Renesas 2SK1971-E

Overview

2SK1971-E from Renesas Electronics is a silicon N-channel power MOSFET in TO-3PL package, designed for high-speed switching applications with 500 V V_DSS, 35 A continuous drain current, and 0.19 Ω typical R_DS(on) at V_GS = 10 V. It integrates a robust body diode (V_DF = 1.1 V at 35 A) and supports DC-DC converters, motor control, and switching regulators.

For engineers reviewing the 2SK1971-E datasheet, 2SK1971-E pinout, 2SK1971-E application, or 2SK1971-E equivalent, key selection criteria include safe operating area (SOA) compliance at 500 V, thermal resistance (θ_ch–c = 0.625 °C/W), and fast switching performance (t_d(off) = 320 ns, t_r = 170 ns) under pulse test conditions.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for high-voltage, high-current switching. Its gate threshold voltage (V_GS(off) = 2.0–3.0 V) enables low-drive-current operation with standard logic-level gate drivers, while the absence of secondary breakdown ensures reliability under inductive load transients.

The device features a flanged TO-3PL metal package with isolated drain (Pin 2), enabling direct heatsinking and high-power dissipation (P_ch = 200 W at T_c = 25 °C). Its capacitance profile (C_iss = 4320 pF, C_oss = 1120 pF) supports stable high-frequency operation up to several hundred kHz in hard-switched topologies.

Key Specifications

Pinout & Package

2SK1971-E uses the TO-3PL (RENESAS code PRSS0004ZF-A) metal package with integral flange for mechanical mounting and thermal conduction. The case serves as the Drain terminal, electrically isolated from Source and Gate.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP35NF50 and IXTH30N50L, the 2SK1971-E offers superior thermal performance via its flanged TO-3PL package (θ_ch–c = 0.625 °C/W vs. ~1.0 °C/W for TO-247), enabling higher power density in space-constrained industrial converters without forced air cooling.

Availability

2SK1971-E is available at Aetrix Electronics and suitable for switching power supplies, DC motor drives, and industrial lighting ballasts requiring stable component supply and long-term manufacturability.

Supply support for 2SK1971-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and mixed-signal solutions for industrial, automotive, and infrastructure markets.

The 2SK1971-E belongs to Renesas' legacy high-voltage discrete MOSFET product line, engineered for rugged, high-efficiency power conversion in industrial-grade equipment where reliability under thermal and electrical stress is critical.

FAQ

What is the maximum continuous drain current rating for the 2SK1971-E?

The 2SK1971-E has a maximum continuous drain current (I_D) of 35 A at case temperature T_c = 25 °C. This rating assumes proper heatsinking to maintain the channel temperature below 150 °C. At elevated case temperatures, the current must be derated per the power vs. temperature curve on page 3 of the datasheet, with zero current allowed above 150 °C. The 2SK1971-E also supports 140 A peak drain current for pulses ≤10 µs at 1% duty cycle.

Does the 2SK1971-E have an integrated body diode, and what are its key parameters?

Yes, the 2SK1971-E includes an integrated body diode between source and drain. Its forward voltage (V_DF) is 1.1 V at 35 A and V_GS = 0 V, and its reverse recovery time (t_rr) is 530 ns under test conditions of I_F = 35 A, di_F/dt = 100 A/µs, and V_GS = 0 V. These values make the 2SK1971-E suitable for freewheeling and non-synchronous rectification in power converters without requiring external diodes.

What is the gate-to-source voltage limit for the 2SK1971-E, and why is it important?

The 2SK1971-E specifies a gate-to-source voltage limit (V_GSS) of ±30 V. Exceeding this rating risks permanent gate oxide damage, leading to increased gate leakage or device failure. This limit applies regardless of drain voltage or operating mode. In practice, gate drive circuits should clamp V_GS to ≤±20 V for safety margin, especially in noisy environments or during transient events. The 2SK1971-E's V_GS(off) range of 2.0–3.0 V ensures compatibility with standard 5 V or 10 V logic-level drivers.

How does the TO-3PL package of the 2SK1971-E impact thermal design?

The TO-3PL package of the 2SK1971-E features a metal flange that serves as the drain terminal and provides direct thermal conduction to the heatsink. With a channel-to-case thermal resistance (θ_ch–c) of 0.625 °C/W, the 2SK1971-E can dissipate up to 200 W at T_c = 25 °C. This low thermal resistance allows compact thermal solutions-unlike plastic packages-and eliminates the need for insulating pads when the heatsink is at drain potential. Proper mounting torque and thermal interface material are essential to maintain this performance in the 2SK1971-E.

Can the 2SK1971-E be used in avalanche-rated applications?

The 2SK1971-E datasheet does not specify avalanche energy rating (EAS) or guaranteed avalanche capability. While the device exhibits "no secondary breakdown" behavior, this refers to safe operating area stability-not controlled avalanche operation. Renesas does not characterize or guarantee the 2SK1971-E for repetitive or single-pulse avalanche conditions. For designs requiring avalanche ruggedness (e.g., inductive load switching without snubbers), a device explicitly rated for EAS-such as the IXTH30N50L-should be selected instead of the 2SK1971-E.