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STMicroelectronics STL42N65M5

Name: STL42N65M5
Brand: STMicroelectronics
SKU: STL42N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STL42N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: STL42N65M5.pdf

Description:: MOSFET N-CH 650V 4A PWRFLAT HV

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STL42N65M5 from STMicroelectronics is an N-channel 650 V, 34 A MDmesh™ V Power MOSFET in PowerFLAT™ 8x8 HV package, featuring 0.070 Ω R_DS(on) (typ), 100% avalanche tested, and low gate charge (100 nC). It delivers high power density for hard-switched SMPS, PFC stages, and industrial motor drives operating up to 150 °C junction temperature.

For engineers reviewing the STL42N65M5 datasheet, STL42N65M5 pinout, STL42N65M5 application, or STL42N65M5 equivalent, key selection criteria include its 650 V V_DSS, 0.070 Ω R_DS(on) at 10 V_GS, 100 nC total gate charge, 4650 pF input capacitance, and PowerFLAT™ 8x8 HV thermal performance (R_thj-case = 0.6 °C/W).

Technical Context

This device employs ST's proprietary MDmesh™ V vertical silicon process combined with PowerMESH™ horizontal layout, enabling ultra-low on-resistance among 650 V silicon MOSFETs. Its 710 V V_DSS rating (at T_jmax) supports robust overvoltage margin in fast-switching topologies.

The MOSFET integrates a fast-recovery body diode with t_rr = 400 ns (T_j = 25 °C) and Q_rr = 7 µC, optimized for ZVS and resonant converters. Gate drive compatibility is ensured by ±25 V V_GS rating and 1.4 Ω intrinsic gate resistance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Maximum continuous drain-source blocking voltage; supports 400 V DC bus designs with 75 V overhead margin.
R_DS(on) max	0.079 Ω - Measured at V_GS = 10 V, I_D = 16.5 A; enables <1.5 W conduction loss at 34 A continuous current.
I_D (T_C = 25 °C)	34 A - Continuous drain current limited by case temperature; requires heatsinking for sustained operation.
Q_g	100 nC - Total gate charge at V_DD = 520 V, I_D = 16.5 A; determines gate driver power and switching speed trade-off.
C_iss	4650 pF - Input capacitance at V_DS = 100 V; impacts gate drive loop stability and EMI filter sizing.
R_thj-case	0.6 °C/W - Junction-to-case thermal resistance; enables 208 W power dissipation with minimal thermal interface resistance.
E_AS	950 mJ - Single-pulse avalanche energy at T_j = 25 °C; supports unclamped inductive switching without failure.

Pinout & Package

STL42N65M5 uses the PowerFLAT™ 8x8 HV package - a bottom-side cooled, surface-mount, 3-pin thermally enhanced leadless package with exposed drain pad. The package complies with ECOPACK® environmental standards and supports automated optical inspection (AOI) via index area marking.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-impedance return path for load current; electrically tied to PCB ground plane for EMI control.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <1.4 Ω series resistance to damp ringing during fast edge transitions.
Pin 3 (Drain)	Power output / high-side switch node	Exposed copper pad on bottom side; must be soldered to large copper pour for thermal and current conduction.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees ruggedness under unclamped inductive switching; eliminates need for external snubbers in flyback or LLC primary switches.
Low C_iss and Q_g	Reduces gate drive power loss and enables >200 kHz operation with standard 1 A peak gate drivers.
MDmesh™ V + PowerMESH™ integration	Delivers best-in-class R_DS(on) × A figure-of-merit for 650 V devices, improving power density by ≥25% vs. prior-generation silicon.
Fast body diode (t_rr = 400 ns)	Minimizes reverse recovery losses in bridge configurations and enables soft-switching in phase-shifted full-bridge topologies.

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-efficiency 3.3 kW server power supply operating at 100–240 VAC input with active clamp forward or LLC topology.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 34 A peak current at 650 V blocking, synchronized to 200–500 kHz PWM controller.

Use Value: 0.070 Ω R_DS(on) reduces conduction loss by 1.2 W vs. comparable 0.09 Ω devices, directly improving 80 PLUS Titanium efficiency compliance.

Use Scenario: Three-phase active front-end rectifier in industrial variable-frequency drives with 400 VAC line input.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC stage, switching at 65–100 kHz with 34 A RMS current capability.

Use Value: Low Q_g (100 nC) and C_iss (4650 pF) reduce gate drive losses and enable stable zero-voltage switching across full load range.

