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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW70N60DM6-4

Name: STW70N60DM6-4
Brand: STMicroelectronics
SKU: STW70N60DM6-4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW70N60DM6-4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: STW70N60DM6-4.pdf

Description:: MOSFET N-CH 600V 62A TO247-4

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Product details

Overview

STW70N60DM6-4 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM6 series, featuring 600 V V_DS, 36 mΩ typ. R_DS(on) at V_GS = 10 V and 31 A, 62 A continuous drain current at T_C = 25 °C, and integrated fast-recovery body diode with Q_rr = 0.69 µC (T_J = 25 °C). It is engineered for ZVS phase-shift converters and high-efficiency bridge topologies.

For engineers reviewing the STW70N60DM6-4 datasheet, STW70N60DM6-4 pinout, STW70N60DM6-4 application, or STW70N60DM6-4 equivalent, key selection criteria include dv/dt ruggedness (100 V/ns), gate charge (99 nC), reverse recovery performance (trr = 138 ns), and TO247-4 package with dedicated driver source pin for reduced source inductance.

Technical Context

This MOSFET employs ST's MDmesh DM6 silicon technology, delivering ultra-low Q_rr and trr while maintaining low R_DS(on) per die area-enabling high-frequency switching in resonant and soft-switching topologies. Its Zener-protected gate and 100% avalanche-tested construction ensure robustness under transient stress.

The TO247-4 package integrates a separate driver source terminal (Pin 3), decoupling gate drive loop from power source path to minimize parasitic inductance and improve switching stability. The device exhibits extremely high dv/dt ruggedness (100 V/ns) and di/dt capability (1000 A/µs) during body diode commutation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in 400 V DC bus industrial and telecom PSUs
R_DS(on) max	42 mΩ - enables low conduction loss at 62 A continuous, reducing thermal load in high-power stages
Q_g	99 nC - determines gate driver power requirement and influences switching speed control
Q_rr	0.69 µC (T_J = 25 °C) - minimizes turn-on loss and EMI in hard- and soft-switched bridges
trr	138 ns - ensures clean commutation in phase-shifted full-bridge converters operating up to 200 kHz
dv/dt ruggedness	100 V/ns - prevents spurious turn-on during high-slew-rate voltage transients in high-side configurations
T_J max	150 °C - defines maximum junction temperature for SOA-limited operation and thermal design margin

Pinout & Package

Delivered in TO247-4 package with isolated tab (Drain), enabling direct heatsink mounting and enhanced thermal dissipation (R_thJC = 0.32 °C/W). The 4-pin configuration separates driver return path from power source to suppress gate oscillation.

Pin/Terminal	Circuit Role	Design Meaning
1, TAB	Drain	High-voltage power output node; electrically connected to metal tab for low-inductance heatsink interface
2	Power Source (S)	Main source terminal carrying full load current; referenced to system ground or low-side switch node
3	Driver Source (S_DRV)	Dedicated gate return path; isolates gate loop from power current to reduce ringing and improve dV/dt immunity
4	Gate	Control input requiring 10 V threshold (V_GS(th) = 3.25–4.75 V); driven by isolated gate driver with ≤1.5 Ω intrinsic R_g

Key Features

Feature	Design Value
Fast-recovery body diode	Q_rr = 0.69 µC and trr = 138 ns enable efficient synchronous rectification and reduce snubber losses
Low gate charge	Q_g = 99 nC allows use of cost-effective gate drivers while supporting >200 kHz switching in ZVS designs
Driver source pin	Separate S_DRV terminal reduces gate loop inductance by >50%, suppressing oscillation during high-di/dt transitions
100% avalanche tested	Rated for 1850 mJ single-pulse avalanche energy (E_AS), ensuring reliability under unclamped inductive fault conditions
Zener-protected gate	±25 V V_GS rating with integrated gate oxide protection prevents damage from ESD or overvoltage during handling and layout

Applications

Industrial SMPS

Telecom Rectifiers

Use Scenario: 3 kW three-phase PFC front-end with interleaved boost stages operating at 100 kHz.

IC Role / Device Role / Timing Role: High-side switching element in active clamp forward or phase-shifted full-bridge topology.

Use Value: Low Q_rr and fast trr reduce turn-on loss by 35% vs prior-generation MDmesh devices, improving efficiency at light load.

Use Scenario: 48 V/50 A telecom rectifier module with zero-voltage switching control.

IC Role / Device Role / Timing Role: Primary-side MOSFET in asymmetrical half-bridge with adaptive dead-time control.

Use Value: Driver source pin eliminates need for Kelvin-source PCB routing, simplifying layout and cutting EMI filter size by 20%.

EV Onboard Charger

Renewable Energy Inverters

Use Scenario: Bidirectional AC/DC stage in 11 kW OBC using dual-active-bridge architecture.

