Renesas H5N2513PL-E

Overview

H5N2513PL-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in industrial DC-DC converters and motor drives, featuring 250 V V_DSS, 100 A continuous drain current, and 0.020 Ω typical R_DS(on) at V_GS = 10 V, with integrated fast-recovery body diode for reduced snubber complexity in hard-switched topologies.

For engineers reviewing the H5N2513PL-E datasheet, H5N2513PL-E pinout, H5N2513PL-E application, or H5N2513PL-E equivalent, this page delivers verified electrical parameters, TO-3PL package mechanical data, gate charge metrics (Q_g = 330 nC), switching timing (t_d(off) = 550 ns), and validated alternatives for high-current 200–250 V switching stages.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for low conduction loss and controlled switching behavior under high di/dt conditions. Its 0.5 °C/W channel-to-case thermal impedance and 250 W channel dissipation rating enable direct mounting to heatsinks without isolation pads in high-power industrial inverters.

The built-in body diode exhibits 1.2 V typical forward voltage at 100 A and 210 ns reverse recovery time, supporting synchronous rectification replacement in flyback and forward converters while maintaining safe commutation margins at 100 A/µs di_F/dt.

Key Specifications

Pinout & Package

Package: TO-3PL (RENESAS code PRSS0004ZF-A), metal-flanged isolated case with 26.0 mm × 20.0 mm footprint, 9.9 g mass, and flange-mounted drain terminal for low-inductance thermal and electrical connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Compared with IXTH100N25L2 and STW100N20V, the H5N2513PL-E uniquely combines 250 V rating, integrated 210 ns diode, and TO-3PL flange-mount thermal performance-making it optimal for space-constrained, high-reliability industrial inverters where board-level diode integration and thermal path integrity are critical.

Availability

H5N2513PL-E is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and DC fast charging modules requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for H5N2513PL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC products for automotive, industrial, and IoT applications with emphasis on functional safety and reliability.

The H5N2513PL-E belongs to Renesas' high-power discrete MOSFET product line, engineered specifically for ruggedized industrial switching applications demanding high current, high voltage, and robust thermal performance in harsh environments.

FAQ

What is the maximum continuous drain current rating for the H5N2513PL-E?

The H5N2513PL-E has a rated continuous drain current (I_D) of 100 A at T_c = 25°C. This rating assumes proper heatsinking to maintain channel temperature ≤150°C. At elevated case temperatures, derating is required per the datasheet's thermal curves; for example, at T_c = 100°C, the usable I_D drops to approximately 65 A. The H5N2513PL-E must be mounted on a heatsink with thermal resistance ≤0.5 °C/W to sustain full 100 A operation.

Does the H5N2513PL-E include an integrated body diode, and what are its key parameters?

Yes, the H5N2513PL-E integrates a fast-recovery body diode with 1.2 V typical forward voltage (V_DF) at 100 A and 210 ns reverse recovery time (t_rr) at di_F/dt = 100 A/µs. This diode is rated for 100 A continuous reverse current (I_DR) and supports hard commutation in bridge configurations. The H5N2513PL-E's diode performance eliminates need for external anti-parallel diodes in many inverter designs, reducing component count and PCB area.

What is the gate threshold voltage range for the H5N2513PL-E, and how does it affect drive requirements?

The H5N2513PL-E has a gate-to-source cutoff voltage (V_GS(off)) range of 2.0 V to 4.0 V, confirming enhancement-mode operation. For reliable full enhancement, a minimum V_GS of 10 V is specified, yielding 0.020 Ω typical R_DS(on). The H5N2513PL-E is not a logic-level device; gate drivers must supply ≥10 V with ≥2 A peak current to manage its 330 nC total gate charge within required switching times.

Can the H5N2513PL-E be used in avalanche-rated applications, and what is its single-pulse energy rating?

Yes, the H5N2513PL-E is characterized for unclamped inductive switching with a single-pulse avalanche energy (E_AR) of 625 mJ at T_ch = 25°C. This rating applies under specified test conditions (I_AP = 100 A, V_DD = 200 V). The H5N2513PL-E's avalanche capability supports fault-tolerant design in UPS and motor drive outputs where transient overcurrents may occur without external clamping.

What is the thermal resistance from channel to case (θ_ch-c) for the H5N2513PL-E, and how does it impact heatsink selection?

The H5N2513PL-E has a channel-to-case thermal resistance (θ_ch-c) of 0.5 °C/W, measured with the flange directly attached to the heatsink. This value assumes optimal mounting with thermal interface material and uniform pressure. To maintain T_ch ≤150°C at 250 W dissipation, the combined heatsink-to-ambient thermal resistance must be ≤0.5 °C/W. The H5N2513PL-E's low θ_ch-c enables compact heatsink designs in space-constrained industrial enclosures.