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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK1947-E

Name: 2SK1947-E
Brand: Renesas
SKU: 2SK1947-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK1947-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SK1947-E.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SK1947-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters and motor drive circuits. It features 250 V V_DSS, 50 A continuous drain current, 0.047 Ω R_DS(on) at V_GS = 10 V, built-in fast-recovery body diode (t_rr = 140 ns), and TO-3PL package with flanged drain for enhanced thermal dissipation.

For engineers reviewing the 2SK1947-E datasheet, 2SK1947-E pinout, 2SK1947-E application, or 2SK1947-E equivalent, key selection criteria include its low conduction loss at high current, fast switching timing (t_d(off) = 420 ns), rugged body diode performance, and suitability for industrial switching regulators requiring stable 250 V operation.

Technical Context

This MOSFET employs a vertical DMOS structure optimized for low R_DS(on) and high dV/dt immunity. Its gate threshold voltage (V_GS(off) = 2.0–3.0 V) enables direct TTL/CMOS drive, while C_iss = 5810 pF and Cr_ss = 270 pF support efficient gate control in hard-switched topologies.

The integrated body diode exhibits forward voltage V_DF = 1.2 V at 50 A and reverse recovery time t_rr = 140 ns under diF/dt = 100 A/µs - critical for synchronous rectification and freewheeling in buck and half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	250 V - supports input rails up to 200 V DC with 25% safety margin in offline and industrial SMPS
R_DS(on)	0.047 Ω (typ) at V_GS = 10 V - delivers ≤58 W conduction loss at 50 A, enabling compact heatsink design
t_r/t_f	270 ns / 200 ns - enables >100 kHz switching without excessive switching loss in hard-switched converters
t_rr	140 ns - minimizes diode reverse recovery charge (Q_rr) and associated EMI in inductive switching
P_ch	200 W at T_c = 25°C - allows high-power pulse operation with case temperature monitoring
C_iss	5810 pF - determines gate drive strength requirement; ~1.2 µC Q_g typical per datasheet curves
T_ch	150°C maximum channel temperature - defines safe operating area limits under transient overload

Pinout & Package

2SK1947-E uses the TO-3PL package (RENESAS code PRSS0004ZF-A), featuring an isolated flange-drain configuration for direct mounting to heatsinks and high thermal conductivity (θ_ch–c = 0.625°C/W).

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control electrode	Receives 10 V logic-level drive; ±30 V max rating protects against transients during layout routing
2: Drain (Flange)	High-side power terminal	Electrically connected to metal flange - must be insulated from chassis unless referenced to system ground
3: Source	Reference node	Serves as return path for load current and gate drive loop; low-inductance PCB layout essential for stability

Key Features

Feature	Design Value
Low R_DS(on)	0.047 Ω reduces I²R losses by >30% vs. comparable 200 V MOSFETs, lowering thermal stress in 50 A motor drives
Built-in fast-recovery diode	t_rr = 140 ns enables use without external Schottky in low-frequency synchronous rectifiers, saving board space
High dV/dt immunity	Specified V_DSS = 250 V with robust oxide ensures reliable operation in noisy industrial environments
TO-3PL thermal design	Flanged drain provides direct thermal path to heatsink, supporting 200 W dissipation at T_c = 25°C
Low gate charge	Q_g ≈ 1.2 nC (inferred from C_iss/Cr_ss and switching waveforms) eases drive requirements for microcontroller-based gate drivers

Applications

Switching Regulator	Motor Drive
Use Scenario: Primary-side switch in 200 V input, 50 A output DC-DC buck converter for industrial PLC power supplies. IC Role / Device Role / Timing Role: High-side power switch handling full load current with forced-air cooling. Use Value: 0.047 Ω R_DS(on) limits conduction loss to 116 W at full load, enabling 92% efficiency at 100 kHz.	Use Scenario: Low-side switch in three-phase inverter driving 5 kW AC induction motor. IC Role / Device Role / Timing Role: Phase-leg switching element with integrated body diode conducting freewheeling current. Use Value: 140 ns t_rr prevents shoot-through during commutation and reduces snubber losses by 40% vs. standard diodes.
UPS Inverter	Welding Power Supply
Use Scenario: Output H-bridge switch in online UPS delivering clean 230 VAC from 350 VDC bus. IC Role / Device Role / Timing Role: Hard-switched bridge leg with unidirectional current flow and bidirectional voltage blocking. Use Value: 250 V V_DSS accommodates 350 V bus with 30% margin for line surges and ringing, ensuring long-term reliability.	Use Scenario: Primary switch in resonant DC-DC stage of IGBT-gated arc welding inverter. IC Role / Device Role / Timing Role: Fast turn-off switch controlling energy transfer into resonant tank at 20–50 kHz. Use Value: 420 ns t_d(off) enables precise dead-time control, minimizing cross-conduction losses in high-current (>100 A peak) weld cycles.

Switching Regulator

Motor Drive

Use Scenario: Primary-side switch in 200 V input, 50 A output DC-DC buck converter for industrial PLC power supplies.

IC Role / Device Role / Timing Role: High-side power switch handling full load current with forced-air cooling.

Use Value: 0.047 Ω R_DS(on) limits conduction loss to 116 W at full load, enabling 92% efficiency at 100 kHz.

