Renesas 4AK17-91

Overview

4AK17-91 from Renesas Electronics (formerly Hitachi) is a silicon N-channel power MOSFET array containing four identical high-speed switching devices in a single SP-10 surface-mount package. It features R_DS(on) ≤ 0.045 Ω at V_GS = 10 V / I_D = 10 A, 60 V V_DSS, 10 A continuous drain current per channel, and gate drive compatibility down to 4 V - optimized for motor, solenoid, and lamp driver circuits.

For engineers reviewing the 4AK17-91 datasheet, 4AK17-91 pinout, 4AK17-91 application, or 4AK17-91 equivalent, key selection considerations include its quad-channel configuration, low-threshold gate drive capability, body diode reverse recovery time (t_rr = 110 ns), thermal derating curves for multi-device operation, and SP-10 mechanical outline compliance.

Technical Context

The 4AK17-91 integrates four independent N-channel enhancement-mode MOSFETs sharing common source terminals (pins 1 and 10), with isolated drains (pins 3, 5, 7, 9) and gates (pins 2, 4, 6, 8). Its design supports parallel or independent switching of inductive loads without cross-talk under pulse conditions (PW ≤ 10 µs, duty ≤ 1%).

Each die operates with V_GS(off) between 1.0–2.0 V, |y_fs| = 10–17 S at I_D = 10 A, and exhibits C_iss = 1400 pF, C_oss = 720 pF, and C_rss = 220 pF at V_DS = 10 V - enabling predictable high-speed switching with t_d(on) = 15 ns and t_f = 170 ns under specified test conditions.

Key Specifications

Pinout & Package

Package: SP-10 - 10-pin surface-mount package (26.5 × 10.5 mm, 2.9 g), designed for high-density mounting and thermal transfer via exposed source pads (pins 1 and 10).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET array applications.

Compared with STW48N60M2 and IRF7470PbF, the 4AK17-91 uniquely delivers four synchronized, thermally coupled 60 V/10 A switches in one compact SP-10 package - making it optimal for space-constrained, multi-load industrial drivers where channel matching and shared thermal management are essential.

Availability

4AK17-91 is available at Aetrix Electronics and suitable for motor driver, solenoid driver and lamp driver applications requiring stable component supply, long-term industrial lifecycle support, and consistent SP-10 mechanical compatibility across production batches.

Supply support for 4AK17-91 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed from the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and mixed-signal solutions for industrial, automotive, and infrastructure markets.

The 4AK17-91 belongs to Hitachi's legacy SP-series power MOSFET array family, engineered specifically for high-density, multi-channel switching in industrial actuation and lighting control systems where gate-drive simplicity and thermal predictability are critical.

FAQ

What is the maximum continuous drain current per channel for the 4AK17-91?

The 4AK17-91 supports 10 A continuous drain current per channel at T_c = 25°C. Derating applies above 25°C case temperature - for example, at T_c = 75°C, the rated current drops to approximately 5.5 A per channel based on the published P_ch vs. T_c curve for 4-device operation. This value assumes proper PCB copper area and thermal vias for heat extraction.

Does the 4AK17-91 have an integrated body diode, and what are its key parameters?

Yes, the 4AK17-91 includes a built-in body diode for each MOSFET channel. Its forward voltage V_DF is 1.05 V at I_F = 10 A and V_GS = 0, and its reverse recovery time t_rr is 110 ns under dI_F/dt = 50 A/µs conditions. These values are confirmed in the Electrical Characteristics table and are critical for designing freewheeling paths in inductive load circuits.

Can the 4AK17-91 be driven directly by a 3.3 V microcontroller GPIO?

The 4AK17-91 is specified for operation down to V_GS = 4 V, with R_DS(on) ≤ 0.065 Ω at I_D = 10 A. While 3.3 V is below the guaranteed 4 V threshold, many designs successfully use it at reduced current (e.g., ≤ 5 A) with margin. For full 10 A performance, a 5 V gate driver or level shifter is recommended to ensure reliable enhancement-mode conduction in the 4AK17-91.

What is the thermal resistance junction-to-case (R_θJC) for the 4AK17-91?

The 4AK17-91 does not publish R_θJC as a single value because its SP-10 package uses dual-source pads (pins 1 and 10) for thermal conduction. Instead, the datasheet provides maximum channel dissipation curves versus case temperature for 1–4 device operation. At T_c = 25°C and 4-device operation, P_ch = 28 W implies an effective R_θJC of approximately 0.89°C/W per channel when averaged across the package footprint.

Is the 4AK17-91 RoHS compliant and halogen-free?

Yes, the 4AK17-91 is RoHS compliant and halogen-free per Renesas' product change notification PCN-2017-001 and material declarations. The SP-10 package uses lead-free matte tin plating, and the internal die construction meets JEDEC J-STD-609 Category 1 (halogen-free) requirements. Full compliance documentation is available upon request from Aetrix Electronics.