IC Role / Device Role / Timing Role: Secondary-side high-voltage switch managing 800 V battery interface during reverse power flow.

Use Value: 100 V/ns dv/dt ruggedness prevents false triggering during rapid bus voltage reversal in regenerative mode.

Use Scenario: String-level DC/AC conversion in 15 kW solar microinverter with transformerless topology.

IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage handling 1000 V DC input.

Use Value: 600 V V_DS rating with 150 °C T_J max supports derated operation in desert ambient conditions without forced cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW78N65M5	650 V V_DS, 38 mΩ R_DS(on), no driver source pin, higher Q_rr (1.1 µC)	Lacks dedicated S_DRV; less suitable for >150 kHz ZVS where gate loop inductance dominates loss	Prefer when cost sensitivity outweighs switching frequency requirements and layout space permits Kelvin routing
IPP60R041P7XKSA1	600 V V_DS, 41 mΩ R_DS(on), TO247-3, Q_rr = 1.05 µC, no Zener gate protection	No driver source pin or avalanche testing; lower dv/dt ruggedness (50 V/ns)	Select only for non-critical industrial supplies where BOM cost is primary constraint and fault tolerance is secondary

Compared with STW70N60DM6-4, STW78N65M5 trades dv/dt immunity and gate drive fidelity for higher voltage headroom, while IPP60R041P7XKSA1 sacrifices ruggedness and diode performance for lower unit cost-neither replicates the DM6's integrated driver source or 100 V/ns dv/dt rating.

Availability

STW70N60DM6-4 is available at Aetrix Electronics and suitable for industrial SMPS, telecom rectifiers, and renewable energy inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for high-reliability deployments.

Supply support for STW70N60DM6-4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to the MDmesh DM6 product line-engineered specifically for high-efficiency, high-frequency resonant and soft-switching power converters demanding low Q_rr, fast trr, and robust dv/dt immunity.

FAQ

What is the purpose of the driver source (Pin 3) in the TO247-4 package?

The driver source (Pin 3) provides a dedicated low-inductance return path for the gate driver circuit, physically separating it from the main power source (Pin 2). This eliminates shared source inductance between gate and power loops, reducing gate voltage ringing and improving switching stability-especially critical in high-di/dt ZVS applications above 100 kHz.

How does the STW70N60DM6-4 compare to standard MDmesh D5 MOSFETs in terms of diode recovery?

Compared to MDmesh D5 devices, the STW70N60DM6-4 achieves ~40% lower Q_rr (0.69 µC vs ~1.15 µC) and ~30% shorter trr (138 ns vs ~195 ns) at identical test conditions (I_SD = 62 A, di/dt = 100 A/µs). This results in significantly reduced turn-on loss and lower EMI generation in bridge-leg commutation.

Is the STW70N60DM6-4 suitable for hard-switched PFC applications?

Yes-it is qualified for continuous conduction mode (CCM) PFC stages due to its 100% avalanche-tested construction (E_AS = 1850 mJ), 150 °C T_J max, and low C_oss (235 pF), which minimizes capacitive turn-off loss. However, its optimized Q_rr/trr performance delivers greatest benefit in soft-switched topologies like phase-shifted full-bridge.

What thermal derating applies when operating at T_C = 100 °C?

At T_C = 100 °C, the continuous drain current rating drops from 62 A (at 25 °C) to 39 A per absolute maximum ratings table. This reflects junction-to-case thermal resistance (R_thJC = 0.32 °C/W) and safe operating area constraints-not degradation of R_DS(on), which remains within 2.5× nominal at 150 °C per Figure 10.

STW70N60DM6-4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 62A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 42mOhm @ 31A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 99 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 4360 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 390W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-4

STW70N60DM6-4 FAQ

1.How can I place an order for STW70N60DM6-4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW70N60DM6-4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW70N60DM6-4 reliable?

The price and inventory of STW70N60DM6-4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW70N60DM6-4 is usually 5 days.

3.What payment methods are accepted for STW70N60DM6-4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW70N60DM6-4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW70N60DM6-4?

STW70N60DM6-4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW70N60DM6-4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW70N60DM6-4?

For technical support, including STW70N60DM6-4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW70N60DM6-4 requirements.

6.How does Aetrix verify that STW70N60DM6-4 is sourced from the original manufacturer or authorized distributors?

All STW70N60DM6-4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW70N60DM6-4 meets industry standards.

7.What is the process for return or replacement of STW70N60DM6-4?

All STW70N60DM6-4 units undergo pre-shipment inspection (PSI). If there is an issue with STW70N60DM6-4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW70N60DM6-4 part is unused and in its original packaging.

Return procedure for STW70N60DM6-4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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