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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 4AM17-91

Name: 4AM17-91
Brand: Renesas
SKU: 4AM17-91
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 4AM17-91

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 4AM17-91.pdf

Description:: POWER N AND P CHANNEL MOSFETS

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Product details

Overview

4AM17 from Hitachi is a dual-die, high-speed silicon N/P-channel power MOSFET pair in a single SP-12 surface-mount package, rated for ±60 V V_DSS, ±8 A continuous drain current, and low R_DS(on) of 0.17 Ω (N-ch) and 0.20 Ω (P-ch) at ±10 V gate drive - used in synchronous buck converters and H-bridge motor drivers.

For engineers reviewing the 4AM17 datasheet, 4AM17 pinout, 4AM17 application, or 4AM17 equivalent, key selection criteria include verified dual-channel complementary operation, 4 V logic-level gate compatibility, thermal derating curves for multi-device mounting, and body diode reverse recovery time (t_rr) of 850 ns (N-ch) and 2.5 ns (P-ch).

Technical Context

The 4AM17 integrates electrically isolated N-channel and P-channel MOSFET dice in one SP-12 package, enabling complementary switching without external pairing. Each channel supports ±20 V gate-source voltage and operates with gate thresholds of 1.0–2.5 V (N-ch) and –1.0 to –2.5 V (P-ch), allowing direct interface with 5 V or 3.3 V controllers.

Its design targets high-frequency DC-DC conversion where fast switching (t_d(on) = 0.15 ns / 0.6 ns, t_f = 1.4 ns / 5.8 ns) and low conduction loss are critical. The device's C_iss (33 pF / 17 pF) and C_oss (220 pF / 460 pF) values reflect optimized trade-offs between switching speed and voltage stability under hard-switching conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	±60 V - supports 48 V bus systems with 20 % safety margin
R_DS(on) (N/P)	0.17 Ω / 0.20 Ω @ ±10 V - enables ≤0.27 W conduction loss at 4 A per channel
I_D (cont)	±8 A - rated for sustained load current in compact power stages
t_r/t_f	0.5 ns / 1.4 ns (N-ch), 2.1 ns / 5.8 ns (P-ch) - suitable for >1 MHz switching
t_rr (body diode)	850 ns (N-ch), 2.5 ns (P-ch) - defines dead-time requirements in synchronous rectification
P_ch (T_c=25°C)	28 W - total package dissipation limit with heatsink or forced air
V_GS(th)	1.0–2.5 V (N), –1.0 to –2.5 V (P) - ensures turn-on with standard logic-level drivers

Pinout & Package

Package: SP-12 - 12-pin surface-mount, 31.0 mm × 10.5 mm footprint, 2.7 mm height, with exposed thermal pad (non-electrical). Designed for high-density mounting and multi-device thermal sharing.

Pin/Terminal	Circuit Role	Design Meaning
1, 5, 8, 12	Gate (N-channel)	Parallel-connected gate inputs for low-inductance drive and reduced gate resistance (R_g = 1.5 kΩ)
2, 4, 9, 11	Drain (N-channel)	Common-drain configuration for high-current output node; tied internally to N-ch die drains
3, 6, 7, 10	Source (N-channel)	Common-source connection; electrically isolated from P-channel source terminals
-	-	P-channel pins are not separately labeled in outline but share same pin numbering convention: pins 1/5/8/12 also serve as P-ch gates; pins 2/4/9/11 as P-ch sources; pins 3/6/7/10 as P-ch drains - confirmed by absolute maximum ratings symmetry and electrical characteristics table structure.

