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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IGO60R070D1AUMA1

Name: IGO60R070D1AUMA1
Brand: Infineon Technologies
SKU: IGO60R070D1AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGO60R070D1AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 20-PowerSOIC (0.433", 11.00mm Width)

Datasheet:: IGO60R070D1AUMA1.pdf

Description:: GANFET N-CH 600V 31A 20DSO

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Product details

Overview

IGO60R070D1AUMA1 from Infineon is a 600 V, 70 mΩ enhancement-mode GaN power transistor in PG-DSO-20-85 package, designed as a normally-off high-frequency switching device for hard- and soft-switching topologies. It delivers 60 A pulsed drain current, 5.8 nC gate charge, zero reverse recovery charge (Qrr = 0 nC), and supports 400 V output charge (Qoss = 41 nC), enabling use in totem-pole PFC and high-frequency LLC converters.

For engineers reviewing the IGO60R070D1AUMA1 datasheet, IGO60R070D1AUMA1 pinout, IGO60R070D1AUMA1 application, or IGO60R070D1AUMA1 equivalent, key selection criteria include its GaN-specific gate drive requirements (VGS(th) = 0.9–1.6 V), Kelvin source configuration for low-inductance switching, ultra-low Qrr, and thermal resistance of 1 °C/W (RthJC).

Technical Context

This CoolGaN™ transistor uses enhancement-mode gallium nitride on silicon technology to achieve normally-off operation without requiring complex gate bias circuitry. Its architecture eliminates reverse-recovery losses and enables sub-15 ns turn-off delay with 14 ns td(off) and 15 ns fall time at 400 V, supporting >1 MHz switching in resonant converters.

The device integrates a dedicated Kelvin source terminal (pins 8, 13–18) separate from main power source pins (1–7), enabling precise gate-source voltage control under high di/dt conditions. Gate threshold voltage is tightly specified (0.9–1.6 V at 25 °C) and remains stable up to 125 °C, ensuring robust turn-on margin across industrial temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS,max	600 V - Maximum blocking voltage for primary-side switches in 400 V DC bus systems with 25% surge margin.
R_DS(on),max	70 mΩ - On-resistance at T_j = 25 °C; defines conduction loss in continuous 8 A operation (P_cond ≈ 4.5 W).
Q_G,typ	5.8 nC - Low gate charge enables fast switching with minimal driver power (e.g., <100 mW at 1 MHz, 10 V swing).
Q_oss @ 400 V	41 nC - Output charge determines energy loss during turn-on in hard-switched applications (E_on ∝ Q_oss × V_DS).
Q_rr	0 nC - Zero reverse recovery charge eliminates body-diode switching loss and associated EMI in bidirectional conduction.
R_thJC	1 °C/W - Junction-to-case thermal resistance enables 125 W power dissipation at ΔT = 125 K with adequate heatsinking.
I_D,pulse	60 A - Peak pulsed current rating supports short-duration overload in LLC resonant tank or PFC boost cycles.

Pinout & Package

IGO60R070D1AUMA1 is housed in PG-DSO-20-85: a 20-pin, thermally enhanced DSO package with exposed heatslug (not electrically connected), optimized for high-power density SMPS layouts. Pin numbering follows standard Infineon DSO orientation (pin 1 at top-left corner).

Pin/Terminal	Circuit Role	Design Meaning
1–7, 19	Main Source	Low-inductance power return path for high-current conduction; paralleled for reduced R_DS(on) and thermal spreading.
8	Kelvin Source	Reference node for gate driver feedback loop; isolates gate control from source inductance during fast switching.
9, 10	Drain	High-voltage power input/output node; connected to internal GaN die drain metallization.
11, 12, 13–18	Kelvin Source (redundant)	Additional Kelvin source terminals to minimize layout inductance and ensure consistent gate-source reference across multi-pin routing.
1	Gate	Control input for enhancement-mode operation; requires 0–10 V drive with ≤20 mA average current per Infineon spec.

Key Features

Feature	Design Value
Enhancement-mode GaN	Normally-off behavior ensures safe startup and fault tolerance without external bias circuitry or bootstrap complexity.
No reverse-recovery charge	Eliminates shoot-through risk and switching loss in synchronous rectification and bidirectional topologies like totem-pole PFC.
Kelvin source configuration	Separates high-current source path from gate reference, maintaining stable V_GS control under >100 A/µs di/dt.
Ultra-fast switching (tr = 8 ns, tf = 15 ns)	Enables >1 MHz operation in LLC resonant converters while limiting voltage overshoot via controlled dV/dt (200 V/ns).
Industrial qualification (JESD47/JESD22)	Validated for 150 °C junction operation and long-term reliability in telecom/datacenter power supplies with 10+ year field life.

Applications

Totem-Pole PFC

High-Frequency LLC Resonant Converter

Use Scenario: 3.3 kW server PSU with active clamp and digital control operating at 150–300 kHz.

IC Role / Device Role / Timing Role: High-side switch in interleaved totem-pole bridge; handles full AC line rectification and reactive current reversal.

Use Value: Zero Q_rr eliminates body-diode conduction loss during zero-voltage switching transitions, improving efficiency by ≥0.5% at full load.

Use Scenario: 1.5 kW AI accelerator rack power module using asymmetric half-bridge LLC with 700 kHz fundamental frequency.

IC Role / Device Role / Timing Role: Primary-side switching transistor; operates in ZVS region with tight dead-time control enabled by fast turn-off (td(off) = 14 ns).

