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Renesas RJK60S5DPP-E0#T2
- Part No.:
- RJK60S5DPP-E0#T2
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
RJK60S5DPP-E0#T2.pdf
- Description:
- MOSFET N-CH 600V 20A TO220FP
- Quantity:
- Payment:
- Shipping:
Inventory:226
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Product details
Overview
RJK60S5DPP-E0#T2 from Renesas Electronics is a 600 V, 20 A superjunction MOSFET in TO-220FP package, optimized for high-speed power switching in offline SMPS and PFC stages. It delivers RDS(on) = 0.150 Ω (typ.), tf = 23 ns (typ.), and 150 V/ns dv/dt ruggedness at Tj = 25°C - enabling efficient, reliable operation in 85–265 VAC input AC-DC converters.
For engineers reviewing the RJK60S5DPP-E0#T2 datasheet, RJK60S5DPP-E0#T2 pinout, RJK60S5DPP-E0#T2 application, or RJK60S5DPP-E0#T2 equivalent, key selection criteria include its 600 V VDSS, low gate charge (Qg = 27 nC), body-diode reverse recovery performance (trr = 400 ns), and thermal resistance (θch-c = 3.7 °C/W) - all critical for hard-switched industrial and consumer power supplies.
Technical Context
This device implements a planar superjunction structure with optimized charge balance, delivering low conduction loss while maintaining robust avalanche capability (EAR = 1.36 mJ). Its gate threshold voltage (VGS(off) = 3–5 V) ensures stable turn-on under typical 10 V gate drive, and its Ciss/Coss/Crss values (1600/2160/8.2 pF) support predictable snubber design and EMI control.
The integrated body diode exhibits VDF = 0.96 V (typ.) at IF = 20 A and controlled reverse recovery (Qrr = 5.6 μC), making it suitable for continuous conduction mode (CCM) PFC where diode commutation losses dominate efficiency. Its 150 V/ns dv/dt rating confirms immunity to spurious turn-on in high-noise bridge-leg configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - supports universal-input offline SMPS without derating in 265 VAC mains with surge margin. |
| RDS(on) | 0.150 Ω (typ. at ID = 10 A, VGS = 10 V) - enables ≤3 W conduction loss at 20 A RMS in PFC boost stage. |
| tf | 23 ns (typ. at ID = 10 A, Rg = 10 Ω) - reduces switching loss and EMI in 65–100 kHz hard-switched topologies. |
| Qg | 27 nC - allows fast, low-loss gate driving with standard 1–2 A peak gate drivers. |
| θch-c | 3.7 °C/W - permits 33.7 W channel dissipation at Tc = 25°C, supporting compact heatsink designs. |
| trr | 400 ns (typ. at IF = 20 A, diF/dt = 100 A/μs) - minimizes diode recovery loss and voltage overshoot in CCM PFC. |
| dv/dt | 150 V/ns - prevents false triggering during high-slew-rate bridge node transitions. |
Pinout & Package
Package: TO-220FP (RENESAS code PRSS0003AG-A), insulated tab, vertical mounting, 1.9 g mass. Thermal pad electrically connected to Drain (Pin 2).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires 10 V drive for full enhancement; Rg = 2.5 Ω limits ringing and optimizes switching speed. |
| 2 (D) | Drain | High-side switch node; connected to heatsink via insulated tab; carries full load current and withstands 600 V transients. |
| 3 (S) | Source | Power return path and gate reference; low-inductance layout critical to minimize VGS noise during switching. |
Key Features
| Feature | Design Value |
|---|---|
| Superjunction architecture | Enables 600 V rating with RDS(on) 40% lower than conventional VDMOS at same die area. |
| Low Qgd/Qg ratio | Qgd = 8.5 nC / Qg = 27 nC → 31% - improves Miller immunity and hard-switching robustness. |
| Controlled body-diode recovery | Qrr = 5.6 μC with soft recovery waveform - reduces voltage spike and EMI in boost diode-replacement applications. |
| Avalanche-rated | EAR = 1.36 mJ (Tch ≤ 150°C) - supports unclamped inductive switching in flyback or LLC resonant controllers. |
| High dv/dt immunity | 150 V/ns at VDS ≤ 480 V - eliminates need for external gate resistors or negative turn-off bias in half-bridge legs. |
Applications
| Industrial AC-DC Power Supplies | Server & Telecom Rectification |
|---|---|
Use Scenario: 3 kW active PFC front-end operating in continuous conduction mode (CCM) with 100 kHz switching frequency. IC Role / Device Role / Timing Role: Main switching device in boost converter stage; handles 20 A peak inductor current and 600 V blocking. Use Value: Low RDS(on) and controlled Qrr reduce total losses by ≥8% vs. standard 600 V MOSFETs, improving system efficiency to >96%. |
Use Scenario: High-density 1U server PSU with dual-phase interleaved PFC and tight thermal constraints. IC Role / Device Role / Timing Role: Primary-side switch in each PFC phase; operated with synchronous rectification on secondary side. Use Value: 3.7 °C/W θch-c and TO-220FP insulation allow direct heatsink mounting without isolation pads, saving PCB area and thermal interface cost. |
| LED Streetlight Drivers | Appliance Motor Inverters |
Use Scenario: Outdoor LED driver with universal input (90–305 VAC), 150 W output, and IP67 enclosure limiting airflow. IC Role / Device Role / Timing Role: Switching element in flyback or quasi-resonant controller; subjected to lightning surge stress. Use Value: 600 V VDSS and 1.36 mJ avalanche energy enable single-stage design without overvoltage clamping, reducing BOM count. |
Use Scenario: Variable-speed inverter for 750 W BLDC compressor in HVAC systems, operating at 16 kHz PWM with field-oriented control. IC Role / Device Role / Timing Role: Upper-leg switch in three-phase inverter bridge; commutated with shoot-through protection. Use Value: 150 V/ns dv/dt rating prevents false turn-on during high dV/dt across lower switches, eliminating need for active Miller clamp circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW60N60DM6 | RDS(on) = 0.135 Ω (lower), Qg = 32 nC (higher), trr = 320 ns (faster), TO-247 package. | Higher peak current handling (60 A) but larger footprint and no insulated tab - requires isolation hardware. | Preferred when minimizing conduction loss dominates and board space allows TO-247; not drop-in due to different pinout and thermal interface. |
| IXTH60N60L2 | RDS(on) = 0.145 Ω, Qg = 24 nC (lower), trr = 450 ns (slower), TO-247 package with isolated tab option. | Lower gate drive requirement but higher diode recovery loss - less optimal for CCM PFC. | Best suited for ZVS/ZCS topologies where Qg sensitivity outweighs Qrr; requires mechanical redesign for TO-247 mounting. |
Compared with STW60N60DM6 and IXTH60N60L2, the RJK60S5DPP-E0#T2 offers balanced trade-offs: superior dv/dt immunity and integrated insulation in TO-220FP, making it ideal for space-constrained, cost-sensitive industrial power supplies where reliability under noisy conditions is critical.