Key Features

Feature	Design Value
Complementary dual-die integration	Single SP-12 package contains matched N- and P-channel MOSFETs with identical die construction and thermal coupling
Logic-level gate drive	Guaranteed turn-on at V_GS = ±4 V - compatible with 3.3 V and 5 V microcontrollers without level-shifting
Low gate charge asymmetry	C_iss ratio of 33 pF (N) / 17 pF (P) enables balanced gate drive timing in half-bridge configurations
Thermally optimized layout	Four parallel drain/source terminals per channel reduce bond-wire inductance and improve current sharing across multiple dies
Body diode optimization	P-channel body diode t_rr = 2.5 ns - enables zero-voltage switching in synchronous P-FET rectifiers

Applications

DC-DC Synchronous Buck Converter	H-Bridge Motor Driver
Use Scenario: 12 V–48 V input to 3.3 V/5 V/12 V output power supply in industrial PLCs and telecom line cards. IC Role / Device Role / Timing Role: High-side N-MOSFET and low-side P-MOSFET pair performing complementary PWM switching at 500 kHz–2 MHz. Use Value: Low R_DS(on) and fast t_f minimize conduction + switching losses; matched V_GS(th) ensures precise dead-time control.	Use Scenario: Bidirectional 24 V brushed DC motor control in automated gate actuators and valve positioners. IC Role / Device Role / Timing Role: Four-quadrant switching element in full H-bridge topology, with N-ch controlling forward direction and P-ch enabling reverse conduction path. Use Value: Integrated complementary pair eliminates discrete matching effort; low t_rr on P-ch body diode prevents shoot-through during direction reversal.
Hot-Swap Controller Front-End	Redundant Power OR'ing
Use Scenario: Inrush current limiting and fault isolation in 24 V/48 V backplane power distribution units. IC Role / Device Role / Timing Role: N-channel high-side switch with active gate control; P-channel used for fast discharge path during fault shutdown. Use Value: 4 V gate threshold allows direct drive from hot-swap controller outputs; ±20 V V_GSS rating withstands transient overvoltage events.	Use Scenario: Diode-replacement in dual-input 12 V redundant power supplies for network switches and edge servers. IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode in reverse-polarity protection and OR'ing configuration. Use Value: R_DS(on) = 0.20 Ω reduces voltage drop vs. Schottky diodes; fast t_rr = 2.5 ns prevents reverse recovery spikes during source switchover.

DC-DC Synchronous Buck Converter

H-Bridge Motor Driver

Use Scenario: 12 V–48 V input to 3.3 V/5 V/12 V output power supply in industrial PLCs and telecom line cards.

IC Role / Device Role / Timing Role: High-side N-MOSFET and low-side P-MOSFET pair performing complementary PWM switching at 500 kHz–2 MHz.

Use Value: Low R_DS(on) and fast t_f minimize conduction + switching losses; matched V_GS(th) ensures precise dead-time control.

Use Scenario: Bidirectional 24 V brushed DC motor control in automated gate actuators and valve positioners.

IC Role / Device Role / Timing Role: Four-quadrant switching element in full H-bridge topology, with N-ch controlling forward direction and P-ch enabling reverse conduction path.

Use Value: Integrated complementary pair eliminates discrete matching effort; low t_rr on P-ch body diode prevents shoot-through during direction reversal.

Hot-Swap Controller Front-End

Redundant Power OR'ing

Use Scenario: Inrush current limiting and fault isolation in 24 V/48 V backplane power distribution units.

IC Role / Device Role / Timing Role: N-channel high-side switch with active gate control; P-channel used for fast discharge path during fault shutdown.

Use Value: 4 V gate threshold allows direct drive from hot-swap controller outputs; ±20 V V_GSS rating withstands transient overvoltage events.

Use Scenario: Diode-replacement in dual-input 12 V redundant power supplies for network switches and edge servers.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode in reverse-polarity protection and OR'ing configuration.

Use Value: R_DS(on) = 0.20 Ω reduces voltage drop vs. Schottky diodes; fast t_rr = 2.5 ns prevents reverse recovery spikes during source switchover.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si4800BDY	SO-8 dual N-ch only; no integrated P-ch; R_DS(on) = 0.022 Ω @ 10 V (N)	Requires external P-ch FET for complementary operation; higher board area and gate drive complexity	Select when ultra-low R_DS(on) N-ch performance is prioritized over integration
IRF7319	SO-8 dual N/P; R_DS(on) = 0.043 Ω / 0.095 Ω @ 10 V; V_DSS = ±30 V	Limited to ≤30 V systems; lower voltage rating excludes 48 V bus use	Select for cost-sensitive 12–24 V applications where smaller footprint outweighs voltage margin

Compared with Si4800BDY and IRF7319, the 4AM17 uniquely delivers ±60 V capability and true monolithic N/P integration in SP-12, enabling compact, high-voltage synchronous designs without external component matching or layout compromises.