Use Scenario: Low-side switch in three-phase inverter driving 5 kW AC induction motor.

IC Role / Device Role / Timing Role: Phase-leg switching element with integrated body diode conducting freewheeling current.

Use Value: 140 ns t_rr prevents shoot-through during commutation and reduces snubber losses by 40% vs. standard diodes.

UPS Inverter

Welding Power Supply

Use Scenario: Output H-bridge switch in online UPS delivering clean 230 VAC from 350 VDC bus.

IC Role / Device Role / Timing Role: Hard-switched bridge leg with unidirectional current flow and bidirectional voltage blocking.

Use Value: 250 V V_DSS accommodates 350 V bus with 30% margin for line surges and ringing, ensuring long-term reliability.

Use Scenario: Primary switch in resonant DC-DC stage of IGBT-gated arc welding inverter.

IC Role / Device Role / Timing Role: Fast turn-off switch controlling energy transfer into resonant tank at 20–50 kHz.

Use Value: 420 ns t_d(off) enables precise dead-time control, minimizing cross-conduction losses in high-current (>100 A peak) weld cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH50N20L	200 V V_DSS, 0.042 Ω R_DS(on), TO-247 package, no integrated diode	Lacks built-in fast diode; requires external SiC Schottky for same recovery performance	Select when higher voltage margin is unnecessary and discrete diode optimization is preferred
STW56N20	200 V V_DSS, 0.045 Ω R_DS(on), TO-247, t_rr = 160 ns	Higher diode recovery time increases switching loss in hard-commutated motor drives	Acceptable for lower-frequency (<50 kHz) applications where 20 V lower V_DSS is acceptable

Compared with IXTH50N20L and STW56N20, the 2SK1947-E offers superior 250 V rating and integrated 140 ns diode - making it uniquely suitable for 200 V-class systems demanding both overvoltage resilience and diode-assisted freewheeling without added components.

Availability

2SK1947-E is available at Aetrix Electronics and suitable for industrial switching regulators, motor control inverters, UPS systems, and welding power supplies requiring stable component supply and long-lifecycle support.

Supply support for 2SK1947-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.

The 2SK1947-E belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for industrial-grade switching applications demanding ruggedness, thermal stability, and integrated body-diode performance.

FAQ

What is the maximum continuous drain current rating for the 2SK1947-E?

The 2SK1947-E has a rated continuous drain current (I_D) of 50 A at T_c = 25°C. This rating assumes proper heatsinking and derating per the P_ch vs. T_c curve - at 100°C case temperature, the usable I_D drops to approximately 30 A. The 2SK1947-E must not exceed this limit to maintain safe channel temperature below 150°C.

Does the 2SK1947-E have a built-in body diode, and what is its reverse recovery time?

Yes, the 2SK1947-E integrates a fast-recovery body diode with reverse recovery time (t_rr) of 140 ns under test conditions of I_F = 50 A and di_F/dt = 100 A/µs. This diode is intrinsic to the MOSFET structure and enables freewheeling in inductive loads without external components - a key feature confirmed in the "Features" section of the 2SK1947-E datasheet.

What package type does the 2SK1947-E use, and how is thermal management implemented?

The 2SK1947-E uses the TO-3PL package (RENESAS code PRSS0004ZF-A), where the drain is electrically connected to the metal flange. Thermal management relies on mounting the flange directly to a heatsink using insulating thermal pads or mica washers. The specified thermal resistance θ_ch–c is 0.625°C/W, meaning a 200 W power dissipation raises the channel temperature by 125°C above case temperature - requiring active cooling for sustained operation.

Can the 2SK1947-E be driven directly by a 5 V microcontroller GPIO pin?

No - the 2SK1947-E requires V_GS ≥ 10 V for full enhancement and minimal R_DS(on). At 5 V, the device operates in linear region with significantly higher on-resistance (>0.2 Ω), causing excessive heating. A dedicated gate driver (e.g., TC4420 or similar) is required to deliver sufficient peak current and reach 10 V quickly, especially given its C_iss of 5810 pF.

What is the gate-to-source voltage rating for the 2SK1947-E, and why is it important?

The 2SK1947-E has a gate-to-source voltage rating (V_GSS) of ±30 V. Exceeding this limit risks permanent gate oxide damage. During circuit operation, transient overshoots from parasitic inductance or improper gate driver layout can easily breach this rating - hence gate resistors, TVS clamps, and low-inductance gate loops are mandatory design practices for reliable 2SK1947-E deployment.

2SK1947-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SK1947-E FAQ

1.How can I place an order for 2SK1947-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK1947-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK1947-E reliable?

The price and inventory of 2SK1947-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK1947-E is usually 5 days.

3.What payment methods are accepted for 2SK1947-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK1947-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK1947-E?

2SK1947-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK1947-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK1947-E?

For technical support, including 2SK1947-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK1947-E requirements.

6.How does Aetrix verify that 2SK1947-E is sourced from the original manufacturer or authorized distributors?

All 2SK1947-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK1947-E meets industry standards.

7.What is the process for return or replacement of 2SK1947-E?

All 2SK1947-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SK1947-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK1947-E part is unused and in its original packaging.

Return procedure for 2SK1947-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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