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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas RJK60S5DPN-00#T2

Name: RJK60S5DPN-00#T2
Brand: Renesas
SKU: RJK60S5DPN-00#T2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: RJK60S5DPN-00#T2

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: RJK60S5DPN-00#T2.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

RJK60S5DPN-00#T2 from Renesas Electronics is a 600 V, 20 A superjunction N-channel power MOSFET in TO-220AB package, optimized for high-speed switching in offline SMPS, PFC stages, and industrial AC-DC converters. It delivers R_DS(on) = 0.150 Ω (typ.) at V_GS = 10 V, t_f = 23 ns (typ.), and dv/dt ruggedness of 150 V/ns - enabling efficient, robust operation in hard-switched 400–600 V bus applications.

For engineers reviewing the RJK60S5DPN-00#T2 datasheet, RJK60S5DPN-00#T2 pinout, RJK60S5DPN-00#T2 application, or RJK60S5DPN-00#T2 equivalent, key selection criteria include its 600 V V_DSS, 0.150 Ω R_DS(on), 27 nC total gate charge, body-diode t_rr = 400 ns, and TO-220AB thermal performance (θ_ch-c = 0.75 °C/W).

Technical Context

This superjunction MOSFET employs charge compensation technology to achieve low conduction loss without sacrificing switching speed. Its 1600 pF C_iss, 2160 pF C_oss, and 8.2 pF Cr_ss support fast, controllable turn-on/turn-off with minimal Miller-induced oscillation under 480 V DC bus conditions.

The device integrates an optimized body diode with V_DF = 0.96 V (typ.) at I_F = 20 A and t_rr = 400 ns (typ.), enabling reliable operation in continuous conduction mode (CCM) PFC and flyback topologies where reverse recovery behavior directly impacts EMI and efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports full-range universal input (85–265 VAC) rectified to 400–600 V DC bus with margin for surge and ringing
R_DS(on)	0.150 Ω (typ.) at I_D = 10 A, V_GS = 10 V - enables <1.5 W conduction loss at 20 A RMS in 100 kHz PFC stage
t_f / t_r	23 ns / 25 ns (typ.) - reduces switching transition time, lowering overlap loss in hard-switched topologies
Q_g	27 nC - determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers
C_oss	2160 pF (typ.) - influences turn-off energy and resonant behavior during ZVS/ZCS transitions
t_rr	400 ns (typ.) - defines body-diode recovery window; critical for minimizing shoot-through risk in half-bridge configurations
P_ch	166.6 W at T_c = 25°C - sets maximum continuous power handling with heatsink; derates linearly to 12.6 A at T_c = 100°C

Pinout & Package

Package: TO-220AB (RENESAS code PRSS0004AC-A), through-hole, single-ended drain tab, isolated mounting flange, 1.8 g mass. Thermal resistance θ_ch-c = 0.75 °C/W enables high-power dissipation with minimal heatsink footprint.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives 10 V logic-level drive; R_g = 2.5 Ω (typ.) affects switching speed and gate ringing susceptibility
2 (Drain)	High-side power output	Connected to DC bus (up to 600 V); electrically tied to metal tab - requires isolation when mounted to heatsink
3 (Source)	Power return / reference node	Serves as common return for gate drive and load current; defines local ground for driver IC placement

Key Features

Feature	Design Value
Superjunction architecture	Enables 600 V rating with R_DS(on) 40% lower than planar MOSFETs of same die size - improves power density in space-constrained PSUs
dv/dt ruggedness	150 V/ns - suppresses false turn-on during high dV/dt transients in bridge-leg configurations without external snubbers
Body-diode Q_rr	5.6 μC (typ.) - quantifies stored charge affecting recovery losses; lower than legacy 600 V MOSFETs by ~25%
Channel temperature limit	T_ch = 150°C - allows sustained operation at elevated ambient temperatures in enclosed industrial enclosures
Avalanche energy rating	E_AR = 1.36 mJ - supports single-pulse unclamped inductive switching events up to 5 A without failure