Solar Microinverter H-Bridge

EV Onboard Charger DC/DC Stage

Use Scenario: Full-bridge inverter stage in single-phase 300–600 W solar microinverters interfacing with 40–60 V PV strings.

IC Role / Device Role / Timing Role: High-side and low-side switch in H-bridge configuration, operating in phase-shifted modulation with bidirectional current flow.

Use Value: Fast body diode (t_rr = 400 ns) and low Q_rr (7 µC) suppress shoot-through risk and reduce dead-time losses by 18% compared to standard superjunction MOSFETs.

Use Scenario: Isolated DC/DC converter in 6.6 kW EV onboard charger converting 400 V battery to 12 V auxiliary supply.

IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge (DAB) topology, rated for 34 A pulsed current and 650 V isolation barrier.

Use Value: R_thj-case = 0.6 °C/W allows direct mounting to cold plate, reducing thermal interface layers and enabling 150 °C continuous operation without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R080CFD7	Higher R_DS(on) (0.080 Ω), lower Q_g (72 nC), TO-247 package	Requires mechanical heatsink; less suitable for space-constrained board-level cooling	Preferred where gate drive power is critical and thermal mass is available
IXTH30N65X2	Lower I_D (30 A), higher R_DS(on) (0.115 Ω), TO-247 package	Limited to ≤25 A continuous operation; no avalanche rating specified	Selected only when cost sensitivity outweighs efficiency and ruggedness requirements

Compared with IPW65R080CFD7 and IXTH30N65X2, STL42N65M5 offers superior power density due to its PowerFLAT™ 8x8 HV package and lowest R_DS(on) in class, but demands precise PCB layout for thermal and EMI control-making it optimal for compact, high-efficiency industrial and renewable energy systems.

Availability

STL42N65M5 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, solar microinverters, and EV onboard charger DC/DC stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STL42N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This MOSFET belongs to ST's MDmesh™ V high-voltage power transistor product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies and industrial motor control systems demanding low conduction and switching losses.

FAQ

What is the maximum safe operating junction temperature for STL42N65M5?

The absolute maximum operating junction temperature is 150 °C, validated per JEDEC JESD22-A108. Operation above this limit risks permanent degradation of the MDmesh™ V structure and gate oxide integrity. Thermal design must ensure T_j remains ≤150 °C under worst-case ambient and load conditions, using R_thj-case = 0.6 °C/W and verified PCB copper area.

Does STL42N65M5 require a negative gate turn-off voltage?

No. The device operates with 0 V to +10 V gate drive for nominal switching and +15 V for enhanced R_DS(on) margin. A negative turn-off voltage is not required or recommended; the ±25 V V_GS rating defines absolute limits, not operational requirements. Standard 0 V to +12 V gate drivers are fully compatible.

Can STL42N65M5 replace older STL42N65M2 in existing designs?

Yes, with validation. STL42N65M5 improves R_DS(on) (0.070 Ω vs. 0.085 Ω), reduces Q_g (100 nC vs. 115 nC), and retains identical PowerFLAT™ 8x8 HV footprint and pinout. Layout changes are unnecessary, but gate drive timing and thermal margin should be rechecked due to higher peak current capability (136 A pulsed).

Is the body diode suitable for synchronous rectification?

No. The integrated body diode is optimized for freewheeling and clamping-not synchronous rectification. Its V_SD = 1.5 V at 33 A and Q_rr = 7 µC result in higher conduction and recovery losses than discrete Schottky or GaN-based synchronous rectifiers. Use external low-V_F diodes or dedicated SR controllers for rectification roles.

STL42N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Ta), 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 79mOhm @ 16.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 4650 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 208W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerFlat™ (8x8) HV

STL42N65M5 FAQ

1.How can I place an order for STL42N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STL42N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STL42N65M5 reliable?

The price and inventory of STL42N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STL42N65M5 is usually 5 days.

3.What payment methods are accepted for STL42N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STL42N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STL42N65M5?

STL42N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STL42N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STL42N65M5?

For technical support, including STL42N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STL42N65M5 requirements.

6.How does Aetrix verify that STL42N65M5 is sourced from the original manufacturer or authorized distributors?

All STL42N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STL42N65M5 meets industry standards.

7.What is the process for return or replacement of STL42N65M5?

All STL42N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STL42N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STL42N65M5 part is unused and in its original packaging.

Return procedure for STL42N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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