Renesas 2SK1968-E

Overview

2SK1968-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in offline AC/DC converters and DC-DC switching regulators. It features 600 V V_DSS, 12 A continuous drain current, 0.68 Ω typical R_DS(on) at V_GS = 10 V, low gate charge (Q_g ≈ 75 nC), and fast switching times (t_d(off) = 145 ns). Its TO-3P package supports high-power dissipation up to 100 W at T_C = 25°C.

For engineers reviewing the 2SK1968-E datasheet, 2SK1968-E pinout, 2SK1968-E application, or 2SK1968-E equivalent, key selection criteria include its 600 V blocking capability, low conduction loss at 6 A, body diode reverse recovery time of 670 ns, suitability for hard-switched flyback and forward topologies, and thermal performance under forced-air or heatsink-cooled conditions.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for rugged high-voltage operation without secondary breakdown limitations. Its gate threshold voltage (V_GS(off) = 2.0–3.0 V) enables reliable turn-on with standard 10 V gate drivers, while its low input capacitance (C_iss = 1800 pF) and moderate Crss (60 pF) support stable high-frequency switching up to 100 kHz in isolated SMPS designs.

The integrated body diode exhibits V_DF = 1.1 V at 12 A and t_rr = 670 ns under di/dt = 100 A/µs - characteristics critical for synchronous rectification evaluation and snubberless quasi-resonant converter implementation where diode recovery stress must be minimized.

Key Specifications

Pinout & Package

2SK1968-E uses the TO-3P (PRSS0004ZE-A) package: insulated plastic case with metal flange for drain connection, rated for 5.0 g mass and 19.9 mm × 15.6 mm footprint. Mounting requires M3 screws through flange holes; thermal interface material recommended between flange and heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW12NK60Z and IXTH12N60L2, the 2SK1968-E offers superior thermal coupling via its integral metal flange, making it preferable for space-constrained industrial power supplies where heatsink integration is critical - despite slightly slower diode recovery and turn-off timing.

Availability

2SK1968-E is available at Aetrix Electronics and suitable for AC/DC offline converters, DC-DC forward regulators, and industrial PFC circuits requiring stable component supply, long-lifecycle support, and traceable sourcing for production programs.

Supply support for 2SK1968-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal ICs for industrial, automotive, and infrastructure markets.

The 2SK1968-E belongs to Renesas' legacy high-voltage discrete MOSFET product line, engineered specifically for robustness and reliability in mains-connected power conversion systems operating up to 600 V.

FAQ

What is the maximum continuous drain current rating for the 2SK1968-E at 100°C case temperature?

The 2SK1968-E has a maximum continuous drain current (I_D) of 12 A at T_C = 25°C. At T_C = 100°C, derating applies per the Power vs. Temperature Derating curve on page 3 of the datasheet: R_DS(on) increases ~2.5×, limiting practical I_D to approximately 5.5 A for sustained operation without exceeding P_ch = 100 W. Always verify thermal design using the normalized transient thermal impedance chart (page 5) for pulsed loads.

Does the 2SK1968-E have a built-in body diode, and what are its key parameters?

Yes, the 2SK1968-E integrates a body diode between source and drain. Its key parameters are forward voltage V_DF = 1.1 V at I_F = 12 A and reverse recovery time t_rr = 670 ns under di/dt = 100 A/µs. This diode is not optimized for freewheeling in synchronous rectification but supports basic clamp and snubber functions in flyback and forward converters. The 2SK1968-E datasheet specifies these values on page 2 under Electrical Characteristics.

Can the 2SK1968-E be used in avalanche mode, and what is its rated avalanche energy?

No, the 2SK1968-E is not rated for repetitive avalanche operation. The datasheet does not specify single-pulse or repetitive avalanche energy (E_AS). Its Absolute Maximum Ratings list only V_DSS, I_D, and P_ch; operation beyond V_DSS risks irreversible breakdown. For designs requiring avalanche capability, consult Renesas' "RJK" series or alternative avalanche-rated MOSFETs - the 2SK1968-E must remain within its 600 V V_DSS limit at all times.

What is the gate threshold voltage range for the 2SK1968-E, and how does it affect drive circuit design?

The 2SK1968-E has a gate-to-source cutoff voltage V_GS(off) of 2.0–3.0 V (measured at I_D = 1 mA). This means the device begins conducting significantly above 2.0 V and achieves full enhancement near 10 V. Drive circuits must supply ≥10 V to ensure low R_DS(on); 5 V logic-level drives will result in excessive conduction loss. The 2SK1968-E gate leakage (I_GSS ≤ ±10 µA at ±25 V) allows simple resistor-based level shifting without active buffers in most SMPS applications.

Is the 2SK1968-E RoHS compliant, and what is its lead-free status?

Yes, the 2SK1968-E is RoHS compliant and lead-free. Per Renesas' environmental compliance documentation (Rev.2.00, Sep 2005), the device meets EU RoHS Directive requirements for restricted substances. The TO-3P package uses lead-free molding compound and termination plating. No exemptions apply; full compliance is confirmed in Renesas' Material Declaration Report for part number 2SK1968-E, available upon request from Aetrix Electronics or Renesas sales offices.