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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas RJK60S5DPE-00#J3

Name: RJK60S5DPE-00#J3
Brand: Renesas
SKU: RJK60S5DPE-00#J3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: RJK60S5DPE-00#J3

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: SC-83

Datasheet:: RJK60S5DPE-00#J3.pdf

Description:: MOSFET N-CH 600V 20A 4LDPAK

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Product details

Overview

RJK60S5DPE-00#J3 from Renesas Electronics is a 600 V, 20 A superjunction MOSFET in LDPAK(S)-(1) package, featuring R_DS(on) = 0.150 Ω (typ.), t_f = 23 ns (typ.), and 150 V/ns dv/dt ruggedness. It serves as a high-speed power switch in offline SMPS, PFC stages, and industrial AC-DC converters requiring robust avalanche capability and low conduction loss.

For engineers reviewing the RJK60S5DPE-00#J3 datasheet, RJK60S5DPE-00#J3 pinout, RJK60S5DPE-00#J3 application, or RJK60S5DPE-00#J3 equivalent, key selection criteria include its 125 W channel dissipation at T_c = 25°C, body-diode reverse recovery charge Q_rr = 5.6 μC, and gate charge Q_g = 27 nC - critical for optimizing switching efficiency and thermal management in high-frequency hard-switched topologies.

Technical Context

This device implements a planar superjunction structure optimized for high-voltage, medium-current switching with enhanced E_AS rating (1.36 mJ) and stable V_(BR)DSS up to 150°C. Its low C_iss/C_oss ratio (1600 pF / 2160 pF) and minimal Crss (8.2 pF) support fast, low-noise turn-on and reduced Miller-induced shoot-through risk.

The integrated body diode exhibits V_DF = 0.96 V (typ.) at I_F = 20 A and t_rr = 400 ns (typ.), enabling reliable freewheeling in bridge-leg configurations without external diode supplementation. Thermal design is anchored by θ_ch-c = 1.0°C/W and T_ch max = 150°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports 400 VAC input rectified systems with 20% margin for line surges and ringing.
R_DS(on)	0.150 Ω (typ.) at V_GS = 10 V - enables ≤3 W conduction loss at 20 A DC, reducing heatsink requirements.
Q_g	27 nC - determines gate drive power and switching speed; compatible with standard 1–2 A peak gate drivers.
t_f	23 ns (typ.) - minimizes switching transition time, lowering dynamic losses in 65–100 kHz PFC and LLC designs.
E_AR	1.36 mJ - specifies single-pulse avalanche energy handling, supporting non-clamped inductive turn-off stress.
dv/dt	150 V/ns - ensures immunity to false turn-on during high-slew-rate voltage transients in high-noise environments.
θ_ch-c	1.0°C/W - allows direct thermal coupling to heatsink; enables 125 W continuous dissipation at 25°C case temperature.

Pinout & Package

Package: LDPAK(S)-(1), also designated PRSS0004AE-B per Renesas - surface-mount, thermally enhanced 4-pin package with dual drain terminals for current sharing and low-inductance layout.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≥10 V drive for full enhancement; gate resistance R_g = 2.5 Ω (typ.) affects switching speed tuning.
2 (D)	Drain	Main high-side power terminal; electrically connected to heat slug; used for primary current path into device.
3 (S)	Source	Power return and reference node for gate drive; low-inductance connection critical for stable switching.
4 (D)	Drain	Second drain terminal - paralleled internally with Pin 2 to halve current density and reduce package inductance.

Key Features

Feature	Design Value
Superjunction architecture	Enables 600 V rating with R_DS(on) 40% lower than conventional VDMOS, improving power density in compact adapters.
Low Q_gd/Q_g ratio	Q_gd = 8.5 nC of total Q_g = 27 nC - reduces Miller plateau duration, easing gate driver design and improving EMI behavior.
High dv/dt ruggedness	150 V/ns rating - prevents spurious turn-on during fast voltage transitions in half-bridge and totem-pole PFC circuits.
Robust body diode	Q_rr = 5.6 μC and t_rr = 400 ns - supports soft-recovery operation in synchronous rectification and bidirectional switches.
Thermal performance	θ_ch-c = 1.0°C/W and P_ch = 125 W at T_c = 25°C - enables high-power density without forced air cooling in industrial power supplies.