Availability
RJK60S5DPP-E0#T2 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, LED streetlight drivers, and appliance motor inverters requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for RJK60S5DPP-E0#T2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.
The RJK60S5DPP-E0#T2 belongs to Renesas' high-voltage superjunction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and consumer equipment.
FAQ
What is the maximum continuous drain current rating for RJK60S5DPP-E0#T2 at case temperature of 100°C?
The RJK60S5DPP-E0#T2 has a maximum continuous drain current (ID) of 12.6 A at Tc = 100°C, as specified in the Absolute Maximum Ratings table. This rating is thermally limited by the channel temperature cap of 150°C and the channel-to-case thermal impedance of 3.7 °C/W. At Tc = 25°C, the rating rises to 20 A. Derating curves on page 3 of the datasheet confirm linear reduction between these points.
Does RJK60S5DPP-E0#T2 have an insulated package, and how does that affect heatsink mounting?
Yes, the RJK60S5DPP-E0#T2 uses the TO-220FP package (RENESAS code PRSS0003AG-A), which features an electrically insulated metal tab. The Drain (Pin 2) is internally connected to this tab, allowing direct mounting to a common heatsink without additional insulating hardware. This simplifies thermal design and reduces assembly cost compared to non-insulated TO-220 variants requiring mica pads or sil-pads.
What is the typical gate-to-source threshold voltage range for RJK60S5DPP-E0#T2, and how does it vary with temperature?
The RJK60S5DPP-E0#T2 has a gate-to-source cutoff voltage (VGS(off)) range of 3–5 V at Ta = 25°C, with typical value ~4 V. As shown on page 5 of the datasheet, VGS(off) decreases linearly with rising temperature - approximately 4.2 V at −25°C, 3.8 V at 25°C, and 3.3 V at 125°C - ensuring stable turn-on behavior across industrial temperature ranges when driven with ≥10 V gate voltage.
Can RJK60S5DPP-E0#T2 be used in avalanche mode, and what is its rated repetitive avalanche energy?
Yes, the RJK60S5DPP-E0#T2 is fully rated for repetitive avalanche operation with EAR = 1.36 mJ at Tch ≤ 150°C and STch = 25°C, per Note 2 in the Absolute Maximum Ratings. This enables safe unclamped inductive switching in topologies like flyback or resonant converters where voltage spikes exceed VDSS. Avalanche testing uses the circuit on page 6 with L, VDD, and Rg ≥ 100 Ω.
How does the body-diode forward voltage of RJK60S5DPP-E0#T2 compare to standard silicon diodes, and what is its impact in PFC applications?
The RJK60S5DPP-E0#T2 body-diode forward voltage is VDF = 0.96 V (typ.) at IF = 20 A and VGS = 0, significantly lower than standard 600 V FRDs (~1.7–2.2 V). In CCM PFC, this reduces conduction loss during dead-time commutation, directly improving efficiency - especially at light loads where diode conduction dominates. The soft recovery (trr = 400 ns, Qrr = 5.6 μC) further suppresses voltage overshoot and EMI.
RJK60S5DPP-E0#T2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 178mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 27 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 1600 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 33.7W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
RJK60S5DPP-E0#T2 FAQ
1.How can I place an order for RJK60S5DPP-E0#T2 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJK60S5DPP-E0#T2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJK60S5DPP-E0#T2 reliable?
The price and inventory of RJK60S5DPP-E0#T2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJK60S5DPP-E0#T2 is usually 5 days.
3.What payment methods are accepted for RJK60S5DPP-E0#T2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJK60S5DPP-E0#T2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJK60S5DPP-E0#T2?
RJK60S5DPP-E0#T2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJK60S5DPP-E0#T2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJK60S5DPP-E0#T2?
For technical support, including RJK60S5DPP-E0#T2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJK60S5DPP-E0#T2 requirements.
6.How does Aetrix verify that RJK60S5DPP-E0#T2 is sourced from the original manufacturer or authorized distributors?
All RJK60S5DPP-E0#T2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJK60S5DPP-E0#T2 meets industry standards.
7.What is the process for return or replacement of RJK60S5DPP-E0#T2?
All RJK60S5DPP-E0#T2 units undergo pre-shipment inspection (PSI). If there is an issue with RJK60S5DPP-E0#T2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJK60S5DPP-E0#T2 part is unused and in its original packaging.
Return procedure for RJK60S5DPP-E0#T2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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