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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TK15A50D(STA4,Q,M) MOSFET N-CH 500V 15A TO220SIS Toshiba Semiconductor and Storage	81	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	15A (Ta)	10V	300mOhm @ 7.5A, 10V	4V @ 1mA	40 nC @ 10 V	±30V	2300 pF @ 25 V	-	50W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
NTB7D3N15MC NTB7D3N15MC onsemi	41	RFQ	Datasheet	PowerTrench®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150 V	15.2A (Ta), 101A (Tc)	8V, 10V	7.3mOhm @ 62A, 10V	4.5V @ 342µA	53 nC @ 10 V	±20V	4250 pF @ 75 V	-	3.75W (Ta), 166W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
TK100E08N1,S1X MOSFET N-CH 80V 100A TO220 Toshiba Semiconductor and Storage	96	RFQ	Datasheet	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	100A (Ta)	10V	3.2mOhm @ 50A, 10V	4V @ 1mA	130 nC @ 10 V	±20V	9000 pF @ 40 V	-	255W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
IRFP140PBF MOSFET N-CH 100V 31A TO247-3 Vishay Siliconix	77	RFQ	-	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	31A (Tc)	10V	77mOhm @ 19A, 10V	4V @ 250µA	72 nC @ 10 V	±20V	1700 pF @ 25 V	-	180W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC
FDP047N10 MOSFET N-CH 100V 120A TO220-3 onsemi	87	RFQ	Datasheet	PowerTrench®	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	120A (Tc)	10V	4.7mOhm @ 75A, 10V	4.5V @ 250µA	210 nC @ 10 V	±20V	15265 pF @ 25 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3
IRFP264PBF MOSFET N-CH 250V 38A TO247-3 Vishay Siliconix	32	RFQ	-	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	38A (Tc)	10V	75mOhm @ 23A, 10V	4V @ 250µA	210 nC @ 10 V	±20V	5400 pF @ 25 V	-	280W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
IXTP36P15P MOSFET P-CH 150V 36A TO220AB Littelfuse Inc.	90	RFQ	Datasheet	Polar P3™	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	150 V	36A (Tc)	10V	110mOhm @ 18A, 10V	4.5V @ 250µA	55 nC @ 10 V	±20V	3100 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
IXTA3N120HV MOSFET N-CH 1200V 3A TO263 Littelfuse Inc.	85	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	3A (Tc)	10V	4.5Ohm @ 500mA, 10V	5V @ 250µA	42 nC @ 10 V	±20V	1100 pF @ 25 V	-	200W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263HV
STW26NM60N N-channel 600 V, 0.135 Ohm typ., STMicroelectronics	68	RFQ	Datasheet	MDmesh™ II	TO-247-3	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	165mOhm @ 10A, 10V	4V @ 250µA	60 nC @ 10 V	±30V	1800 pF @ 50 V	-	140W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247-3
GS61008T-MR GS61008T-MR Infineon Technologies Canada Inc.	96	RFQ	-	-	4-SMD, No Lead	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	90A (Tc)	6V	9.5mOhm @ 27A, 6V	1.3V @ 7mA	12 nC @ 6 V	+7V, -10V	590 pF @ 50 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	-
IXFH50N60P3 MOSFET N-CH 600V 50A TO247AD Littelfuse Inc.	66	RFQ	Datasheet	HiPerFET™, Polar3™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	50A (Tc)	10V	145mOhm @ 500mA, 10V	5V @ 4mA	94 nC @ 10 V	±30V	6300 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)
IXFH150N25X3 MOSFET N-CH 250V 150A TO247 Littelfuse Inc.	48	RFQ	Datasheet	HiPerFET™, Ultra X3	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	150A (Tc)	10V	9mOhm @ 75A, 10V	4.5V @ 4mA	154 nC @ 10 V	±20V	10400 pF @ 25 V	-	780W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
APT30M85BVRG MOSFET N-CH 300V 40A TO247 Microchip Technology	80	RFQ	Datasheet	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	40A (Tc)	10V	85mOhm @ 500mA, 10V	4V @ 1mA	195 nC @ 10 V	±30V	4950 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
TK040N65Z,S1F MOSFET N-CH 650V 57A TO247 Toshiba Semiconductor and Storage	76	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	57A (Ta)	10V	40mOhm @ 28.5A, 10V	4V @ 2.85mA	105 nC @ 10 V	±30V	6250 pF @ 300 V	-	360W (Tc)	150°C	-	-	Through Hole	TO-247
TW140N120C,S1F G3 1200V SIC-MOSFET TO-247 140M Toshiba Semiconductor and Storage	70	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	20A (Tc)	18V	182mOhm @ 10A, 18V	5V @ 1mA	24 nC @ 18 V	+25V, -10V	691 pF @ 800 V	-	107W (Tc)	175°C	-	-	Through Hole	TO-247
TK042N65Z5,S1F(S 650V DTMOS6 HSD 42MOHM TO-247 Toshiba Semiconductor and Storage	86	RFQ	Datasheet	DTMOSVI	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	55A (Ta)	10V	42mOhm @ 27.5A, 10V	4.5V @ 2.85mA	105 nC @ 10 V	±30V	6280 pF @ 300 V	-	360W (Tc)	150°C	-	-	Through Hole	TO-247
STW26NM50 MOSFET N-CH 500V 30A TO247-3 STMicroelectronics	57	RFQ	Datasheet	MDmesh™	TO-247-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	500 V	30A (Tc)	10V	120mOhm @ 13A, 10V	5V @ 250µA	106 nC @ 10 V	±30V	3000 pF @ 25 V	-	313W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247-3
APT1001RBVRG MOSFET N-CH 1000V 11A TO247 Microchip Technology	37	RFQ	Datasheet	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	11A (Tc)	-	1Ohm @ 500mA, 10V	4V @ 1mA	225 nC @ 10 V	-	3660 pF @ 25 V	-	-	-	-	-	Through Hole	TO-247 [B]
IXFT80N65X2HV MOSFET N-CH 650V 80A TO268HV Littelfuse Inc.	78	RFQ	Datasheet	HiPerFET™, Ultra X2	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	80A (Tc)	10V	-	5V @ 4mA	140 nC @ 10 V	±30V	8300 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268HV (IXFT)
APT6025BVRG MOSFET N-CH 600V 25A TO247 Microchip Technology	71	RFQ	Datasheet	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	25A (Tc)	-	250mOhm @ 500mA, 10V	4V @ 1mA	275 nC @ 10 V	-	5160 pF @ 25 V	-	-	-	-	-	Through Hole	TO-247 [B]

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