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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TSM60NB041PW C1G MOSFET N-CHANNEL 600V 78A TO247 Taiwan Semiconductor Corporation	2,484	RFQ	-	-	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	78A (Tc)	10V	41mOhm @ 21.7A, 10V	4V @ 250µA	139 nC @ 10 V	±30V	6120 pF @ 100 V	-	446W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247
2SK1968-E N-CHANNEL POWER MOSFET Renesas Electronics Corporation	181	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT3105KRC14 SICFET N-CH 1200V 24A TO247-4L Rohm Semiconductor	102	RFQ	Datasheet	-	TO-247-4	Tube	Last Time Buy	N-Channel	SiCFET (Silicon Carbide)	1200 V	24A (Tc)	18V	137mOhm @ 7.6A, 18V	5.6V @ 3.81mA	51 nC @ 18 V	+22V, -4V	574 pF @ 800 V	-	134W	175°C (TJ)	-	-	Through Hole	TO-247-4L
STW70N60DM6-4 MOSFET N-CH 600V 62A TO247-4 STMicroelectronics	150	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	62A (Tc)	10V	42mOhm @ 31A, 10V	4.75V @ 250µA	99 nC @ 10 V	±25V	4360 pF @ 100 V	-	390W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-4
SCT3060ARC14 SICFET N-CH 650V 39A TO247-4L Rohm Semiconductor	344	RFQ	Datasheet	-	TO-247-4	Tube	Last Time Buy	N-Channel	SiCFET (Silicon Carbide)	650 V	39A (Tc)	18V	78mOhm @ 13A, 18V	5.6V @ 6.67mA	58 nC @ 18 V	+22V, -4V	852 pF @ 500 V	-	165W	175°C (TJ)	-	-	Through Hole	TO-247-4L
FCH041N60F-F085 MOSFET N-CH 600V 76A TO247-3 onsemi	444	RFQ	Datasheet	SuperFET® II	TO-247-3	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	600 V	76A (Tc)	10V	41mOhm @ 38A, 10V	5V @ 250µA	347 nC @ 10 V	±20V	10900 pF @ 25 V	-	595W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3
NTBGS001N06C POWER MOSFET, 60 V, 1.1 M?, 342 onsemi	546	RFQ	Datasheet	-	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	42A (Ta), 342A (Tc)	10V, 12V	1.1mOhm @ 112A, 12V	4V @ 562µA	139 nC @ 10 V	±20V	11110 pF @ 30 V	-	3.7W (Ta), 245W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
STL42N65M5 MOSFET N-CH 650V 4A PWRFLAT HV STMicroelectronics	2,915	RFQ	Datasheet	MDmesh™ V	8-PowerVDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	4A (Ta), 34A (Tc)	10V	79mOhm @ 16.5A, 10V	5V @ 250µA	100 nC @ 10 V	±25V	4650 pF @ 100 V	-	3W (Ta), 208W (Tc)	150°C (TJ)	-	-	Surface Mount	PowerFlat™ (8x8) HV
STFW60N65M5 MOSFET N-CH 650V 46A ISOWATT STMicroelectronics	282	RFQ	Datasheet	MDmesh™ V	TO-3P-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	46A (Tc)	10V	59mOhm @ 23A, 10V	5V @ 250µA	139 nC @ 10 V	±25V	6810 pF @ 100 V	-	79W (Tc)	150°C (TJ)	-	-	Through Hole	TO-3PF
FCH76N60N POWER FIELD-EFFECT TRANSISTOR, 7 Fairchild Semiconductor	170	RFQ	Datasheet	SupreMOS™	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	600 V	76A (Tc)	10V	36mOhm @ 38A, 10V	4V @ 250µA	285 nC @ 10 V	±30V	12385 pF @ 100 V	-	543W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247
R6046ANZ1C9 MOSFET N-CH 600V 46A TO247 Rohm Semiconductor	444	RFQ	Datasheet	-	TO-247-3	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	46A (Tc)	10V	90mOhm @ 23A, 10V	4.5V @ 1mA	150 nC @ 10 V	±30V	6000 pF @ 25 V	-	120W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247
RJK60S5DPN-00#T2 N-CHANNEL POWER MOSFET Renesas Electronics Corporation	138,686	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RJK60S5DPK-M0#T0 MOSFET N-CH 600V 20A TO3PSG Renesas Electronics Corporation	68,097	RFQ	Datasheet	-	TO-3P-3, SC-65-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Tc)	-	178mOhm @ 10A, 10V	-	27 nC @ 10 V	-	1600 pF @ 25 V	-	-	-	-	-	Through Hole	TO-3PSG
RJK60S5DPE-00#J3 MOSFET N-CH 600V 20A 4LDPAK Renesas Electronics Corporation	40,000	RFQ	Datasheet	-	SC-83	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Tc)	-	178mOhm @ 10A, 10V	-	27 nC @ 10 V	-	1600 pF @ 25 V	-	125W (Tc)	150°C (TJ)	-	-	Surface Mount	LDPAK
RJK60S5DPP-E0#T2 MOSFET N-CH 600V 20A TO220FP Renesas Electronics Corporation	226	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Tc)	-	178mOhm @ 10A, 10V	-	27 nC @ 10 V	-	1600 pF @ 25 V	-	33.7W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220FP
C3M0040120J2-TR WOLFSPEED SIC, MOSFET Wolfspeed, Inc.	589	RFQ	-	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	TO-263-7
CGD65A055S2-T07 650V GAN HEMT, 55MOHM, DFN8X8. W Cambridge GaN Devices	674	RFQ	Datasheet	ICeGaN™	16-PowerVDFN	Cut Tape (CT)	Active	-	GaNFET (Gallium Nitride)	650 V	27A (Tc)	12V	77mOhm @ 2.2A, 12V	4.2V @ 10mA	6 nC @ 12 V	+20V, -1V	-	Current Sensing	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	16-DFN (8x8)
SCT3080KRC14 SICFET N-CH 1200V 31A TO247-4L Rohm Semiconductor	270	RFQ	Datasheet	-	TO-247-4	Tube	Last Time Buy	N-Channel	SiCFET (Silicon Carbide)	1200 V	31A (Tc)	18V	104mOhm @ 10A, 18V	5.6V @ 5mA	60 nC @ 18 V	+22V, -4V	785 pF @ 800 V	-	165W	175°C (TJ)	-	-	Through Hole	TO-247-4L
N3T035MP120D 1200 V, 76A SIC MOSFET, TO-247 NoMIS Power	652	RFQ	Datasheet	1200	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	76A	20V	45mOhm @ 30A, 20V	3V @ 15mA	126 nC @ 20 V	+20V, -5V	2204 pF @ 800 V	-	319W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3L
4AM17-91 POWER N AND P CHANNEL MOSFETS Renesas Electronics Corporation	38,812	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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