Applications

Industrial AC-DC Power Supplies	Server & Telecom Rectifiers
Use Scenario: Primary-side switching in 1–3 kW telecom rectifiers operating at 100 kHz with universal AC input. IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost PFC stage. Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses, achieving >96% efficiency at full load while maintaining thermal margin.	Use Scenario: Main power switch in redundant 48 V output server PSUs with active OR-ing and hot-swap capability. IC Role / Device Role / Timing Role: Synchronous rectifier control switch in isolated LLC resonant converter secondary side. Use Value: Dual-drain configuration lowers package inductance, minimizing voltage overshoot during fast turn-off and improving reliability under transient loads.
Motor Drive Inverters	Renewable Energy Converters
Use Scenario: Half-bridge leg in 750 W–2 kW variable-frequency drives for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Low-side switching element in 3-phase inverter bridge with bootstrap gate drive. Use Value: Body-diode t_rr = 400 ns and Q_rr = 5.6 μC ensure clean commutation during PWM dead-time, suppressing shoot-through risk.	Use Scenario: DC-link switch in string-level solar microinverters handling 600 V DC input and 230 V AC output. IC Role / Device Role / Timing Role: High-voltage DC switch in H-bridge inverter topology with unidirectional energy flow. Use Value: 1.36 mJ avalanche energy rating tolerates inductive kickback from transformer leakage in high-efficiency isolated topologies.

Industrial AC-DC Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switching in 1–3 kW telecom rectifiers operating at 100 kHz with universal AC input.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost PFC stage.

Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses, achieving >96% efficiency at full load while maintaining thermal margin.

Use Scenario: Main power switch in redundant 48 V output server PSUs with active OR-ing and hot-swap capability.

IC Role / Device Role / Timing Role: Synchronous rectifier control switch in isolated LLC resonant converter secondary side.

Use Value: Dual-drain configuration lowers package inductance, minimizing voltage overshoot during fast turn-off and improving reliability under transient loads.

Motor Drive Inverters

Renewable Energy Converters

Use Scenario: Half-bridge leg in 750 W–2 kW variable-frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Low-side switching element in 3-phase inverter bridge with bootstrap gate drive.

Use Value: Body-diode t_rr = 400 ns and Q_rr = 5.6 μC ensure clean commutation during PWM dead-time, suppressing shoot-through risk.

Use Scenario: DC-link switch in string-level solar microinverters handling 600 V DC input and 230 V AC output.

IC Role / Device Role / Timing Role: High-voltage DC switch in H-bridge inverter topology with unidirectional energy flow.

Use Value: 1.36 mJ avalanche energy rating tolerates inductive kickback from transformer leakage in high-efficiency isolated topologies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW60N60DM6	R_DS(on) = 0.135 Ω (typ.), Q_g = 32 nC, t_f = 25 ns, TO-247 package.	Higher gate charge increases driver loss; larger TO-247 footprint limits board space vs. LDPAK.	Preferred where higher avalanche rating (E_AS = 2.1 mJ) and proven field reliability in motor drives outweigh thermal density needs.
IXTH60N60L2	R_DS(on) = 0.145 Ω (typ.), Q_g = 25 nC, t_f = 20 ns, TO-247 package with faster fall time but no dual drain.	Lacks dual-drain terminals - higher package inductance may require snubber optimization in high-dI/dt layouts.	Better suited for ultra-fast switching in resonant converters where minimal t_f dominates over thermal spreading.

Compared with STW60N60DM6 and IXTH60N60L2, RJK60S5DPE-00#J3 delivers superior thermal density via LDPAK's 1.0°C/W θ_ch-c, lower gate drive power due to 27 nC Q_g, and inherent layout advantage from dual drain terminals - making it optimal for space-constrained, high-power-density industrial and telecom power designs.

