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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
H5N2513PL-E N-CHANNEL POWER MOSFET Renesas Electronics Corporation	1,189	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
G3R40MT12J SIC MOSFET N-CH 75A TO263-7 GeneSiC Semiconductor	421	RFQ	Datasheet	G3R™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	75A (Tc)	15V	48mOhm @ 35A, 15V	2.7V @ 18mA (Typ)	106 nC @ 15 V	±15V	2929 pF @ 800 V	-	374W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7
FCH085N80-F155 MOSFET N-CH 800V 46A TO247 onsemi	437	RFQ	Datasheet	SuperFET® II	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	46A (Tc)	10V	85mOhm @ 23A, 10V	4.5V @ 4.6mA	255 nC @ 10 V	±20V	10825 pF @ 100 V	-	446W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
NVBGS4D1N15MC MOSFET N-CH 150V 20A/185A D2PAK onsemi	364	RFQ	Datasheet	-	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	150 V	20A (Ta), 185A (Tc)	8V, 10V	4.1mOhm @ 104A, 10V	4.5V @ 574µA	88.9 nC @ 10 V	±20V	7285 pF @ 75 V	-	3.7W (Ta), 316W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263 (D2PAK)
S3M0025120T MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	200	RFQ	Datasheet	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	77A (Tc)	18V	32mOhm @ 48A, 18V	4V @ 20mA	175 nC @ 18 V	+22V, -8V	3519 pF @ 1000 V	-	517W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TOLL
H5N5011PL-E N-CHANNEL POWER MOSFET Renesas Electronics Corporation	1,086	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
G2R1000MT33J SIC MOSFET N-CH 4A TO263-7 GeneSiC Semiconductor	1,853	RFQ	Datasheet	G2R™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	3300 V	4A (Tc)	20V	1.2Ohm @ 2A, 20V	3.5V @ 2mA	21 nC @ 20 V	+20V, -5V	238 pF @ 1000 V	-	74W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7
FCA76N60N MOSFET N-CH 600V 76A TO3PN onsemi	1,348	RFQ	Datasheet	SupreMOS™	TO-3P-3, SC-65-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	76A (Tc)	10V	36mOhm @ 38A, 10V	4V @ 250µA	285 nC @ 10 V	±30V	12385 pF @ 100 V	-	543W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3PN
E3M0045065K SIC, MOSFET, 45M, 650V, TO-247-4 Wolfspeed, Inc.	359	RFQ	Datasheet	E	TO-247-4	Tube	Last Time Buy	N-Channel	SiCFET (Silicon Carbide)	650 V	46A (Tc)	15V	60mOhm @ 17.6A, 15V	3.6V @ 4.84mA	64 nC @ 15 V	+19V, -8V	1593 pF @ 400 V	-	150W (Tc)	-40°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
C3M0032120J2-TR MOSFET N-CH 1200V 68A TO263 Wolfspeed, Inc.	575	RFQ	-	C3M™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	68A (Tc)	15V	-	3.6V @ 11.5mA	111 nC @ 15 V	-8V, +19V	3424 pF @ 1000 V	-	277W (Tc)	-40°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7
4AK17-91 N-CHANNEL POWER MOSFET Renesas Electronics Corporation	29,649	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FF12040J-7 SICFET N-CH 1200V 45A TO-263-7L fastSiC	278	RFQ	Datasheet	Falcon	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	45A (Tc)	15V, 18V	56mOhm @ 20A, 18V	2.5V @ 40mA (Typ)	117 nC @ 800 V	+18V, -8V	3129 pF @ 800 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7L
IXFT16N120P MOSFET N-CH 1200V 16A TO268 Littelfuse Inc.	349	RFQ	Datasheet	HiPerFET™, Polar	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	16A (Tc)	10V	950mOhm @ 500mA, 10V	6.5V @ 1mA	120 nC @ 10 V	±30V	6900 pF @ 25 V	-	660W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268AA
HF9969-91 AUTOMOTIVE POWER MOSFET Renesas Electronics Corporation	2,400	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFK110N07 MOSFET N-CH 70V 110A TO264AA IXYS	1,225	RFQ	Datasheet	HiPerFET™	TO-264-3, TO-264AA	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	70 V	110A (Tc)	10V	6mOhm @ 55A, 10V	4V @ 8mA	480 nC @ 10 V	±20V	9000 pF @ 25 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)
IGO60R070D1AUMA1 GANFET N-CH 600V 31A 20DSO Infineon Technologies	7,476	RFQ	Datasheet	CoolGaN™	20-PowerSOIC (0.433", 11.00mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	GaNFET (Gallium Nitride)	600 V	31A (Tc)	-	-	1.6V @ 2.6mA	-	-10V	380 pF @ 400 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-DSO-20-85
2SK1971-E N-CHANNEL POWER MOSFET Renesas Electronics Corporation	1,331	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK1947-E N-CHANNEL POWER MOSFET Renesas Electronics Corporation	446	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCTWA30N120 IC POWER MOSFET 1200V HIP247 STMicroelectronics	294	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	45A (Tc)	20V	100mOhm @ 20A, 20V	3.5V @ 1mA (Typ)	105 nC @ 20 V	+25V, -10V	1700 pF @ 400 V	-	270W (Tc)	-55°C ~ 200°C (TJ)	-	-	Through Hole	HiP247™ Long Leads
AS1M025120P N-CHANNEL SILICON CARBIDE POWER ANBON SEMICONDUCTOR (INT'L) LIMITED	124	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	90A (Tc)	20V	34mOhm @ 50A, 20V	4V @ 15mA	195 nC @ 20 V	+25V, -10V	3600 pF @ 1000 V	-	463W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3

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