Applications

Industrial AC-DC Power Supplies	Server & Telecom Rectification
Use Scenario: Primary-side switch in 1–3 kW telecom rectifiers operating at 100–300 kHz with active clamp or LLC topology. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from 400 V DC bus to transformer primary; handles repetitive 20 A peak drain current. Use Value: Low R_DS(on) and fast t_f reduce conduction + switching losses, improving full-load efficiency beyond 94% while maintaining thermal margin at 60°C ambient.	Use Scenario: Boost PFC stage in redundant 2 kW server power supplies with universal AC input. IC Role / Device Role / Timing Role: Fast-switching boost switch operating in CCM at 65–120 kHz; commutates 20 A peak inductor current. Use Value: 400 ns t_rr and low Q_rr minimize body-diode conduction loss and EMI generation during zero-crossing transitions.
Motor Drive Inverter Stages	EV Charger Front-End Converters
Use Scenario: Upper-leg switch in 3-phase IGBT/MOSFET inverter driving 5–10 HP industrial motors. IC Role / Device Role / Timing Role: High-side switching element in 600 V DC link inverter; subjected to 150 V/ns voltage transients during adjacent leg commutation. Use Value: 150 V/ns dv/dt ruggedness prevents spurious turn-on without gate resistors >10 Ω, simplifying gate drive design and layout.	Use Scenario: Active front-end (AFE) rectifier in 7–22 kW AC-to-DC EV charging stations. IC Role / Device Role / Timing Role: Bidirectional switching device in three-level NPC or T-type converter handling 20 A RMS line current at 15–25 kHz. Use Value: 166.6 W channel dissipation at T_c = 25°C supports high-power density design with forced-air cooling and compact heatsinks.

Industrial AC-DC Power Supplies

Server & Telecom Rectification

Use Scenario: Primary-side switch in 1–3 kW telecom rectifiers operating at 100–300 kHz with active clamp or LLC topology.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from 400 V DC bus to transformer primary; handles repetitive 20 A peak drain current.

Use Value: Low R_DS(on) and fast t_f reduce conduction + switching losses, improving full-load efficiency beyond 94% while maintaining thermal margin at 60°C ambient.

Use Scenario: Boost PFC stage in redundant 2 kW server power supplies with universal AC input.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating in CCM at 65–120 kHz; commutates 20 A peak inductor current.

Use Value: 400 ns t_rr and low Q_rr minimize body-diode conduction loss and EMI generation during zero-crossing transitions.

Motor Drive Inverter Stages

EV Charger Front-End Converters

Use Scenario: Upper-leg switch in 3-phase IGBT/MOSFET inverter driving 5–10 HP industrial motors.

IC Role / Device Role / Timing Role: High-side switching element in 600 V DC link inverter; subjected to 150 V/ns voltage transients during adjacent leg commutation.

Use Value: 150 V/ns dv/dt ruggedness prevents spurious turn-on without gate resistors >10 Ω, simplifying gate drive design and layout.

Use Scenario: Active front-end (AFE) rectifier in 7–22 kW AC-to-DC EV charging stations.

IC Role / Device Role / Timing Role: Bidirectional switching device in three-level NPC or T-type converter handling 20 A RMS line current at 15–25 kHz.

Use Value: 166.6 W channel dissipation at T_c = 25°C supports high-power density design with forced-air cooling and compact heatsinks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW60N60DM6	600 V, 60 A, R_DS(on) = 0.055 Ω, Q_g = 65 nC, TO-247 package	Higher current rating and lower R_DS(on), but larger footprint and higher gate drive demand	Preferred for >30 A continuous designs requiring lower conduction loss; not drop-in due to TO-247 vs. TO-220AB
IXTH30N60L2	600 V, 30 A, R_DS(on) = 0.125 Ω, t_f = 35 ns, TO-247 package	Lower R_DS(on) but slower switching and higher C_oss (2800 pF)	Better for lower-frequency (<60 kHz), high-current applications where switching loss is secondary to conduction loss

Compared with STW60N60DM6 and IXTH30N60L2, the RJK60S5DPN-00#T2 offers optimal balance of 20 A current capability, 0.150 Ω R_DS(on), 23 ns t_f, and TO-220AB thermal/mechanical fit - making it ideal for cost-sensitive, medium-power industrial PSUs where board space and gate drive simplicity are prioritized.

Availability

RJK60S5DPN-00#T2 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom rectifiers, motor drive inverters, and EV charger front-end converters requiring stable component supply and long-term manufacturing continuity.

