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Renesas RJK60S5DPK-M0#T0
- Part No.:
- RJK60S5DPK-M0#T0
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-3P-3, SC-65-3
- Datasheet:
-
RJK60S5DPK-M0#T0.pdf
- Description:
- MOSFET N-CH 600V 20A TO3PSG
- Quantity:
- Payment:
- Shipping:
Inventory:68,097
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Product details
Overview
RJK60S5DPK-M0#T0 from Renesas Electronics is a 600 V, 20 A superjunction MOSFET optimized for high-speed power switching in offline SMPS, PFC stages, and industrial inverters. It delivers RDS(on) = 0.150 Ω (typ.), tf = 23 ns (typ.), and MOSFET dv/dt ruggedness of 150 V/ns at Tj = 25°C - enabling efficient, robust operation in 85–265 VAC input systems.
For engineers reviewing the RJK60S5DPK-M0#T0 datasheet, RJK60S5DPK-M0#T0 pinout, RJK60S5DPK-M0#T0 application, or RJK60S5DPK-M0#T0 equivalent, key selection criteria include its TO-3PSG package thermal performance (θch-c = 0.65°C/W), body-diode reverse recovery charge Qrr = 5.6 μC, and avalanche energy rating EAR = 1.36 mJ - critical for hard-switched flyback and resonant LLC topologies.
Technical Context
This device implements a planar superjunction structure with optimized charge balance for low conduction loss and fast switching. Its gate threshold voltage VGS(off) = 3–5 V ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity.
The integrated body diode exhibits trr = 400 ns and Irr = 25 A under di/dt = 100 A/μs conditions, supporting ZVS-capable designs. Thermal design is anchored by a channel-to-case thermal impedance of 0.65°C/W and a maximum channel temperature rating of 150°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - supports universal AC input (85–265 VAC) with ≥2× safety margin in bridge rectifier + bulk cap configurations |
| RDS(on) | 0.150 Ω typ. - enables <1.5 W conduction loss at 20 A DC, reducing heatsink requirements in 300–500 W PFC stages |
| tf | 23 ns typ. - minimizes switching transition time, lowering dynamic losses in 65–135 kHz hard-switched converters |
| Qg | 27 nC - determines gate drive power requirement (~1.35 mW per MHz at 10 V swing) for standard bipolar gate drivers |
| θch-c | 0.65°C/W - allows 192.3 W channel dissipation at Tc = 25°C, supporting high-power density without forced air |
| EAR | 1.36 mJ - defines single-pulse avalanche capability under inductive load interruption, critical for motor drive protection |
| dv/dt ruggedness | 150 V/ns - prevents spurious turn-on during high dV/dt transients in half-bridge leg commutation |
Pinout & Package
Package: TO-3PSG (RENESAS code PRSS0004ZH-A), metal-can isolated-drain package with 4-terminal configuration (dual drain leads) for enhanced thermal and current handling. Mass: 3.7 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Receives 10 V logic-level gate drive; VGS(off) = 3–5 V ensures clean turn-off with 0 V bias |
| 2 (Drain) | High-side power output | Primary high-voltage drain connection; electrically isolated from case for floating topology use |
| 3 (Source) | Power return reference | Serves as local ground reference for gate driver; ties to PCB source plane with low-inductance layout |
| 4 (Drain) | Secondary drain path | Dual-drain configuration reduces lead inductance and improves current sharing in high-frequency switching |
Key Features
| Feature | Design Value |
|---|---|
| Superjunction architecture | Enables 600 V rating with RDS(on) 40% lower than conventional VDMOS, improving efficiency in 300–600 W SMPS |
| Low Qgd/Qgs ratio | Qgd = 8.5 nC / Qgs = 10.5 nC → 0.81 ratio enhances Miller immunity and enables faster, more controllable turn-off |
| Optimized body diode | Qrr = 5.6 μC and soft recovery reduce EMI and voltage overshoot in discontinuous conduction mode (DCM) flyback |
| High dv/dt immunity | Rated 150 V/ns up to VDS = 480 V - eliminates need for external Miller clamp in most half-bridge applications |
| Thermal robustness | θch-c = 0.65°C/W and Tch = 150°C allow sustained 12.6 A operation at Tc = 100°C without derating |
Applications
| Industrial Motor Drives | Server & Telecom PSU |
|---|---|
Use Scenario: 3-phase inverter stage in 5–10 kW HVAC compressors operating at 8–16 kHz PWM frequency. IC Role / Device Role / Timing Role: High-side switching element in IGBT/MOSFET hybrid inverter leg, handling 20 A RMS phase current with 600 V bus. Use Value: Low RDS(on) and fast tf reduce total losses by ~12% vs. legacy 600 V MOSFETs, enabling passive cooling in compact enclosures. | Use Scenario: Active clamp forward or LLC resonant converter in 1.5–3 kW telecom rectifiers with 380 VDC intermediate bus. IC Role / Device Role / Timing Role: Primary-side synchronous switch managing 20 A peak current at 100–300 kHz switching frequency. Use Value: Qg = 27 nC and Ciss = 1600 pF support zero-voltage switching (ZVS) down to 50% load, improving light-load efficiency by 3–5%. |
| EV Onboard Charger (OBC) | Industrial UPS Systems |
Use Scenario: Boost PFC front-end in 6.6 kW bidirectional OBC converting 240 VAC to 400 VDC battery bus. IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch rated for 20 A DC output current at 65 kHz. Use Value: RDS(on) = 0.150 Ω limits conduction loss to ≤1.8 W, allowing thermally constrained PCB-mount heatsinking without fans. | Use Scenario: Double-conversion online UPS inverter stage delivering 10 kVA output with 20 ms transfer time. IC Role / Device Role / Timing Role: Half-bridge switching device handling 12.6 A continuous current at 10–20 kHz with high reliability demand. Use Value: EAR = 1.36 mJ and avalanche-rated construction ensure survivability during short-circuit events and grid fault conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW60N60DM6 | RDS(on) = 0.135 Ω, Qg = 32 nC, TO-247 package, no dual drain | Higher gate charge increases driver loss; single-drain layout less optimal for high-di/dt layouts | Preferred where lower RDS(on) outweighs gate drive complexity and thermal interface constraints |
| IXFH60N60X3 | RDS(on) = 0.140 Ω, tf = 25 ns, TO-247AD package, Qrr = 4.9 μC | Lower Qrr improves light-load efficiency in DCM flyback; lacks dv/dt rating spec | Selected when body-diode recovery performance is prioritized over guaranteed dv/dt immunity |
Compared with STW60N60DM6 and IXFH60N60X3, RJK60S5DPK-M0#T0 offers superior dv/dt ruggedness (150 V/ns) and dual-drain thermal management - making it preferred for high-reliability industrial inverters where layout-induced transients and thermal cycling dominate failure modes.
