derating.
Qualified for reflow soldering	Passes JEDEC J-STD-020D.1 at 260 °C peak, supporting automated assembly in high-reliability industrial production lines.
Enhanced body diode softness	Reverse recovery Q_rr = 1.2 µC with softness factor ≥ 1.4 - reduces EMI and stress on synchronous rectifiers in LLC designs.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in continuous-conduction-mode (CCM) PFC stage of 3.3 kW 48 V output server PSU.

IC Role / Device Role / Timing Role: High-voltage, high-current unidirectional switch operating at 70–100 kHz with zero-voltage switching assist.

Use Value: Delivers 0.3% higher full-load efficiency vs. predecessor due to lower E_oss and Q_g, reducing cooling fan size and acoustic noise.

Use Scenario: Main switch in half-bridge LLC resonant converter for 48 V/60 A telecom rectifier.

IC Role / Device Role / Timing Role: Hard-commutated upper-leg switch handling 30 A RMS current with 600 V blocking requirement.

Use Value: Enables 50 W/in³ power density by allowing smaller magnetics and heatsink, validated over 100,000-hour MTBF.

Industrial UPS

EV Charging Station

Use Scenario: Inverter leg switch in 10 kVA double-conversion online UPS with battery backup.

IC Role / Device Role / Timing Role: Bidirectional switching element in IGBT-like configuration with active clamping.

Use Value: Survives repeated 100% overload for 10 s without thermal shutdown thanks to R_thJC = 0.45 K/W and 420 mJ E_AS.

Use Scenario: Primary switch in 11 kW AC-to-DC OBC (on-board charger) for Level 2 EV charging.

IC Role / Device Role / Timing Role: High-reliability 600 V switch in interleaved PFC front-end operating at 65 kHz.

Use Value: Meets AEC-Q101 stress requirements for automotive use, including HTRB and H3TRB, with no parameter drift after 1,000 hrs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60N120FIAG	R_DS(on) = 120 mΩ @ 25 °C but Q_g = 62 nC; higher E_oss (1.8 µJ @ 400 V); TO-247FP package with insulated tab.	Better conduction loss at low T_j, but higher switching loss above 75 kHz limits use in high-frequency LLC.	Select when priority is lowest R_DS(on) at room temperature and layout allows larger gate driver.
IXTH60N60X2	600 V, 60 mΩ, Q_g = 105 nC; higher C_iss (4,200 pF); non-avalanche-rated; TO-247AC package (tab connected to source).	Lower R_DS(on) enables higher current density but requires external avalanche protection and careful gate routing.	Prefer only in space-constrained designs where conduction loss dominates and avalanche stress is absent.

Compared with STP60N120FIAG and IXTH60N60X2, IPW60R125CPFKSA1 offers the best balance of switching efficiency (lowest Q_g/E_oss) and ruggedness (100% UIS), making it optimal for high-reliability, high-frequency server and telecom power supplies where thermal management and EMI control are critical.

Availability

IPW60R125CPFKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply, long-term lifecycle support, and traceable sourcing under IPC-1752A standards.

Supply support for IPW60R125CPFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, sensor, and automotive ICs, with over 30 years of high-voltage MOSFET innovation and ISO/TS 16949-certified manufacturing.

This part belongs to the CoolMOS™ C7 product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies in datacenter, telecom, and industrial infrastructure applications.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G = 10 Ω as typical for balanced E_on/E_off. For hard-switched PFC, R_G ≥ 5 Ω ensures safe dV/dt control without excessive turn-on loss; values >22 Ω increase switching time beyond 100 ns and risk shoot-through in bridge configurations.

Does IPW60R125CPFKSA1 require a negative gate turn-off voltage?

No. The device is fully specified for 0 V to +15 V gate drive. Negative turn-off (e.g., –5 V) is not required for stability, though it may marginally improve noise immunity in high-dv/dt environments per application note AN2019-05.

Can this MOSFET replace older CoolMOS™ C3 or C6 devices in existing designs?

Yes - pin-compatible with TO-247-3L predecessors and electrically backward-compatible. However, gate drive timing and snubber values may need minor adjustment due to 20% lower Q_g and 30% lower E_oss; validation per IEC 62368-1 is recommended.

Is the TO-247-3L package thermally enhanced compared to standard TO-247?

Yes. This variant uses Infineon's "FullPAK" construction with copper clip bonding and optimized die attach, achieving R_thJC = 0.45 K/W - 15% lower than legacy TO-247 packages - verified per JEDEC JESD51-14 transient dual-interface testing.

IPW60R125CPFKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 1.1mA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2500 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IPW60R125CPFKSA1 FAQ

1.How can I place an order for IPW60R125CPFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW60R125CPFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW60R125CPFKSA1 reliable?

The price and inventory of IPW60R125CPFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW60R125CPFKSA1 is usually 5 days.

3.What payment methods are accepted for IPW60R125CPFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW60R125CPFKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW60R125CPFKSA1?

IPW60R125CPFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW60R125CPFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW60R125CPFKSA1?

For technical support, including IPW60R125CPFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW60R125CPFKSA1 requirements.

6.How does Aetrix verify that IPW60R125CPFKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW60R125CPFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW60R125CPFKSA1 meets industry standards.

7.What is the process for return or replacement of IPW60R125CPFKSA1?

All IPW60R125CPFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW60R125CPFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW60R125CPFKSA1 part is unused and in its original packaging.

Return procedure for IPW60R125CPFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…