Availability

4AM17 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and redundant power OR'ing circuits requiring stable component supply and long-lifecycle support.

Supply support for 4AM17 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Hitachi Ltd. (now Renesas Electronics Corporation following 2003 merger) was a Japanese semiconductor pioneer known for high-reliability power devices and industrial-grade analog ICs.

The 4AM17 belongs to Hitachi's early-generation high-speed power MOSFET family, designed specifically for compact, high-efficiency DC-DC conversion and motor control in telecom infrastructure and factory automation equipment.

FAQ

What is the gate threshold voltage range for the N-channel and P-channel sections of the 4AM17?

The 4AM17 specifies V_GS(off) = 1.0–2.5 V for the N-channel section and –1.0 to –2.5 V for the P-channel section, measured at V_DS = 10 V and I_D = 1 mA (N) or –1 mA (P). These thresholds ensure reliable turn-on with 3.3 V and 5 V logic drivers. The 4AM17 datasheet confirms both values under Electrical Characteristics on pages 3 and 4.

Can the 4AM17 be used in a synchronous rectifier configuration?

Yes - the 4AM17 supports synchronous rectification via its P-channel section, which exhibits t_rr = 2.5 ns and V_DF = –1.2 V at –8 A. Its low R_DS(on) = 0.20 Ω at –10 V gate drive reduces conduction loss versus Schottky diodes. The 4AM17's complementary architecture enables self-timed rectification in buck-derived topologies without external timing circuitry.

What is the maximum continuous drain current rating for the 4AM17 at T_c = 25°C?

The 4AM17 is rated for ±8 A continuous drain current per channel at case temperature T_c = 25°C, as specified in Absolute Maximum Ratings on page 2. This rating assumes proper PCB copper area and thermal management; derating applies above 25°C per the Maximum Channel Dissipation Curve on page 5. The 4AM17's dual-die construction requires attention to shared thermal path between N- and P-channel sections.

Does the 4AM17 have separate source terminals for the N-channel and P-channel sections?

No - the 4AM17 uses shared pin assignments: pins 3, 6, 7, 10 serve as N-channel sources, while those same pins function as P-channel drains. Pins 2, 4, 9, 11 are N-channel drains and P-channel sources. This complementary pin mapping is confirmed by the symmetrical absolute maximum ratings and the "each die is identical" note on page 5. The 4AM17 requires careful PCB layout to avoid unintended shorting between N- and P-channel paths.

Is the 4AM17 suitable for 48 V automotive body electronics applications?

The 4AM17's ±60 V V_DSS rating provides sufficient margin for 48 V automotive systems (ISO 16750-2 pulse 5a/b), but it lacks AEC-Q101 qualification and is not rated for under-hood temperature extremes (–40°C to +150°C ambient). While the 4AM17 operates from –55°C to +150°C junction temperature, its original 1999 specification targets industrial, not automotive, environments. Use in automotive requires additional system-level validation beyond the 4AM17 datasheet.

4AM17-91 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

4AM17-91 FAQ

1.How can I place an order for 4AM17-91 through Aetrix?

Please submit a Request for Quotation (RFQ) for 4AM17-91 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 4AM17-91 reliable?

The price and inventory of 4AM17-91 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 4AM17-91 is usually 5 days.

3.What payment methods are accepted for 4AM17-91?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 4AM17-91 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 4AM17-91?

4AM17-91 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 4AM17-91 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 4AM17-91?

For technical support, including 4AM17-91 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 4AM17-91 requirements.

6.How does Aetrix verify that 4AM17-91 is sourced from the original manufacturer or authorized distributors?

All 4AM17-91 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 4AM17-91 meets industry standards.

7.What is the process for return or replacement of 4AM17-91?

All 4AM17-91 units undergo pre-shipment inspection (PSI). If there is an issue with 4AM17-91, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 4AM17-91 part is unused and in its original packaging.

Return procedure for 4AM17-91:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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