Availability

RJK60S5DPE-00#J3 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server rectifiers, and renewable energy inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for RJK60S5DPE-00#J3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

RJK60S5DPE-00#J3 belongs to Renesas' high-voltage superjunction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and telecom equipment.

FAQ

What is the maximum continuous drain current rating for RJK60S5DPE-00#J3 at 100°C case temperature?

The RJK60S5DPE-00#J3 has a maximum continuous drain current I_D of 12.6 A at T_c = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the 1.0°C/W channel-to-case thermal impedance and 150°C maximum channel temperature. At T_c = 25°C, the rating rises to 20 A. Designers must verify PCB copper area and heatsinking to sustain this current under real operating conditions.

Does RJK60S5DPE-00#J3 support gate drive voltages below 10 V?

Yes, RJK60S5DPE-00#J3 is fully characterized down to V_GS = 5 V, with transfer characteristics shown across 5–15 V in the datasheet. However, R_DS(on) increases significantly below 10 V - e.g., at V_GS = 8 V, R_DS(on) rises to ~0.19 Ω (typ.). For optimal conduction loss, 10 V gate drive is recommended; 12–15 V provides margin against threshold shift at high temperature.

How does the dual-drain configuration of RJK60S5DPE-00#J3 improve system performance?

The dual-drain configuration (Pins 2 and 4) in RJK60S5DPE-00#J3 halves effective package inductance compared to single-drain equivalents, reducing voltage overshoot during turn-off and improving EMI. It also distributes current and thermal load across two parallel paths, enhancing reliability in high-current applications like PFC and motor drives. Layouts benefit from symmetric source–drain routing and lower loop inductance in high-frequency switching nodes.

What is the typical body-diode forward voltage of RJK60S5DPE-00#J3, and how does it affect freewheeling operation?

The typical body-diode forward voltage V_DF of RJK60S5DPE-00#J3 is 0.96 V at I_F = 20 A and V_GS = 0 V. This low V_DF minimizes conduction loss during freewheeling intervals in bridge configurations. Combined with t_rr = 400 ns and Q_rr = 5.6 μC, it enables predictable, low-loss commutation - critical for stable operation in totem-pole PFC and synchronous rectifier topologies where body-diode conduction is unavoidable.

Is RJK60S5DPE-00#J3 suitable for avalanche-rated applications, and what is its single-pulse energy limit?

Yes, RJK60S5DPE-00#J3 is rated for repetitive avalanche operation with a single-pulse avalanche energy E_AR of 1.36 mJ at T_ch ≤ 150°C. This rating applies under defined test conditions (V_DD = 50 V, R_g ≥ 100 Ω). It supports limited inductive turn-off stress in non-clamped topologies, but sustained avalanche operation is not recommended. Designers should verify layout parasitics and clamping networks to avoid exceeding this limit in practical use.

RJK60S5DPE-00#J3 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: SC-83

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 178mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LDPAK

RJK60S5DPE-00#J3 FAQ

1.How can I place an order for RJK60S5DPE-00#J3 through Aetrix?

Please submit a Request for Quotation (RFQ) for RJK60S5DPE-00#J3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RJK60S5DPE-00#J3 reliable?

The price and inventory of RJK60S5DPE-00#J3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK60S5DPE-00#J3 is usually 5 days.

3.What payment methods are accepted for RJK60S5DPE-00#J3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK60S5DPE-00#J3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RJK60S5DPE-00#J3?

RJK60S5DPE-00#J3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RJK60S5DPE-00#J3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RJK60S5DPE-00#J3?

For technical support, including RJK60S5DPE-00#J3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK60S5DPE-00#J3 requirements.

6.How does Aetrix verify that RJK60S5DPE-00#J3 is sourced from the original manufacturer or authorized distributors?

All RJK60S5DPE-00#J3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK60S5DPE-00#J3 meets industry standards.

7.What is the process for return or replacement of RJK60S5DPE-00#J3?

All RJK60S5DPE-00#J3 units undergo pre-shipment inspection (PSI). If there is an issue with RJK60S5DPE-00#J3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RJK60S5DPE-00#J3 part is unused and in its original packaging.

Return procedure for RJK60S5DPE-00#J3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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