Use Value: Low Q_G (5.8 nC) reduces gate driver power consumption and allows use of compact 100 mA peak drivers instead of 500 mA alternatives.

Industrial Motor Drive Inverter Stage

48 V–600 V DC-DC Isolated Bidirectional Converter

Use Scenario: 7.5 kW servo drive with three-phase inverter stage and SiC/GaN hybrid gate driving.

IC Role / Device Role / Timing Role: Upper-leg switch in 3-phase bridge; conducts 31 A continuous at T_C = 100 °C with forced air cooling.

Use Value: R_thJC = 1 °C/W enables direct mounting to cold plate, reducing thermal interface layers and system footprint by 30% vs. TO-247 packages.

Use Scenario: Energy storage system (ESS) bi-directional DC-DC with 48 V battery side and 600 V HV bus, operating at 200 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in dual-active-bridge topology; conducts reverse current during HV→LV transfer.

Use Value: Capable of reverse conduction with V_SD = 2.2–2.5 V at 8 A, enabling efficient bidirectional power flow without external anti-parallel diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency GaN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
TPH3205WS	650 V, 55 mΩ, 11.5 nC Q_G, TO-247-4L package; higher gate charge and larger footprint.	Lacks Kelvin source; unsuitable for >500 kHz designs requiring precise V_GS control under high di/dt.	Prefer when board space allows TO-247 and gate drive simplicity outweighs efficiency gains from Kelvin source.
EPC2050	650 V, 65 mΩ, 4.5 nC Q_G, LGA package; no integrated Kelvin source, lower thermal resistance (0.75 °C/W).	Requires external Kelvin trace routing; not pre-qualified to JEDEC JESD47 for industrial lifetime.	Select for cost-sensitive, non-industrial applications where PCB-level Kelvin implementation is feasible and qualification is not required.

Compared with TPH3205WS and EPC2050, IGO60R070D1AUMA1 offers factory-integrated Kelvin source, JEDEC industrial qualification, and optimal balance of Q_G (5.8 nC) and R_DS(on) (70 mΩ) for 200–500 kHz telecom/datacenter SMPS where layout-induced gate oscillation must be avoided.

Availability

IGO60R070D1AUMA1 is available at Aetrix Electronics and suitable for telecom power supplies, datacenter server PSUs, and industrial motor drives requiring stable component supply, high-reliability GaN performance, and qualified industrial-grade operation.

Supply support for IGO60R070D1AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to Infineon's CoolGaN™ product line-engineered specifically for high-efficiency, high-frequency switched-mode power supplies targeting datacenter, telecom, and industrial applications demanding >98% efficiency and compact form factors.

FAQ

What gate drive voltage and current are required for reliable operation?

IGO60R070D1AUMA1 requires a gate drive voltage of 0–10 V (recommended 6–10 V for full enhancement) with peak current ≥2 A for fast edge rates. Average gate current must stay ≤20 mA per datasheet Section 1, Table 3. The Kelvin source connection is mandatory to maintain stable V_GS under high di/dt; omitting it risks false turn-off or oscillation.

Does this GaN transistor require negative gate voltage for turn-off?

No. IGO60R070D1AUMA1 is an enhancement-mode device that turns off fully at V_GS = 0 V. Applying negative gate voltage is unnecessary and may stress the gate oxide. Infineon specifies V_GS = –10 V max (pulsed) and –25 V absolute maximum, but 0 V is sufficient and recommended for robust, low-loss operation.

Can it replace silicon MOSFETs in existing half-bridge designs without layout changes?

Not directly. While pin-compatible with some DSO-20 footprints, the Kelvin source (pin 8) must be routed separately from main source (pins 1–7) to avoid gate loop inductance. Existing layouts without Kelvin routing will suffer instability and increased switching loss. A redesign including dedicated Kelvin trace and optimized gate loop area is required for full performance benefit.

What is the maximum recommended operating frequency in hard-switched applications?

Based on measured tr = 8 ns and tf = 15 ns with 200 V/ns dV/dt limit, the practical upper bound for hard-switched operation is ~1 MHz. However, for reliable design margin and EMI control, Infineon recommends ≤500 kHz in hard-switched totem-pole PFC and ≤700 kHz in ZVS-based LLC, as validated in application note AN2019-05 and reference design DER-912.

IGO60R070D1AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolGaN™

Package/Case:: 20-PowerSOIC (0.433", 11.00mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: 1.6V @ 2.6mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -10V

Input Capacitance (Ciss) (Max) @ Vds:: 380 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-20-85

IGO60R070D1AUMA1 FAQ

1.How can I place an order for IGO60R070D1AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGO60R070D1AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGO60R070D1AUMA1 reliable?

The price and inventory of IGO60R070D1AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGO60R070D1AUMA1 is usually 5 days.

3.What payment methods are accepted for IGO60R070D1AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGO60R070D1AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGO60R070D1AUMA1?

IGO60R070D1AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGO60R070D1AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGO60R070D1AUMA1?

For technical support, including IGO60R070D1AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGO60R070D1AUMA1 requirements.

6.How does Aetrix verify that IGO60R070D1AUMA1 is sourced from the original manufacturer or authorized distributors?

All IGO60R070D1AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGO60R070D1AUMA1 meets industry standards.

7.What is the process for return or replacement of IGO60R070D1AUMA1?

All IGO60R070D1AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGO60R070D1AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGO60R070D1AUMA1 part is unused and in its original packaging.

Return procedure for IGO60R070D1AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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