Supply support for RJK60S5DPN-00#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications - with emphasis on reliability, integration, and real-time performance.

The RJK60S5DPN-00#T2 belongs to Renesas' high-voltage superjunction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and infrastructure equipment.

FAQ

What is the maximum continuous drain current rating for RJK60S5DPN-00#T2 at case temperature of 100°C?

The RJK60S5DPN-00#T2 supports a continuous drain current of 12.6 A at T_c = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures safe operation within the 150°C channel temperature limit. The RJK60S5DPN-00#T2 must be mounted on an appropriately sized heatsink to maintain T_c ≤ 100°C under full load.

Does RJK60S5DPN-00#T2 have avalanche capability, and what is its rated energy?

Yes, the RJK60S5DPN-00#T2 is rated for repetitive avalanche operation with E_AR = 1.36 mJ at T_ch ≤ 150°C and V_DD = 50 V. This specification confirms its ability to withstand single-pulse inductive switching events up to 5 A without failure - a key reliability feature for hard-switched converters subject to load dump or short-circuit transients. The RJK60S5DPN-00#T2 datasheet specifies test conditions including R_g ≥ 100 Ω.

What is the typical gate-to-source threshold voltage (V_GS(off)) for RJK60S5DPN-00#T2, and how does it vary with temperature?

The RJK60S5DPN-00#T2 has a typical gate-to-source cutoff voltage V_GS(off) of 4 V (min 3 V, max 5 V) at T_a = 25°C and I_D = 1 mA. As shown in Figure 5 of the datasheet, V_GS(off) decreases linearly with rising case temperature - approximately 3.7 V at 100°C and 3.4 V at 125°C - which must be considered when designing gate drive margins for high-temperature operation. This behavior is inherent to the RJK60S5DPN-00#T2's silicon process.

Can RJK60S5DPN-00#T2 be used in synchronous rectification applications?

No, the RJK60S5DPN-00#T2 is not designed for synchronous rectification. It is a standard superjunction N-channel MOSFET with a body diode optimized for PFC and switching roles - not for low-V_F forward conduction or ultra-fast reverse recovery required in SR stages. Its body diode V_DF = 0.96 V (typ.) and t_rr = 400 ns are unsuitable for high-frequency SR; dedicated SR controllers paired with logic-level MOSFETs remain the appropriate solution. The RJK60S5DPN-00#T2 serves only as a primary-side switch.

What is the thermal resistance from channel to case (θ_ch-c) for RJK60S5DPN-00#T2, and how is it measured?

The RJK60S5DPN-00#T2 has a channel-to-case thermal resistance θ_ch-c of 0.75 °C/W, measured under steady-state conditions with the device mounted to a large copper heatsink at T_c = 25°C per JEDEC JESD51-2. This value enables accurate junction temperature estimation using T_ch = T_c + (P_diss × θ_ch-c). The RJK60S5DPN-00#T2's TO-220AB package uses direct metal tab contact for optimal heat transfer - mounting pressure and thermal interface material significantly affect real-world performance.

RJK60S5DPN-00#T2 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

RJK60S5DPN-00#T2 FAQ

1.How can I place an order for RJK60S5DPN-00#T2 through Aetrix?

Please submit a Request for Quotation (RFQ) for RJK60S5DPN-00#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RJK60S5DPN-00#T2 reliable?

The price and inventory of RJK60S5DPN-00#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK60S5DPN-00#T2 is usually 5 days.

3.What payment methods are accepted for RJK60S5DPN-00#T2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK60S5DPN-00#T2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RJK60S5DPN-00#T2?

RJK60S5DPN-00#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RJK60S5DPN-00#T2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RJK60S5DPN-00#T2?

For technical support, including RJK60S5DPN-00#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK60S5DPN-00#T2 requirements.

6.How does Aetrix verify that RJK60S5DPN-00#T2 is sourced from the original manufacturer or authorized distributors?

All RJK60S5DPN-00#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK60S5DPN-00#T2 meets industry standards.

7.What is the process for return or replacement of RJK60S5DPN-00#T2?

All RJK60S5DPN-00#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK60S5DPN-00#T2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RJK60S5DPN-00#T2 part is unused and in its original packaging.

Return procedure for RJK60S5DPN-00#T2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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