Availability
RJK60S5DPK-M0#T0 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, EV onboard chargers, and uninterruptible power systems requiring stable component supply across multi-year production cycles.
Supply support for RJK60S5DPK-M0#T0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal ICs for industrial, automotive, and infrastructure markets.
The RJK60S5DPK-M0#T0 belongs to Renesas' high-voltage superjunction MOSFET product line, engineered specifically for high-efficiency, high-reliability AC/DC and DC/DC conversion in industrial-grade power systems.
FAQ
What is the maximum continuous drain current rating for RJK60S5DPK-M0#T0 at 100°C case temperature?
The RJK60S5DPK-M0#T0 is rated for 12.6 A continuous drain current (ID) at Tc = 100°C, as specified in the Absolute Maximum Ratings table. This rating is limited by channel temperature (Tch ≤ 150°C) and reflects real-world thermal constraints in enclosed industrial enclosures without forced airflow. The RJK60S5DPK-M0#T0 maintains safe operation under these conditions due to its 0.65°C/W channel-to-case thermal impedance.
Does RJK60S5DPK-M0#T0 support gate drive with 5 V logic-level controllers?
No - the RJK60S5DPK-M0#T0 requires a minimum VGS of 10 V for full enhancement, with VGS(off) ranging from 3 V to 5 V. Driving it with only 5 V risks incomplete turn-on, increasing RDS(on) beyond specification and causing excessive conduction loss. The RJK60S5DPK-M0#T0 is designed for standard 10–15 V gate drivers used in industrial SMPS and motor control applications.
How does the dual-drain configuration of RJK60S5DPK-M0#T0 improve system performance?
The dual-drain (pins 2 and 4) configuration of the RJK60S5DPK-M0#T0 reduces effective lead inductance and distributes current across two parallel paths, lowering parasitic ringing and improving high-frequency stability in hard-switched topologies. This layout advantage directly enhances EMI performance and thermal spreading in the TO-3PSG package. The RJK60S5DPK-M0#T0 leverages this mechanical feature to sustain 20 A peak current with minimal voltage overshoot during fast turn-off.
What is the body-diode reverse recovery charge (Qrr) of RJK60S5DPK-M0#T0, and why does it matter?
The RJK60S5DPK-M0#T0 has a body-diode reverse recovery charge Qrr of 5.6 μC, measured at IF = 20 A, diF/dt = 100 A/μs, and VGS = 0. This parameter directly impacts switching loss and voltage spike magnitude during freewheeling transitions in flyback, LLC, and synchronous rectification circuits. A lower Qrr reduces dynamic loss and EMI - the RJK60S5DPK-M0#T0's value balances soft recovery with low conduction loss for industrial-grade reliability.
Is RJK60S5DPK-M0#T0 suitable for avalanche-prone applications like inductive load switching?
Yes - the RJK60S5DPK-M0#T0 is fully rated for repetitive avalanche operation with IAP = 5 A and EAR = 1.36 mJ under defined test conditions (Tj = 25°C, VDD = 50 V). This makes it suitable for applications involving unclamped inductive switching, such as relay driving or solenoid control, where transient energy must be absorbed internally. The RJK60S5DPK-M0#T0's avalanche capability is validated per JEDEC standards and documented in its preliminary datasheet R07DS0245EJ0500.
RJK60S5DPK-M0#T0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-3P-3, SC-65-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 178mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 27 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 1600 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-3PSG
RJK60S5DPK-M0#T0 FAQ
1.How can I place an order for RJK60S5DPK-M0#T0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK60S5DPK-M0#T0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK60S5DPK-M0#T0 reliable?
The price and inventory of RJK60S5DPK-M0#T0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK60S5DPK-M0#T0 is usually 5 days.
3.What payment methods are accepted for RJK60S5DPK-M0#T0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK60S5DPK-M0#T0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK60S5DPK-M0#T0?
RJK60S5DPK-M0#T0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK60S5DPK-M0#T0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK60S5DPK-M0#T0?
For technical support, including RJK60S5DPK-M0#T0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK60S5DPK-M0#T0 requirements.
6.How does Aetrix verify that RJK60S5DPK-M0#T0 is sourced from the original manufacturer or authorized distributors?
All RJK60S5DPK-M0#T0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK60S5DPK-M0#T0 meets industry standards.
7.What is the process for return or replacement of RJK60S5DPK-M0#T0?
All RJK60S5DPK-M0#T0 units undergo pre-shipment inspection (PSI). If there is an issue with RJK60S5DPK-M0#T0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK60S5DPK-M0#T0 part is unused and in its original packaging.
Return procedure for RJK60S5DPK-M0#T0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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